Reflectivity study of the 2-D

macroporous silicon photonic crystals

Zdeněk Král1, Josep Ferré-Borrull1, Lluis F. Marsal1, Josep Pallarés1
T. Trifonov2 , A. Rodriguez2 , R. Alcubilla2

1
NePhoS (Nano-electronic and Photonic Systems), Universitat Rovira i Virgili, Tarragona, Spain
2
Departamento de Ingeniería Electrónica, Universidad Politécnica de Cataluna, UPC, Barcelona,
Spain

1
OUTLINE

 Introduction
 Sample fabrication
 Experimental setup
 Data processing
 Results
 Conclusions

2
 INTRODUCTION
Basic concept of photonic crystals and photonic band gap
Classification: Band structure of 1D photonic crystal:

1D 2D
ck
 (k ) 


3D n(k+G)= n(k), G=2n/a

3
 INTRODUCTION
State of art - Transmission analyzis of photonic crystals
Phase-sensitive microwave transmission
analyzis
monopole monopole

Anechoic chamber
crystal

MOD MXR

sweep X-Y recorder

modulator
oscillator

Yablonovitch E. et al., Phys. Rew. Lett., Vol. 63, Issue 18, Oct. 1989, pp.(1950-1953)
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 INTRODUCTION
State of art - Transmission analyzis of photonic crystals
Transmission spectra analyzis using
emission from InGaAs quantum wells

Laser excitation

Photonic crystal

Cleaved facet
PL source

substrate Guided PL collection

profile
Waveguide
with InGaAs quantum wells

Labilloy D. et al., Phys. Rew. Lett., Vol. 79, Issue 21, Nov. 1997, pp.(4147-4150)
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 INTRODUCTION
State of art - Angular-dependent reflectivity
kinc= 2π/λ kinc// R(λ,θ)

θ θ

k//

kinc// =(2π/λ)·sinθ

if k// = kinc// and ωinc= 2πc/λ= ω(k//)

Astratov V.N. et al.,Optoelectronics, IEE proc., Vol. 145, Issue 6, Dec. 1998, pp.(398-402)
6
Astratov V.N. et al., Journal of lightwave technology, Vol. 17, NO. 11, Nov. 1999, pp.(2050-2056)
 INTRODUCTION
State of art - Angle-resolved attenuated total reflectance ATR

ATR
kinc= 2π/λ kinc// prism ATR

θ θ
k//

air layer Si core

SiO 2 cladding

Galli M. et al., IEEE Journal on Selected Areas in Communications, Vol. 23, Issue 7, July 2005, pp.(1402-1410)
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OUTLINE

 Introduction
 Sample fabrication
 Experimental setup
 Data processing
 Results
 Conclusions

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 SAMPLE FABRICATION
Sample pre -patterning
Sample preparation
SiO2 N-type silicon (100) - thermal oxidation

resist - photolithography

-BHF etching of the

oxide

-TMAH etching of
the silicon
Backside ohmic contact Patterned substrate with inverse pyramids –
basis for macroporous growth
- Ion implantation

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SAMPLE FABRICATION
Macropore formation in n-type silicon
aqueous HF solution

Etching conditions:
• electrolyte
• applied voltage
• current density
• etching time
• temperature
• illumination

10
T. Trifonov, Phys. Stat. Sol. (c) 2, NO. 8, May 2005, pp. (3104-3107).
OUTLINE

 Introduction
 Sample fabrication
 Experimental setup
 Data processing
 Results
 Conclusions

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 EXPERIMENTAL SETUP

FTIR spectrometer Reflectivity attachment Optical microscope

Measurement conditions:
Angle of incidence θ: from 12º to 66º in steps of 2°
Reference: polished N-type silicon wafer
Interferometer Light polarization: natural (TE&TM)
Light source: halogen-tungsten lamp
Detector: nitrogen-cooled LN-MCT
Spectral range: 4000-400 cm-1 (MiD-IR)

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OUTLINE

 Introduction
 Sample fabrication
 Experimental setup
 Data processing
 Results
 Conclusions

13
 DATA PROCESSING
Angular-dependent reflectivity - manual bands recognition
2D Photonic crystal structure: air holes (r=1) etched in a dielectric host (b=12.096 Si)
M

4μm Γ X a  cm 1
K mag  sin 
10 4
cm 1
norm  a 
10 4

Γ-X

Raw data of reflectance spectra Dispersion of the photonic bands

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DATA PROCESSING
Data processing - 2D plot

Theoretical bands calculation

4μm by Plane-wave method

2D plot of reflectance spectra, measured

along ΓX lattice orientation
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DATA PROCESSING
Data processing – differential reflectance

R i 1   R i 
R i  
4μm

 i 1   i

2D plot of reflectance spectra-raw data Differential reflectance spectra

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DATA PROCESSING
Data processing – range restriction

4μm

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OUTLINE

 Introduction
 Sample fabrication
 Experimental setup
 Data processing
 Results
 Conclusions

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RESULTS
Square lattice structure with circular air holes
M

4μm Γ X

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RESULTS
Square lattice structure with circular air holes
ΓX lattice orientation ΓM lattice orientation

4μm

Γ X

ΓX lattice orientation ΓM lattice orientation

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RESULTS
Triangular lattice structure

4μm

ГM
M

Z
Г

ГZ

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RESULTS
Honeycomb lattice structure

5μm
ΓM
M

Z
Г

ΓZ

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CONCLUSIONS

 We have applied the angular-dependent reflectivity

technique for macroporous silicon

 To optimize the measurement in the MID infra-red region,

we defined the data processing method to improve the
bands recognition

 We have proved this technique for different types of lattice

structure

 We propose this technique as a method to recognize the

optical properties of 2D photonic crystals filled with liquid
crystal
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