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Power Electronics is the art of converting electrical energy from one form to another in an efficient, clean, compact, and robust manner for convenient utilisation The task of power electronics is to process and control the flow of electric energy by supplying voltages and currents in a form that is optimally suited for user loads.
Capacitive and magnetic energy storage elements Rotating and static electrical devices Quality of waveforms generated Electro Magnetic and Radio Frequency Interference Thermal Management
It is not primarily in their power handling capacities While power management IC's in mobile sets working on Power Electronic principles are meant to handle only a few milliwatts large linear audio amplifiers are rated at a few thousand watts
Linear operation Active zone selected: Good linearity between input/output Saturation & cut-off zones avoided: poor linearity Common emitter, Common collector, common base modes
Switching operation Active zone avoided Saturation & cut-off (negative bias) zones selected: low losses Transistor driven directly at base - emitter and load either on collector or emitter
Diodes
(a) thermal equilibrium condition, (b) reverse biased condition, (c) forward biased condition The electric field strength at the junction and the width of the space change region (also called the depletion region because of the absence of free carriers) also increases
Power diodes
Power Diodes of largest power rating are required to conduct several kilo amps of current in the forward direction with very little power loss while blocking several kilo volts in the reverse direction
Circuit symbol
Photograph
(i) non punch through type, (ii) punch through type. In non-punch through diodes the depletion layer boundary doesnt reach the end of the drift layer. On the other hand in punch through diodes the depletion layer spans the entire drift region and is in contact with the n+ cathode Due to very large doping density of the cathode, penetration of drift region inside cathode is negligible
Electric field strength inside the drift region of both these type of diodes at break down voltage