Professional Documents
Culture Documents
. On
1
and
2
,
the tangential components of the magnetic
field can be expressed as
) (
scat sc tot
H H n H n + (1)
To maintain uniqueness in the solution, the
tangential components of the magnetic field
2
Region B ( z < -d )
-M22(x,y)
2
M2(x,y)
Fig. 2: Equivalent currents introduced in the aperture planes.
-M1(x,y)
Region C
M1(x,y)
d
2
M2(x,y)
-M1(x,y)
Region A ( z > 0 )
1
C C
,
1
x
Fig. 3: Problem geometry decomposed into three
regions; A, B, and C.
-M
2
(x,y)
- z
x = -d
B B
,
upper aperture
lower aperture
cavity wall
(a)
y
x
o
Region A
(b)
Region C
Region B conductor conductor
J
i
, M
i
z
y
x
o
Fig.1 Problem geometry (a) Top view (b) Cross-sectional
view
must be continuous across
1
and
2
, within
region C. Let
) ( ) (
2 1
M H M H
tot tot
+ ; ) ( ) (
1 2
M H M H
tot tot
+ (2)
be the magnetic field on
1
and
2
,
respectively, produced by the equivalent
currents -
1
M and
2
M .
By matching the tangential components of the
exterior and interior magnetic fields on
1
and
2
, Eq. (1) can be expressed as
)) ( ) ( ) ( (
1 2 1
M H M H M H n H n
scat tot tot sc
+
on
1
)) ( ) ( ) ( (
2 1 2
M H M H M H n H n
scat tot tot sc
+
on
2
(3)
for regions A and B, respectively. Eq. (3) is then
solved using the method of moments following a
similar procedure as in [5]. The equivalent
currents are expanded into a series of known
basis functions weighted by unknown
coefficients. A set of vector testing functions,
which are chosen to be the same as the basis
functions (Galerkin procedure), is introduced.
3.1 Computing Exterior Admittance
Matrices- MOM
The vector testing functions
1 m
W are distributed
over
1
, and the functions
2 m
W over
2
.
Taking the inner product of Eq. (3) with the
testing functions and taking the advantage of the
linearity of the operators result in on
1
given by
Eq. (6)
similar expression can be derived for fields on
2
, with the equivalent magnetic currents
1
M
and
2
M given as
( ) ( )
N
n
n n
y x M V z y x M
1
1 1 1
, 0 , , (7)
( ) ( )
P
n
n n
y x M V d z y x M
1
2 2 2
, , ,
(8)
Now
( )
NxN n
scat
t m
A
M H W Y ] , [ ] [
1 1
> <
(9)
2.1.1 Matrix Elements Evaluation
As explained in [9], following Galerkin
procedure (
m m
M W ), a typical matrix
element for the r
th
region is given by
> < ) ( , 2
n
r
t m
r
mn
M H M Y
=
'
+
+
m m
T
n
r
t m
T
n
r
t m
ds M H M ds M H M ) ( ) ( 2
=
t
m
T
n
r
t m
ds M H M ) ( 2
(12)
where the notation
+
m
T
ds ) (
has been
introduced for compactness.
In terms of the electric vector potential ) (r F
and the magnetic scalar potential
) (r
, the
magnetic field ) (
n
r
M H can be written as (13)
3
) 6 ( ) ( , ) ( , ) ( ( , ,
1 1 1
1
1 2 1 1
1
2 1 1 1
1
1 1 1
> < > < + > < > <
n
scat
t m
N
n
n
tot
t m
p
n
n n
tot
t m
N
n
n
sc
t m
M H W V M H W V M H W V H W
Applying two-dimensional divergence theorem to
Eq. (12), leads to
ds m ds F M j Y
m m
T
n m
T
n m
r
mn
t t
+ 2 2
(16)
4
r r
n
n
j
r F
r
) (
) (
(15)
) ( ) ( ) ( r r F j M H
n n n
r
(13)
) (r F
n
=
T
n
r
ds r M r r G ' ) ' ( ) ' / (
(14)
Eqn. (16) contains quadruple integrals; a double
integral over the field triangles
t
m
T and a double
integral over the source triangles
t
n
T involved in the
computation of ) (r F
n
and
) (r
n
. In order to reduce
the numerical computations, the integrals over
t
m
T
can be approximated by the values of integrals at the
centroids of the triangles. This procedure yields
'
+
1
1
]
1
+
+
+
+
) ( ) (
2
) (
2
) (
2
c
m n
c
m n
c
m c
m n
c
m c
m n
m
r
mn
r r
r F r F j
l Y
(17)
where
t
t t
n
T
c r c
m n
r r G r F ) ' | ( ) (
' ) ' ( ds r M
n
(18)
{ }
t
t t
n
T
n
c
r
c
m n
ds r M r r G
j
r ' ) ' ( ) ' | (
1
) (
(19)
In (17),
t c
m
are the local position vectors to the
centroids of
t
m
T and
t c
m
r = 3 / ) (
3 2 1 t t t
+ +
m m m
r r r are the
position vectors of centroids of
t
m
T with respect to
the global coordinate system.
Similarly, as explained in [9], using the
centroid approximation in Eqn. (11), an element of
excitation vector can be written as
'
+
+
2
) (
2
) (
c
m c
m
i
t
c
m c
m
i
t m
i
m
r H r H l I
(20)
3.2 Computing Interior Admittance Matrix
Y
C
- FEM
Within the cavity region, the magnetic fields must
satisfy the vector Helmholtz equation
0
1
2
H k H
r
r
(21)
where
H
is the total magnetic field. The cavity
region is defined as a closed space confined by PEC
walls, which will be referred to as the domain
V
. A
functional described by the inner product of the
vector wave equation and the vectors testing function,
H
, is expressed as
( ) dV H H k H H H F
r
r
1
]
1
* 2 *
1
(22)
is defined. The solution of the boundary-value
problem is then found variationally, by solving for
the magnetic field at a stationary point of the
functional via the first variation
( ) 0 H F (23)
The functional has a stationary point (which occurs at
an extremum ) and equations (21) and (22) can be
used to derive a unique solution for the magnetic
field. For an arbitrary volume, V , the solution of the
above variational expression cannot be found
analytically and is derived via the FEM. To this end,
the domain V is discretized into a finite number of
subdomains, or element domains, e
V
. Finite elements
are chosen with lower degree that are compatible
with the required regularity to minimize
computational costs. Isoparametric tetrahedron
elements (triangles on the surfaces and tetrahedrons
for the volumes) with linear basis functions for the
integral operators and for the differential surface and
volume operators are chosen.
It is assumed that each element domain e
V
has a
finite volume and that the material profile within this
volume is constant. Within each element domain the
vector magnetic field is expressed as
e
H . If there
are e
N
element domains within V , the functional can
be expressed in terms of the approximate magnetic
fields as
Applying the vector identity
and the divergence theorem, (12 ) can be written as
5
( )
'
1
]
1
e
N
e
e e e r e
r
e
dV H H k H H H F
1
* 2
0
*
1
(24)
( )
* * *
1 1
.
1
e e
r
e
r
e e
r
e
H H H H H H
,
_
+
1
1
]
1
,
_
(25)
M H
k
j H n H
e e e
r
*
0
0 *
.
1
(27)
( )
( ) ( )
'
1
]
1
+
1
]
1
e
N
e
e e e
r
e e e r e e
r
dS H n H
dV H H k H H
H F
1
*
* 2
0
*
1
.
1
(26)
( )
PxP p
scat
t m
B
M H W Y ] , [ ] [
2 2
> <
(10)
1 1 1
] , [
N
sc
t m
i
H W I
(11)
implying contribution from only regions of implied
magnetic current sources, i.e., at the apertures only.
The approximate vector field in each element domain
is represented as
m
j
ej ej
W H
1
(28)
with the spatial vector
ej
W
(29)
and
i
is the barycentric function of node i
expressed as
( )
( )
e
i b
i
V
A r r
r
3
.
4
1
+
(30)
where
i
A
is the position vector of the barycenter of the
tetrahedron defined as
( )
4
3 2 1 0
r r r r
r
b
+ + +
(31)
in which
i
r
'
1
]
1
e
N
e
m
j
m
i
e ei ej ei ej
r
ei ej e
dV W W k W W H F
1 1 1
2 *
. .
1
'
dS M W
k
j
n b
N
b
b
b
.
0
0
1
*
(32)
Letting
(33)
and
dS M W
k
j P
n b nb
.
0
0
(34)
equation (22 ) becomes
( )
nb
N
b
b
N
e
m
j
m
i
ji ei ej e
P N H F
b e
'
1
*
1 1 1
*
(35)
By enforcing the continuity of the magnetic field, a
global number scheme can be introduced. The
following symmetric and highly sparse matrix results
1
]
1
1
]
1
1
]
1
nb b
e
bb be
eb ee
P N N
N N 0
(36)
where:
b
are coefficients weighting the edge
elements lying in the aperture plane
1
and
2
.
e
are coefficients weighting the remaining edge
elements in region C.
2.2.1 Computing Interior Matrix [ ]
C
Y
The computation of the nth column of [ ]
C
Y in (6) and
(7) is performed by perturbing the cavity with an
equivalent current basis function
n
M
. Then, with the
use of (21), the interior tangential magnetic fields in
the aperture planes,
1
and
2
, are computed. The
first N row elements of the nth column of [ ]
C
Y are
then computed by taking the inner product of the
aperture field on
1
, successively with the N testing
functions
N
W . The next P row elements of the nth
column are computed by taking the inner product of
the aperture field on
2
with the P testing functions
Q
W . Similarly, the remaining P columns of [ ]
C
Y can
be computed by perturbing the cavity with equivalent
current basis functions
p
M
.
2.1 Complete Admittance Matrix
The complete admittance matrix from Eq. (13) can be
expressed as
The advantage of using this function is that the
admittance matrices of the interior and the exterior
regions can be constructed independently.
The aperture admittance matrices [ ]
A
Y and [ ]
B
Y are
computed by solving the problem of the equivalent
magnetic currents radiating into a half-space. The
aperture admittance matrix [ ]
C
Y is computed by
solving the interior cavity problem.
Figs. 4 and 5 define the dimensions of cross-shaped
and diamond-shaped aperture problems analyzed in
this work.
6
Fig. 8: x-directed Surface Magnetic Current Distributions at y/h = -0.0833 for Diamond-shaped slots with
h/ = 0.3556 and L/ = 0.8 in a Conducting Screen of thickness t.
[ ] [ ]
[ ] [ ]
[ ]
[ ]
1
]
1
1
]
1
+
1
]
1
1
]
1
1
]
1
n
n
B
A
n
n
C C
C C
s c
s c
V
V
Y
Y
V
V
Y Y
Y Y
H
H
2
1
2
1
22 21
12 1 1
2
1
0
0
(37) ( ) ( )
1
]
1
e ei ej ei ej
r
ji
dV W W k W W N
. .
1
2
xx
/
2
y
/
2
(c) A:air, B:glass, C:titaniumdioxide, D:air, t = 0.01
0.00000
0.00010
0.00020
0.00030
0.00040
0.00050
0.00060
0.00070
0.00080
-100.0 -50.0 0.0 50.0 100.0
Angle(Degrees)
xx
/
2
y
/
2
(e) A:air, B:glass, C:titanium dioxide, D:air, t = 0.1
0.00000
0.00010
0.00020
0.00030
0.00040
0.00050
0.00060
0.00070
0.00080
-100.0 -50.0 0.0 50.0 100.0
Angle(Degrees)
xx
/
2
y
/
2
(f) A:air, B:titanium dioxide, C:glass, D:air, t = 0.1
0.0000
0.0010
0.0020
0.0030
0.0040
0.0050
0.0060
0.0070
0.0080
-100.0 -50.0 0.0 50.0 100.0
Angle(Degrees)
xx
/
2
y
/
2
(d) A:air, B:titanium dioxide, C:glass, D:air, t = 0.01
0.0000
0.0010
0.0020
0.0030
0.0040
0.0050
0.0060
0.0070
0.0080
-100.0 -50.0 0.0 50.0 100.0
Angle(Degrees)
xx
/
2
y
/
2
thick conductor
thick conductor
aperture
A B C D
Fig. : Transmission Cross-sections
y
/
2
and
xx
/
2
for inhomogeneously filled
Diamond-Shaped Slots, L/ = 0.8, in a Conducting Screen of thickness t.
y
/
2
xx
/
2
Fig. 9: Transmission Cross-sections
y
/
2
and
xx
/
2
for inhomogeneously filled Diamond-Shaped
Slots, L/ = 0.8, in a Conducting Screen of thickness t.
(a) A:air, B:glass, C:titaniumdioxide, D:air, t = 0.001
0.000
0.005
0.010
0.015
0.020
0.025
-0.6 -0.4 -0.2 0.0 0.2 0.4 0.6
x/L
|
M
x
|
-12
-10
-8
-6
-4
-2
0
P
h
a
s
e
(
d
e
g
r
e
e
s
)
M1
M2
M1 phase
M2 phase
(b) A:air, B:titaniumdioxide, C:glass, D:air, t = 0.001
0.00
0.05
0.10
0.15
0.20
0.25
-0.6 -0.4 -0.2 0.0 0.2 0.4 0.6
x/L
|
M
x
|
-12
-10
-8
-6
-4
-2
0
P
h
a
s
e
(
d
e
g
r
e
e
s
)
M1
M2
M1 phase
M2 phase
(c) A:air, B:glass, C:titaniumdioxide, D:air, t = 0.01
0.000
0.005
0.010
0.015
0.020
0.025
-0.6 -0.4 -0.2 0.0 0.2 0.4 0.6
x/L
|
M
x
|
-12
-10
-8
-6
-4
-2
0
P
h
a
s
e
(
d
e
g
r
e
e
s
)
M1
M2
M1 phase
M2 phase
Fig. : x-directed Surface Magnetic Current Distributions at y/h = -0.0833 for Diamond-
shaped slots with h/ = 0.3556 and L/ 0.8 in a Conducting Screen of thickness t.
(e) A:air, B:glass, C:titaniumdioxide, D:air, t = 0.1
0.000
0.005
0.010
0.015
0.020
0.025
-0.6 -0.4 -0.2 0.0 0.2 0.4 0.6
x/L
|
M
x
|
-15
-10
-5
0
5
10
15
20
25
30
35
P
h
a
s
e
(
d
e
g
r
e
e
s
)
M1
M2
M1 phase
M2 phase
(f) A:air, B:titaniumdioxide, C:glass, D:air, t = 0.1
0.00
0.05
0.10
0.15
0.20
0.25
-0.6 -0.4 -0.2 0.0 0.2 0.4 0.6
x/L
|
M
x
|
-15
-10
-5
0
5
10
15
20
25
30
35
P
h
a
s
e
(
d
e
g
r
e
e
s
)
M1
M2
M1 phase
M2 phase
(d) A:air, B:titanium dioxide, C:glass, D:air, t = 0.01
0.00
0.05
0.10
0.15
0.20
0.25
-0.6 -0.4 -0.2 0.0 0.2 0.4 0.6
x/L
|
M
x
|
-12
-10
-8
-6
-4
-2
0
P
h
a
s
e
(
d
e
g
r
e
e
s
)
M1
M2
M1 phase
M2 phase
thick conductor
thick conductor
aperture
A B C D
Fig. 8: x-directed Surface Magnetic Current Distributions at y/h = -0.0833 for Diamond-shaped slots with
h/ = 0.3556 and L/ = 0.8 in a Conducting Screen of thickness t.
(a) A:air, B:glass, C:titanium dioxide, D:air, t = 0.001
0.00000
0.00020
0.00040
0.00060
0.00080
0.00100
0.00120
0.00140
-100.0 -50.0 0.0 50.0 100.0
x/L
(b) A:air, B:titanium dioxide, C:glass, D:air, t = 0.001
0.0000
0.0020
0.0040
0.0060
0.0080
0.0100
0.0120
0.0140
-100.0 -50.0 0.0 50.0 100.0
x/L
xx
/
2
y
/
2
(c) A:air, B:glass, C:titanium dioxide, D:air, t = 0.01
0.00000
0.00020
0.00040
0.00060
0.00080
0.00100
0.00120
0.00140
-100.0 -50.0 0.0 50.0 100.0
x/L
xx
/
2
y
/
2
(e) A:air, B:glass, C:titanium dioxide, D:air, t = 0.1
0.00000
0.00020
0.00040
0.00060
0.00080
0.00100
0.00120
0.00140
-100.0 -50.0 0.0 50.0 100.0
x/L
xx
/
2
y
/
2
(f) A:air, B:titanium dioxide, C:glass, D:air, t = 0.1
0.0000
0.0020
0.0040
0.0060
0.0080
0.0100
0.0120
0.0140
-100.0 -50.0 0.0 50.0 100.0
x/L
xx
/
2
y
/
2
(d) A:air, B:titanium dioxide, C:glass, D:air, t = 0.01
0.0000
0.0020
0.0040
0.0060
0.0080
0.0100
0.0120
0.0140
-100.0 -50.0 0.0 50.0 100.0
x/L
xx
/
2
y
/
2
thick conductor
thick conductor
aperture
A B C D
Fig. : Transmission Cross-sections
y
/
2
and
xx
/
2
for inhomogeneously filled
Cross_Shaped Slots, L = h = 2 /3, Aw = L/4, in a Conducting Screen of thickness t.
y
/
2
xx
/
2
Fig. 7: Transmission Cross-sections
y
/
2
and
xx
/
2
for inhomogeneously filled
Cross-Shaped Slots, L = h = 2/3, Aw = L/4, in a Conducting Screen of thickness t.
L
h
A
w
x
-x
y
-y
Fig. 4: Cross-shaped slot dimensions
y
x
L/2 L/2
h/2
h/2
Fig.5: Diamond-shaped slot dimensions