Thyristors

Most important type of power semiconductor device. Have the highest power handling capability.they have a rating of 1200V / 1500A with switching frequencies ranging from 1KHz to 20KHz.

 Is inherently a slow switching device compared to BJT or MOSFET. Used as a latching switch that can be turned on by the control terminal but cannot be turned off by the gate.

Different types of Thyristors

Silicon Controlled Rectifier (SCR). TRIAC. DIAC. Gate Turn-Off Thyristor (GTO).

SCR

Symbol of Silicon Controlled Rectifier

Structure
Gate Cathode
+ 19 -3 17 -3 + 19 -3

n J3 J2

10

cm

n 10 cm

10

cm

a
a

10Qm 30-100Qm 50-1000 Qm 30-50Qm

n J1

10 10

13

-5 x 10 cm
-3 -3

14

cm

-3

p p
+

17 19

10

cm

Anode
5

Device Operation

Simplified model of a thyristor

V-I Characteristics
7

Effects of gate current

Two Transistor Model of SCR

10

The general transistor equations are, I C ! F I B  1  F I CBO I C ! E I E  I CBO I E ! IC  I B I B ! I E 1  E  I CBO

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onsidering PNP transistor o the equivalent circuit, I E 1 ! I A , I C ! I C1 ,E ! E1 , I CBO ! I CBO1 , I B ! I B1 @ I B1 ! I A 1  E1  I CBO1    1

12

Considering

transistor

of the equivalent circuit, I C ! I C2 , I B ! I B2 , I E2 ! I K ! I A  I G I C2 ! E 2 I k  I CBO2 I C2 ! E 2 I A  I G  I CBO2    2

13

rom the equivalent circuit, e see that @ I C2 ! I B1 IA ! E 2 I g  I CBO1  I CBO 2 1  E1  E 2

14

ase 1: When I g ! 0 IA ! I CBO1  I CBO2 1  E1  E 2 E 2 I g  I CBO1  I CBO 2 1  E1  E 2

15

Case 2: When I G { 0 IA !

Turn-on Characteristics

ton ! td  tr
16

V AK
C q

IA A de urre begi s de rease C Re ua i very di d Re bi a i

=devi e

ff i ff i

e e
rr q gr

= ir ui

Turn-off Characteristics
17

Methods of Thyristor Turn-on

Thermal Turn-on. Light. High Voltage. Gate Current. dv/dt.

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Thyristor Ratings
First Subscript D p off state T p O state F p Forward R p Reverse
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Second Subscript W p working R p Repetitive S pSurge or non-repetitive

Third Subscript M p eak Value

Voltage Ratings

VDWM VRWM VT

VDRM VRRM dv dt

VDSM VRSM

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ij2

dq2 d C j Vj ! ! 2 2 dt dt C j2 dV j dC j2 2 !  V j2 dt dt

dv/dt Triggering
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dq2 d ! ij 2 ! C j Vj 2 2 dt dt C j2 dV j2 dC j2 !  V j2 dt dt

22

Current Ratings

ITaverage IH

ITRMS di dt

IL

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Gate Specification

I gt VgD Rthjc

Vgt QRR
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Gate Triggering Methods

- Efficient & reliable method for turning on SCR. Types  R - Triggering.  RC - Triggering.  UJT - Triggering.

25

R-Triggering v
O

a
LOAD

b R1

R2

vS=Vm sin[t
D

VT

Vg

Resistance firing circuit

26

With R2 ! 0 Vm Vm I gm ,@ R1 u R1 I gm
Vgm Vm R u R1  R2  R
27

@Vgm R1  R2  R u Vm R @Vgm R1  R2 u R  m  Vgm V

Re

Vgm R1  R2 Vm  Vgm
28

Vm si

Vg

V gt

Vgp Vo

Vgp

Vgt

io

VT

R 2 L arg e

VS

t 3T 4T t

2T

Waveforms of Rtriggering with R2 at large value

Vgp

Vgt
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VS
 

T [t

Vg

Vgp=Vgt

Vo E [t io 70
0

VT

T E 90
0

T
0

E=90

[t

Waveforms of Rtriggering with R2 at optimum value

[t

T [t

Vgp ! Vgt
30

VS T T [t

Vg

V gp >V gt

VT

E<

 

[t

Waveforms of Rtriggering with R2 at small value

[t

[t

Vgp " Vgt

[t

31

RC Triggering
vO
LOAD

+ R D2 VC C D1 VT

vS=Vmsin[t

RC half-wave trigger circuit

32

1.3T RC u 2

VC ! Vgt  Vd 1
vs  Vgt  Vd 1 I gt
33

vs u I gt R  VC ! I gt R  Vgt  Vd 1
Re

vs -T/2 0

V si [ Vgt

0 a vo vc E vc a E

[t

T vT Vm E -Vm

T

T [t

[t

Waveforms of RC half-wave triggering with R at high value

34

vs -T /2 0 vc Vm
E

Vmsi [ t Vgt 0 a vc a Vm
[t

[t

vo 0 vT

0
E

-Vm

T [t

(2 T+E)

Waveforms of RC half-wave triggering with R at low value

35

vO
+ D1 D3 vd C
LOAD

+ R

v =Vmsin[t

D4 -

D2

RC full-wave trigger circuit

36

50T RC u 2
Re vs  Vgt I gt
37

vs

V si [t

[t

vd vd vc
E E

vo

vc

vgt vc
E

[t

vT

[t

Waveforms of RC full-wave triggering with R at high value

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vs

V si [t

[t

vd vgt

v E vT

[t

[t

Waveforms of RC full-wave triggering with R at low value

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B Uni-Junction Transistor
2

Eta-point RB2 p-type E n-type RB1 E

B2

RBB ! RB1  RB 2

B1

B1 Sy bol
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Basic Str cture

B2 + Eta-point RB2 E + Ve B1 Equivalent ircuit of UJT

41

V1 ! VBB
VBB

VD A Ie RB1

RB1 RB1  RB 2

! LVBB VP ! LVBB  VD

V1 LVBB -

Negative Resista ce Regio V Cutoff e regio VBB Vp Saturatio regio R load li e Peak Poi t

Valley Poi t Vv

UJT Characteristics
0 Ip Iv Ie
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UJT Relaxation Oscillator

Ve VBB R E R2 VV C Ve B1 R1 vo X1 =RC T Vo E [ Vp VP Capacitor chargi g V BB+V X2=R1C Capacitor dischargi g

B2

Vv t

Circuit Diagram

Waveforms
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Expression for period of oscillation T

Voltage of capacitor

VC ! V final   initial  V final e V

At t ! T ,

t

RC

VC ! VP , Vinitial ! VV , V final ! VBB

44

@VP ! VBB  VV  VBB e

VBB  VV T ! RC ln VBB  VP

T
RC

45

if VV

VBB ,

1 VBB T ! RC ln ! RC ln V 1  P VBB  VP VBB

But VP ! LVBB  VD
46

VD << VBB VP = LVBB

1 T ! RC ln 1L
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Design
.

VBB  I P R " VP
@R VBB  VP IP
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VBB  IV R VV

VBB  VV @R " IV 4 10 t g ! RB1C RB 2 ! LVBB

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SYNCHRONIZED UJT OSCILLATOR

R1 + D1 D3 Vdc Z VZ vc D4 D2 + i1 R B2 + E B1 C Pulse Tra sformer G1 C1 G2 C2
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R2

To SCR Gates

v , vd

LVZ v Pulse l ag 1 2 1 2 1 2 v v [t

E [

E [

[t
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