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Depositing the oxide and coating the photoresist: The depths of oxide and photoresist are
1 μm and 4 μm respectively.
Remove the oxide and photoresist: Using the BOE and Acetone to remove the oxide and
photoresist separately.
KOH wet-etching: The KOH solution is 30 wt% and the temperature is set at 60°C.
Coating the negative photoresist, SU-8: The thickness of SU-8 is 450 μm.
The 2nd photolithographic: This process develops the position of the bottom of
microneedles.
Departing the SU-8 from the silicon wafer: Put the silicon wafer in the MF-319 and the
microneedles will move off the silicon wafer.
Silicon Microneedles
{100} silicon wafer is good for wet-etching, we
choose the KOH as the etching solution with
protection layer of nitride and oxide.
Rely on the diverse crystal orientation of silicon that
has different etching rates
With corner compensation, we can get four (111)
planes with 54.7° between the etched facet and the
horizontal surface
Silicon Microneedles
Cleaning wafer to remove the hydrocarbon and the mist.
Depositing the Oxide and Nitride with the depths are 1 and
0.2 μm respectively.
Cost reduction
brightfield microscopy
Continuous Drug Delivery system
Hollow needles for blood extraction
Gallery
Gallery
Conclusion
MEMS-based microneedles have the potential
to revolutionize biomedical/biotechnology
applications by providing precise transdermal
drug delivery and localized blood sampling.
During the last 10 years
A lot of new and bulk fabrication processes
A lot of patents
More and more functionalities
Some industrial implementations
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