Technical Data Sheet

Features Fast response tine High photo sensitivity Pb free This product itself will remain within RoHS conpliant version. Descriptions YG1006 is a high speed and high sensitive NPNsiicon phototransistor in a standard5mm package. Dueto its black epoxy the device is sensitive to infrared radiation. Package Dimensions

Note : 1. All dimensions are in millimeters

2. Tolerances unless dimensions 0.25mm

Absoulute Maximum Ratings (Ta25)

Parameter
Collector-Emitter Voltage Emitter-Collector-Voltage Collector Current Operating Temperature Storage Temperature Lead Soldering Temperature Power Dissipation at (or below) 25 FreeAir Temperature

Symbol
VCEO VECO Ic Topr Tstg Tsol Pc

rating
30 5 20 -25+85 -40+85 260 75

units
V V mA mW

Electro-Opticai Characteristcs (Ta=25)

1 6

Parameter Collector-Emitter Breakdown VoItage

Symbol BVCEO

Condition Ic=100A Ee=0mW/C

Min. 30

Typ. ---

Max. ---

Units V Rankings

Emitter-Collector Saturation VoItage Collector-Emitter Saturation VoItage Rise Time Fall Time Collector Dark Current On State Collector Current Wavelength of Peak Sensitivity Rang of Spectral Bandwidth Parameter Symbol

BVECO

IE=100A Ee=0mW/C Ic=2mA Ee=1mW/C VCE=5V Ic=1mA RL=1000 Ee=0mW/C VCE=20V Ee=1mW/ C VCE=5V -----

---

---

VCE(sat)

---

---

0.4

tf tf ICEO Ic(on)

------1.77

15 15 -------

----100 7.07

nA mA

-----

940 760-1100

-----

nm nm

0.5 Min Max Unit Test Condition VCE=5V Ee=1mW/ C

J K L

Ic(on)

1.77 2.67 4.18

3.61 5.07 7.07

mA

Typical Electro-Optical Characteristics Curves

2 6

 3 6

Typical Electro-Optical Characteristecs

4 6

 5 6

 6 6