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NPN Epitaxial Darlington Transistor: Medium Power Linear Switching Applications
NPN Epitaxial Darlington Transistor: Medium Power Linear Switching Applications
TIP120/121/122
Medium Power Linear Switching Applications
Complementary to TIP125/126/127
1.Base
VCEO
Collector-Emitter Voltage : TIP120 : TIP121 : TIP122 Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Collector Dissipation (Ta=25C) Collector Dissipation (TC=25C) Junction Temperature Storage Temperature
R1 8k R2 0.12k
ICEO
TIP120/121/122
Typical characteristics
10000
VCE = 4V
3.5
IC = 250IB
3.0
2.5
1000
2.0
1.5
V BE(sat)
1.0
V CE(sat)
0.5 0.1
100 0.1
10
10
1000 10
f=0.1MHz
s 0u 10 us 0 50
s 1m
s 5m
C D
100
Cob Cib
0.1
10 0.1
10
100
0.01 1 10 100
80
70
60
50
40
30
20
10
0 0 25 50
o
75
100
125
150
175
TIP120/121/122
Package Demensions
TO-220
9.90 0.20
1.30 0.10 2.80 0.10
4.50 0.20
(1.70)
1.30 0.05
+0.10
9.20 0.20
(1.46)
13.08 0.20
(1.00)
(3.00)
15.90 0.20
1.27 0.10
1.52 0.10
10.08 0.30
18.95MAX.
(3.70)
(45 )
0.50 0.05
+0.10
2.40 0.20
10.00 0.20
Dimensions in Millimeters
2000 Fairchild Semiconductor International Rev. A, February 2000
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Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. E