BUP 203

IGBT Preliminary data Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated Pin 1 G Type BUP 203 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1000 1200 Unit V Pin 2 C Ordering Code Q67078-A4402-A2 Pin 3 E

VCE

IC

Package TO-220 AB

1000V 23A

VCE VCGR VGE IC

RGE = 20 k
Gate-emitter voltage DC collector current

20 A 23 15

TC = 25 C TC = 90 C
Pulsed collector current, tp = 1 ms

ICpuls
46 30

TC = 25 C TC = 90 C
Avalanche energy, single pulse

EAS
20

mJ

IC = 10 A, VCC = 24 V, RGE = 25 L = 3 mH, Tj = 25 C

Power dissipation

Ptot
165

W -55 ... + 150 -55 ... + 150 C

TC = 25 C
Chip or operating temperature Storage temperature

Tj Tstg

Semiconductor Group

Dec-06-1995

BUP 203

Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance IGBT thermal resistance, chip case Symbol Values E 55 / 150 / 56 Unit -

RthJC

0.63

K/W

Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit

VGE(th)
4.5 5.5 2.8 3.8 4 0.1 6.5 3.3 4.3 4.5

VGE = VCE, IC = 0.7 mA

Collector-emitter saturation voltage

VCE(sat)
-

VGE = 15 V, IC = 10 A, Tj = 25 C VGE = 15 V, IC = 10 A, Tj = 125 C VGE = 15 V, IC = 10 A, Tj = 150 C

Zero gate voltage collector current

ICES
150 700

VCE = 1000 V, VGE = 0 V, Tj = 25 C VCE = 1000 V, VGE = 0 V, Tj = 125 C

Gate-emitter leakage current

IGES
100

nA

VGE = 20 V, VCE = 0 V
AC Characteristics Transconductance

gfs
3.5 5.5 1300 100 50 -

S pF 1750 150 75

VCE = 20 V, IC = 10 A
Input capacitance

Ciss Coss
-

VCE = 25 V, VGE = 0 V, f = 1 MHz

Output capacitance

VCE = 25 V, VGE = 0 V, f = 1 MHz

Reverse transfer capacitance

Crss
-

VCE = 25 V, VGE = 0 V, f = 1 MHz

Semiconductor Group

Dec-06-1995

BUP 203

Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Switching Characteristics, Inductive Load at Tj = 125 C Turn-on delay time td(on) Values typ. max. Unit

ns 40 60

VCC = 600 V, VGE = 15 V, IC = 10 A RGon = 47

Rise time -

tr
30 50

VCC = 600 V, VGE = 15 V, IC = 10 A RGon = 47

Turn-off delay time

td(off)
200 300

VCC = 600 V, VGE = -15 V, IC = 10 A RGoff = 47

Fall time

tf
20 30 mWs 1.3 -

VCC = 600 V, VGE = -15 V, IC = 10 A RGoff = 47

Total turn-off loss energy

Eoff

VCC = 600 V, VGE = -15 V, IC = 10 A RGoff = 47

Semiconductor Group

Dec-06-1995

BUP 203

Power dissipation Ptot = (TC) parameter: Tj 150 C

170 W 140

Collector current IC = (TC) parameter: VGE 15 V , Tj 150 C

24 A 20

Ptot

IC

18 16

120 100

14 12 10

80 60 40

8 6 4

20 2 0 0 20 40 60 80 100 120 C 160 0 0 20 40 60 80 100 120 C 160

TC

TC

Safe operating area IC = (VCE) parameter: D = 0, TC = 25C , Tj 150 C

10 2
t = 16.0s p

Transient thermal impedance Zth JC = (tp) parameter: D = tp / T

10 0

IGBT

K/W

IC
10 1

ZthJC
10 -1

100 s

D = 0.50
1 ms

0.20 10
-2

10

0.10 0.05

10 ms

single pulse

0.02 0.01

DC 10 -1 0 10 10
1

10

V 10

10 -3 -5 10

10

-4

10

-3

10

-2

10

-1

s 10

VCE

tp

Semiconductor Group

Dec-06-1995

BUP 203

Typ. output characteristics

Typ. transfer characteristics

IC = f(VCE)
parameter: tp = 80 s, Tj = 125 C

IC = f (VGE)
parameter: tP = 80 s, VCE = 20 V, Tj = 25 C

Typ. saturation characteristics

Typ. saturation characteristics

VCE(sat) = f (VGE)
parameter: Tj = 25 C

VCE(sat) = f (VGE)
parameter: Tj = 125 C

Semiconductor Group

Dec-06-1995

BUP 203

Typ. gate charge VGE = (QGate) parameter: IC puls = 10 A

20 V

Typ. capacitances

C = f (VCE)
parameter: VGE = 0 V, f = 1 MHz

VGE

16

400 V
14 12 10 8 6 4 2 0 0 20 40 60 80 100

800 V

nC

130

Q Gate

Typ. switching time

t = f (RG), inductive load, Tj = 125 C

parameter: VCE = 600 V, VGE = 15 V, IC = 10 A

Semiconductor Group

Dec-06-1995

BUP 203

Package Outlines Dimensions in mm Weight: 8 g

Semiconductor Group

Dec-06-1995

This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.