1N914/A/B

75mA Axial Leaded High Speed Switching Diodes

Features
· High switching speed: max. 4 ns
· Continuous reverse voltage:max. 75 V
· A B A
Repetitive peak reverse voltage:max. 100 V
· Repetitive peak forward current: max. 225 mA

C
D

DO-35
Mechanical Data
Dim Min Max
· Case: DO-35 Glass Case A 25.40 ¾
· Weight: approx. 0.13g
B ¾ 4.00
C ¾ 0.60
D ¾ 2.00
All Dimensions in mm

Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified

Parameter Symbol Value Unit

Maximum Repetitive Peak Reverse Voltage VRRM 100 V
Maximum Continuous Reverse Voltage VRM 75 V
Maximum Continuous Forward Current IF 75 mA
Maximum Power Dissipation PD 250 mW
Maximum Repetitive Peak Forward Current IFRM 225 mA
Maximum Non-repetitive Peak Forward Current at t = 1s IFSM 0.5 A
Maximum Junction Temperature TJ 175 °C
Storage Temperature Range TS -65 to + 200 °C
Parameter Symbol Test Condition Min Typ Max Unit
VR = 20 V - - 25 nA
Reverse Current IR
VR = 20 V , Tj = 150 °C - - 50 μA
1N914 IF = 10 mA - - 1.0 V
1N914A IF = 20 mA - - 1.0 V
Forward Voltage VF
1N914B IF = 5 mA 0.62 - 0.72 V
1N914B IF = 100 mA - - 1.0 V
Diode Capacitance Cd f = 1MHz ; VR = 0 - - 4.0 pF
IF = 10 mA to I R = 60 mA
Reverse Recovery Time Trr RL = 100 Ω ; measured - - 4 ns
at IR = 1mA

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 FIG. 1 MAXIMUM PERMISSIBLE CONTINUOUS FIG. 2 TYPICAL FORWARD VOLTAGE
FORWARD CURRENT AS A FUNCTION OF
AMBIENT TEMPERATURE.

100 1000
CONTINUOUS FORWARD CURRENT,

Lead Length 10mm.

100

Forward Current , IF (mA)

75

10
IF (mA)

50

1
TJ = 25°C

25
0.1

0 0.01
0 100 200 0 0.4 0.8 1.2 1.4

Ambient Temperature , Ta (°C) Forward Voltage , VF (V)

FIG. 3 TYPICAL DIODE CAPACITANCE AS FIG. 4 TYPICAL REVERESE CURRENT

A FUNCTION OF REVERSE VOLTAGE VERSUS JUNCTION TEMPERATURE

1.2 103

1.0 VR = 75V
2
Diode Capacitance , Cd (pF)

Reverse Current , IR (μA)

10

0.9

0.8
10

0.7

f = 1MHz; 1
0.6
TJ = 25°C

10-1
0.5

0.4 10-2

0 10 20 0 100 200

Reverse Voltage , V R (V) Junction Temperature , Ta (°C)

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