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ME203
Circuits and Electronic Devices
Lecture No: 25
Instructor
Dr. Abid Imran
------Faculty of Mechanical Engineering------ Fall Semester
1 2020
Content
• Base current
IC
Breakdown
region
C
B Active region
Saturation
region
A
VCE
0 0.7 V VCE(max)
Collector Characteristic Curves
IC
Breakdown
BJT Characteristics region
C
B Active region
In active region
Saturation
region
A
VCE
In saturation region 0 0.7 V VCE(max)
Simple rule:
If
In saturation mode
A BJT can be used as a switching device in logic circuits to turn on or off current to
a load. As a switch, the transistor is normally in either cutoff (load is OFF) or
saturation (load is ON).
BJT Switch
𝐼 𝐶 > 𝐼 𝐶 (𝑠𝑎𝑡)
𝛽 𝐼 𝐵 > 𝐼 𝐶 (𝑠𝑎𝑡)
4.96V
BJT as a voltage amplifier
• Amplification is the process of linearly increasing the amplitude of an
electrical signal.
• When a BJT is biased in the active (or linear) region, the BE junction
has a low resistance due to forward bias and the BC junction has a
high resistance due to reverse bias.
Voltage Amplification
• The base current in a transistor is very small compared to the collector
and emitter currents 𝐼 𝑒 ≅ 𝐼 𝑐
In Active region
• Since voltage gain is the ratio of the output voltage to the input voltage
Voltage Amplification: Example
Determine the voltage gain and the ac output voltage
in Figure if
Solution
• The voltage gain is
Active region
Dc load line:
0
• In cutoff region
𝑉
𝐶𝐸 =𝑉 𝐶𝐶
• In Saturation region.
0
𝑉 𝐶𝐶
𝐼 𝐶 (𝑎𝑠𝑡)=
𝑅𝐶
• Different operating point based on base current
• Load line can be changed by changing the or
• Find 𝐼 𝐶 =𝐼 𝐵 𝛽 𝐷𝐶
• Find
𝐼 𝐶 =20 𝑚𝐴
For
𝐼 𝐶 =30 𝑚𝐴
For
𝐼 𝐶 =40 𝑚𝐴
For
For
𝐼 𝐶 =20 𝑚𝐴
For
𝐼 𝐶 =30 𝑚𝐴
For
𝐼 𝐶 =40 𝑚𝐴
BOOK: Electronic Devices, electron flow version.
SECTIONS: 4-4, 4-5, 5-1, 6-1
Relevant examples.
18