1N4148 / 1N4448

FAST SWITCHING DIODE Features

Fast Switching Speed General Purpose Rectification Silicon Epitaxial Planar Construction
A

Mechanical Data
Case: DO-35 Leads: Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Marking: Type Number Weight: 0.13 grams (approx.)
DO-35 Dim A B C D Min 25.40

Max 4.00 0.60 2.00

All Dimensions in mm

Maximum Ratings @ TA = 25C unless otherwise specified

Characteristic Non-Repetitive Peak Reverse Voltage Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current (Note 1) Average Rectified Output Current (Note 1) Non-Repetitive Peak Forward Surge Current @ t = 1.0s @ t = 1.0ms Power Dissipation (Note 1) Derate Above 25C Thermal Resistance, Junction to Ambient Air (Note 1) Operating and Storage Temperature Range Symbol VRM VRRM VRWM VR VR(RMS) IFM IO IFSM Pd RqJA Tj , TSTG 300 150 1.0 2.0 500 1.68 300 -65 to +175 1N4148 100 75 53 500 1N4448 Unit V V V mA mA A mW mW/C K/W C

Electrical Characteristics
Characteristic Maximum Forward Voltage

@ TA = 25C unless otherwise specified Symbol 1N4148 1N4448 1N4448 VFM Min 0.62 Max 1.0 0.72 1.0 5.0 50 30 25 4.0 4.0 Unit V mA mA mA nA pF ns Test Condition IF = 10mA IF = 5.0mA IF = 100mA VR = 75V VR = 70V, Tj = 150C VR = 20V, Tj = 150C VR = 20V VR = 0, f = 1.0MHz IF = 10mA to IR =1.0mA VR = 6.0V, RL = 100W

Maximum Peak Reverse Current Capacitance Reverse Recovery Time

IRM Cj trr

Notes: 1. Valid provided that device terminals are kept at ambient temperature.

DS12019 Rev. B-2

1 of 2

1N4148 / 1N4448

IF, INSTANTANEOUS FORWARD CURRENT (mA)

1000

10,000

100
IR, LEAKAGE CURRENT (nA)
1000

10

100

1.0

10

0.1

VR = 20V

0.01 0 1 2 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 1 Forward Characteristics

1 0 100 200 Tj, JUNCTION TEMPERATURE (C) Fig. 2, Leakage Current vs Junction Temperature

DS12019 Rev. B-2

2 of 2

1N4148 / 1N4448