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1
Design of Zinc Oxide Tetrapod Devices
ZnO & ZrO
• The unique characteristics of ZnO nanomaterials
(wide band gap, piezoelectric effect) lends them
great potential for UV and pressure sensing
applications.
• Nanomaterials require precise structural and
electrical characterization which are complicated
by their size.
• In order to use ZnO nanostructures successfully
in macro-scale devices, we must develop
effective means to integrate nanostructures into
a working device.
Nanoparticle Applications: ZrO
• Zirconium Dioxide nanoparticles can
increase the tensile strength of materials
when applied as a coating.
• This has many possible applications in
wear coatings, ceramics, dies, cutting
edges, as well as piezoelectric
components, and dielectrics.
Synthesis of the Nanostructures
Used Vapor Phase Transport Method
Furnace
Valves
O2 Ar
Tube setup from left: GaN, Si, Boat with mixed 1:1 ratio of ZnO and graphite
Processing Condition D: Gold Coated Wafers
• Motivation: a uniform 10 nm gold-
coated Si wafer will induce better
nucleation sites for nanorod growth
than colloidal gold
• Used ZnO and C powder with Ar and
O2 gas
• Heated to 900 Celsius
• See rod-like structures, forming more
material than with gold colloid
processing conditions.
Figure A
Figure B
Trenches
B
A higher magnification of the Ag / ZOT interface. The arrow
indicates a ZOT arm clearly embedded in the contact metal..
Proof of Concept: Initial Device Testing
5.00E -09
reproducible
3.00E -09
C urrent (Am ps )
2.00E -09
1.00E -09 0
-2.00E -09
timeframe
Kapton Tape over Nanorods
• For our second device we decided to essentially bundle the
nanostructures with Kapton tape
• From our tests we concluded that there is an electrical
response with the application of pressure within the device
but integration of the Kapton tape into a microdevice would
be very difficult
8.00E-10
6.00E-10
4.00E-10
Current (Amps)
2.00E-10
Applied Force Test 1
0.00E+00 Applied Force Test 2
-6 -4 -2 0 2 4 6 No Force Applied
-2.00E-10
-4.00E-10
-6.00E-10
-8.00E-10
Voltage (V)
PVA Adhesive and ZOT
IV Curves for Glue Pressure Tests
• Neutral pH adhesive (polyvinyl
acetate based; PVA) was 3.00E-07
2.00E-07
• Integration Methods: 1.50E-07
Current (Amps)
No Pressure
5.00E-08 First Pressure Test
the powder in place 0.00E+00 Second Pressure Test
-2.00E-07
substrate. Voltage (V)
3.00E-05
2.00E-05
Increasing Pressure
1.00E-05
1kPa
3kPa
Amps
0.00E+00 4.5kPa
6kPa
-4.5 -3.5 -2.5 -1.5 -0.5 0.5 1.5 2.5 3.5 4.5
9kPa
-1.00E-05 15kPa
-2.00E-05
Increasing Pressure
-3.00E-05
Volts
2.40E+05
2.20E+05
2.00E+05 1kN
Resistance (ohms)
1.20E+05
1.00E+05
-4.5 -3.5 -2.5 -1.5 -0.5 0.5 1.5 2.5 3.5 4.5
Volts
Resistance varies with pressure between 1.5 and 3.5 V in both positive and negative
regions.
Future Work
• Better apparatus for applying quantifiable
pressure
• Worth quantitatively investigating capacitance as
a function of voltage
• Comparing electrical and piezoelectric response
of nanorods versus tetrapods
• Modeling pressure versus resistance from data
we obtain is necessary in order to:
– Make a predictable device
– Understand the nanomechanics of ZOT PVA
composite
Summary
• Synthesized nanorods and tetrapods using vapor
transport growth
• Used lithography to create two horizontal electrode
designs on silicon wafers
• Integrated tetrapods into macroscale devices with:
– Kapton Tape
– PDMS
– PVA Glue
• Observed I-V response to pressure and light stimuli in
devices
• Quantified pressure effects on resistance on a wafer
device