ECE 414

Low Power VLSI Design (ECEL15)

Static or Leakage Power Dissipation

Semester VII [Fourth Year]

Dr. P. SURESH KUMAR, M.Tech., Ph.D

Associate Professor,
Department of ECE,
R.V.R. & J.C. College of Engineering (Autonomous)
Static or Leakage power dissipation: occurs due to various leakage
mechanisms.

The following seven leakage current components are discussed.

Fig. 6.17  Summary of leakage current mechanisms of deep-submicron transistors

Static or Leakage Power can be broadly cateragorized as

 Diode Leakage (I1, I2)

 Subthreshold Leakage (I3)
 Gate Oxide Leakage (I4-I7)
 Reverse-bias p–n junction diode leakage current (I 1).

Reverse-biased p–n junction current due to the tunneling of electrons from

the valence bond of the p region to the conduction bond of the n region,
known as band-to-band-tunneling current (I 2).

Sub threshold leakage current (I3) between source and drain when the
gate voltage is less than the threshold voltage Vt.

Oxide-tunneling current (I4) due to a reduction in the oxide thickness.

 Gate current due to a hot-carrier injection (I5) of electrons.

Gate-induced drain-leakage (I6) (GIDL) current due to high field effect

in the drain junction.

Channel punch-through current (I7) due to close proximity of the drain

and the source in short-channel devices.
Thank You