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STB75NF75 STP75NF75 - STP75NF75FP: N-Channel 75V - 0.0095 - 80A - TO-220 - TO-220FP - D PAK Stripfet™ Ii Power Mosfet
STB75NF75 STP75NF75 - STP75NF75FP: N-Channel 75V - 0.0095 - 80A - TO-220 - TO-220FP - D PAK Stripfet™ Ii Power Mosfet
N-channel 75V - 0.0095 - 80A - TO-220 - TO-220FP - D2PAK STripFET II Power MOSFET
General features
Type STB75NF75 STP75NF75 STP75NF75FP VDSS 75V 75V 75V RDS(on) <0.011 <0.011 <0.011 ID 80A(1) 80A(1) 80A(1) TO-220
3 1 2
1 3 2
TO-220FP
Description
This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.
DPAK
Applications
Switching application
Order codes
Part number STB75NF75T4 STP75NF75 STP75NF75FP Marking B75NF75 P75NF75 P75NF75 Package DPAK TO-220 TO-220FP Packaging Tape & reel Tube Tube
February 2007
Rev 8
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Contents
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
3 4 5 6
Test circuit
................................................ 9
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Electrical ratings
Electrical ratings
Table 1.
Symbol VDS VDGR VGS ID
(1)
dv/dt
Peak diode recovery voltage slope Single pulse avalanche energy Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s;TC=25C) Operating junction temperature Storage temperature
1. Current limited by package 2. Pulse width limited by safe operating area 3. ISD 80A, di/dt 300A/s, VDD V(BR)DSS, Tj TJMAX 4. Starting TJ = 25 oC, ID = 40A, VDD = 37.5V
Table 2.
Symbol RthJC RthJA Tl
Thermal data
Value Parameter Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose(1) D2PAK /TO-220 0.5 62.5 300 Unit TO-220FP 3.33 C/W C/W C
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Electrical characteristics
Electrical characteristics
(TCASE=25C unless otherwise specified) Table 3.
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on)
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250A, VGS= 0 VDS = Max rating, VDS = Max rating @125C VGS = 20V VDS= VGS, ID = 250A VGS= 10V, ID= 40A 2 3 Min. 75 1 10 100 4 Typ. Max. Unit V A A nA V
0.0095 0.011
Table 4.
Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions VDS = 15V, ID = 40A VDS =25V, f = 1 MHz, VGS = 0 Min. Typ. 20 3700 730 240 117 27 47 160 Max. Unit S pF pF pF nC nC nC
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Electrical characteristics
Table 5.
Symbol td(on) tr td(off) tf
Switching times
Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD= 37.5V, ID= 45A, RG=4.7, VGS=10V Figure 15 on page 9 Min. Typ. 25 100 66 30 Max. Unit ns ns ns ns
Table 6.
Symbol ISD ISDM(1) VSD(2) trr Qrr IRRM
1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300s, duty cycle 1.5%
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Electrical characteristics
2.1
Figure 1.
Figure 3.
Figure 4.
Figure 5.
Output characterisics
Figure 6.
Transfer characteristics
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Figure 9.
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Test circuit
Test circuit
Figure 16. Gate charge test circuit
Figure 17. Test circuit for inductive load Figure 18. Unclamped inductive load test switching and diode recovery times circuit
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P
Q
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DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7
L3 L6 L7
F1 F
G1 H
F2
L2
L5
1 2 3
L4
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* on sales type
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Revision history
Revision history
Table 7.
Date 03-Aug-2006 15-Sep-2006 27-Feb-2007
Revision history
Revision 6 7 8 Complete version RDS(on) value update The document has been reformatted Changes
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