This document contains 4 numerical problems involving MOSFET circuits:
1) A source follower circuit with given gm and ro is analyzed to find voltage gain and output resistance with and without a load.
2) A MOSFET circuit is biased to achieve certain criteria, and its gm, ro, and voltage gains are calculated for different configurations.
3) Open-circuit voltage gain and output resistance are found for source follower and common-gate amplifier circuits using given gm and ro. Overall voltage gain is calculated by connecting the circuits.
4) Drain currents I1 through I4 are calculated for a circuit with MOSFETs having given aspect ratios, assuming some transistors are in saturation.
This document contains 4 numerical problems involving MOSFET circuits:
1) A source follower circuit with given gm and ro is analyzed to find voltage gain and output resistance with and without a load.
2) A MOSFET circuit is biased to achieve certain criteria, and its gm, ro, and voltage gains are calculated for different configurations.
3) Open-circuit voltage gain and output resistance are found for source follower and common-gate amplifier circuits using given gm and ro. Overall voltage gain is calculated by connecting the circuits.
4) Drain currents I1 through I4 are calculated for a circuit with MOSFETs having given aspect ratios, assuming some transistors are in saturation.
This document contains 4 numerical problems involving MOSFET circuits:
1) A source follower circuit with given gm and ro is analyzed to find voltage gain and output resistance with and without a load.
2) A MOSFET circuit is biased to achieve certain criteria, and its gm, ro, and voltage gains are calculated for different configurations.
3) Open-circuit voltage gain and output resistance are found for source follower and common-gate amplifier circuits using given gm and ro. Overall voltage gain is calculated by connecting the circuits.
4) Drain currents I1 through I4 are calculated for a circuit with MOSFETs having given aspect ratios, assuming some transistors are in saturation.
• 1.The source follower of Fig. 4.46(a) uses a MOSFET biased to have
gm = 5 mA/V and r0 = 20 kΩ. Find the open circuit voltage gain Avo and the output resistance. What will the gain become when a 1-kΩ load resistance (RL) is connected? Solution Numerical 2 The MOSFET in the circuit of Fig. P4.87 has Vt = 1 V, k ′ n W L = 0.8 mA/V2 , and VA = 40 V. (a) Find the values of RS, RD, and RG so that ID = 0.1 mA, the largest possible value of RD is used while a maximum signal swing at the drain of ±1 V is possible, and the input resistance at the gate is 10 MΩ. (b) Find the values of gm and ro at the bias point. (c) If terminal Z is grounded, terminal X is connected to a signal source having a resistance of 1 MΩ, and terminal Y is connected to a load resistance of 40 kΩ, find the voltage gain from the signal source to load. (d) If terminal Y is grounded, find the voltage gain from X to Z with Z open-circuited. What is the output resistance of the source follower? (e) If terminal X is grounded and terminal Z is connected to a current source delivering a signal current of 10 µA and having a resistance of 100 kΩ, find the voltage signal that can be measured at Y. For simplicity, neglect the effect of ro. (e) Numerical 3 • The NMOS transistor in the source-follower circuit of Fig P4.88(a) has gm = 5 mAV and a large ro. Find the open-circuit voltage gain and the output resistance. (b) The NMOS in the common-gate amplifier of Fig P4.88(b) has gm = 5 mA/V and a large ro. Find the input resistance and the voltage gain Solutions Numerical 3 • The NMOS transistor in the source-follower circuit of Fig P4.88(a) has gm = 5 mAV and a large ro. Find the open-circuit voltage gain and the output resistance. (b) The NMOS in the common-gate amplifier of Fig P4.88(b) has gm = 5 mA/V and a large ro. Find the input resistance and the voltage gain. Home WORK:(c) If the output of the source follower in (a) is connected to the input of the common-gate amplifier in (b), use the results of (a) and (b) to obtain the overall voltage gain vo/vi. Numerical 4 For the circuit shown below, transistors (Q1-Q4) have μnCox = 0.04 mA/ V2 , Vt =1V, and λ =0. The aspect ratios of the MOSFET are as follows: Q1: (W/L)1 = 10, Q2 : (W/L)2 = 100, Q3 : (W/L)3= 1000 and Q4 : (W/L)4 = 1, Assume transistors (Q2, Q3 and Q4) are in saturation. Find I1, I2, I3, I4. Solution