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LED3
LED3
LED3
Last Lectures..
Definition of LED Candidate Materials
Applications of LED
LED I&2
LED Configuration Designing efficient LED
Materials Requirements
Why n+-p?
e = Denp/Le Denp/Lp + Dhpn/Lh = DhpnLe DennLp ennLp 1+ hpnLe
Or e
III-V compounds, e >> h then, e needs to be close to unity. This can be circumvent by doping n with more electrons (n >> p)
LED Characteristic
The energy of an emitted photon = to the size of the band gap BUT this is a simplified statement. The energy of an emitted photon from LED is distributed appropriately according to the energy distribution of electrons on the conduction band and holes in the valance band. You need to know the distribution of electrons and holes in the CB and VB respectively.
external
Poutput (optical) IV
x100 %
TIR
Incident beam
Plastic dome
n+
Pn junction
Electrodes
Electrodes
to reduce TIR
GaAs-air interface, the C = 16o which means that much of the light suffers TIR. To solve the problem we could: 1. Shape the surface of the semiconductor into a dome or hemisphere so that light rays strike the surface angles < C therefore does not experience TIR. But expensive and not practical to shape p-n junction with dome-like structure. 2. Encapsulation of the semiconductor junction within a dome-shaped transparent plastic medium (an epoxy) that has higher refractive index than air.
LED Structure
LED
1. Surface Emitter
In surface emitter the emitting area is defined by oxide isolation, with the metal contact area a circle of diameter ~ 10m-15 m. The surface layer is kept as thin as possible (10-15 m) to minimise reabsorbtion
Heterostructured LED
Double Heterostructure
The double heterostructure is invariably used for optical sources for communication as seen in the figure in the pervious slide. Heterostucture can be used to increase:
Efficiency by carrier confinement (band gap engineering) Efficiency by photon confinement (refractive index)
The double heterostructure enables the source radiation to be much better defined, but further, the optical power generated per unit volume is much greater as well. If the
Active region (thin layer of GaAs) has smaller band gap, energy of photons emitted is smaller then the band gap of the P and N-GaAlAs hence could not be reabsorbed.
Reabsorption Problem
In order to prevent reabsorption, the upper layer (one that is above the active region) needs to have higher band gap therefore the emitted photons will not be absorbed by the upper layer (photons will be absorbed when Ep < Eg).
1.4eV 2eV
n-AlGaAs p-GaAs
p-AlGaAs
p Al GaAs n+ GaAs
Metal contact
Active region Photons will not be absorbed by the nAlGaAs since the band gap is much higher than GaAs
Carrier confinement
electrons
n+-AlGaAs
p-GaAs
holes p+-AlGaAs
Burrus-Type LED
Communication LED
Sketch a typical surface emitted LED that can emit red light. Explain why for such configuration, the light source can be suitable for optical communication. Start your answer with the reasons why photon and carrier
2. Edge Emitter
In edge emitter a double heterostructure band gap engineering is used to achieve carrier confinement and recombination in an active layer but in addition layers of relatively low refractive index are included to produce optical guide. A large fraction of the photons are therefore confined between two plates of material and emerge at the
GaAs(n) substrate N+- GaAlAs N GaAlAs Active layer n- GaAlAs P GaAlAs P+ GaAlAs n- GaAlAs Metal contact
The waveguide
We can use refractive index engineering to create a multilayer structure in which light can be trapped within the central layers. This layer act as waveguide. (TIR is used in Edge Emitter)
Epi growth
Active Layer