BSM 400 GA 120 DL

IGBT Power Module

Preliminary data
Low Loss IGBT
Low inductance single switch
Including fast free- wheeling diodes
Package with insulated metal base plate
Type

VCE

IC

BSM 400 GA 120 DL

1200V 680A

Package

Ordering Code

SINGLE SWITCH

C67076-A2302-A70

Maximum Ratings
Parameter

Symbol

Collector-emitter voltage

VCE

Collector-gate voltage

VCGR

RGE = 20 k

Values
1200

Unit
V

1200

Gate-emitter voltage

VGE

DC collector current

IC

20
A

TC = 25 C

680

TC = 80 C

400

Pulsed collector current, tp = 1 ms

ICpuls

TC = 25 C

1360

TC = 125 C

800

Ptot

Power dissipation per IGBT

TC = 25 C

W
2700

Chip temperature

Tj

Storage temperature

Tstg

Thermal resistance, chip case

RthJC

0.045

Diode thermal resistance, chip case

RthJCD

0.09

Insulation test voltage, t = 1min.

Vis

Creepage distance

+ 150

-40 ... + 125

K/W

2500

Vac

20

mm

Clearance

11

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

Semiconductor Group

sec

40 / 125 / 56

Feb-14-1997

BSM 400 GA 120 DL

Electrical Characteristics, at Tj = 25 C, unless otherwise specified

Parameter

Symbol

Values
min.

typ.

Unit
max.

Static Characteristics
Gate threshold voltage

VGE(th)

VGE = VCE, IC = 16 mA

V
4.5

5.5

6.5

VGE = 15 V, IC = 400 A, Tj = 25 C

2.2

2.6

VGE = 15 V, IC = 400 A, Tj = 125 C

2.5

Collector-emitter saturation voltage

Zero gate voltage collector current

VCE(sat)

ICES

mA

VCE = 1200 V, VGE = 0 V, Tj = 25 C

15

VCE = 1200 V, VGE = 0 V, Tj = 125 C

Gate-emitter leakage current

IGES

VGE = 20 V, VCE = 0 V

nA
-

400

AC Characteristics
Transconductance

gfs

VCE = 20 V, IC = 400 A
Input capacitance

nF
-

26

Crss

VCE = 25 V, VGE = 0 V, f = 1 MHz

Semiconductor Group

Coss

VCE = 25 V, VGE = 0 V, f = 1 MHz

Reverse transfer capacitance

Ciss

VCE = 25 V, VGE = 0 V, f = 1 MHz

Output capacitance

Feb-14-1997

BSM 400 GA 120 DL

Electrical Characteristics, at Tj = 25 C, unless otherwise specified

Parameter

Symbol

Values
min.

typ.

Unit
max.

Switching Characteristics, Inductive Load at Tj = 125 C

Turn-on delay time

td(on)

ns

VCC = 600 V, VGE = 15 V, IC = 400 A

RGon = 2.7
Rise time

300

170

900

100

tr

VCC = 600 V, VGE = 15 V, IC = 400 A

RGon = 2.7
Turn-off delay time

td(off)

VCC = 600 V, VGE = -15 V, IC = 400 A

RGoff = 2.7
Fall time

tf

VCC = 600 V, VGE = -15 V, IC = 400 A

RGoff = 2.7
Free-Wheel Diode
Diode forward voltage

VF

IF = 400 A, VGE = 0 V, Tj = 25 C

2.3

2.8

IF = 400 A, VGE = 0 V, Tj = 125 C

1.8

Reverse recovery time

trr

IF = 400 A, VR = -600 V, VGE = 0 V

diF/dt = -3000 A/s, Tj = 125 C
Reverse recovery charge

0.6

Qrr

IF = 400 A, VR = -600 V, VGE = 0 V

diF/dt = -3000 A/s
Tj = 25 C

16

Tj = 125 C

45

Semiconductor Group

Feb-14-1997

BSM 400 GA 120 DL

Power dissipation
Ptot = (TC)
parameter: Tj 150 C

Safe operating area

IC = (VCE)
parameter: D = 0, TC = 25C , Tj 150 C
10 4

2800
W

2400

Ptot

tp = 21.0s

IC

2200

10 3

2000
1800

100 s

1600
10 2

1400
1200

1 ms

1000
800

10 1

10 ms

600
400
200
0
0

DC
10
20

40

60

80

100

120

160

10

10

10

10

TC

Collector current
IC = (TC)
parameter: VGE 15 V , Tj 150 C

Transient thermal impedance

Zth JC = (tp)
parameter: D = tp / T

IGBT

10 0

700

K/W

A
600

IC

VCE

ZthJC

550

10 -1

500
450

10 -2

400
350

D = 0.50

300

10

-3

0.20

250

0.10

200

0.05
10 -4

150

0.02
single pulse

0.01

100
50
0
0

20

40

60

80

100

120

160

TC

Semiconductor Group

10 -5
-5
10

10

-4

10

-3

10

-2

10

-1

s 10

tp

Feb-14-1997

BSM 400 GA 120 DL

Typ. output characteristics

Typ. output characteristics

IC = f (VCE)

IC = f (VCE)

parameter: tp = 80 s, Tj = 25 C

parameter: tp = 80 s, Tj = 125 C

800

IC

600

800

17V
15V
13V
11V
9V
7V

IC

600

500

500

400

400

300

300

200

200

100

100

0
0

0
0

VCE

17V
15V
13V
11V
9V
7V

VCE

Typ. transfer characteristics

IC = f (VGE)
parameter: tp = 80 s, VCE = 20 V
800

IC

600

500

400

300

200

100
0
0

Semiconductor Group

10

V
14
VGE

Feb-14-1997

BSM 400 GA 120 DL

Typ. capacitances

Typ. gate charge

VGE = (QGate)
parameter: IC puls = 400 A

C = f (VCE)
parameter: VGE = 0 V, f = 1 MHz
10 2

20
V

nF

VGE

16

Ciss

600 V

14

800 V

10 1

12
Coss

10

Crss

8
10 0
6
4
2
0
0

400

800

1200

1600

2000

nC

10 -1
0

2800

10

15

20

25

30

V
40
VCE

QGate

Reverse biased safe operating area

Short circuit safe operating area

ICpuls = f(VCE) , Tj = 150C

parameter: VGE = 15 V

ICsc = f(VCE) , Tj = 150C

parameter: VGE = 15 V, tSC 10 s, L < 20 nH

2.5

12

ICpuls/IC

ICsc/IC
di/dt = 1000A/s
3000A/s
5000A/s

8
1.5
6
1.0
4

allowed number of
short circuit: <1000
time between short
2 circuit: >1s

0.5

0.0

0
0

200

400

Semiconductor Group

600

800

1000 1200

V
1600
VCE

200

400

600

800

1000 1200

V
1600
VCE

Feb-14-1997

BSM 400 GA 120 DL

Typ. switching time

Typ. switching time

I = f (IC) , inductive load , Tj = 125C

t = f (RG) , inductive load , Tj = 125C

par.: VCE = 600 V, VGE = 15 V, RG = 2.2

par.: VCE = 600 V, VGE = 15 V, IC = 400 A

10 4

10 4

ns

ns

tdoff

t
10 3

10 3
tdoff

tdon
tr

tr
tdon
tf

10 2

10 1
0

100 200 300 400 500 600 700

tf
10 2

10 1
0

900

10

15

20

IC

30

RG

Typ. switching losses

Typ. switching losses

E = f (IC) , inductive load , Tj = 125C

E = f (RG) , inductive load , Tj = 125C

par.: VCE = 600 V, VGE = 15 V, RG = 2.2

par.: VCE = 600V, VGE = 15 V, IC = 400 A

250

250

Eon
E

mWs

150

mWs

150
Eoff
Eon
Eoff

100

100

50

50

0
0

100 200 300 400 500 600 700

900

IC

Semiconductor Group

0
0

10

15

20

30

RG

Feb-14-1997

BSM 400 GA 120 DL

Forward characteristics of fast recovery

Transient thermal impedance

Zth JC = (tp)
parameter: D = tp / T

reverse diode IF = f(VF)

parameter: Tj

Diode

10 0

800

K/W
A

IF

ZthJC

600

500

10 -1

10 -2

Tj=125C

Tj=25C

400

D = 0.50
10 -3

0.20

300

0.10
0.05

200
10

0.02

-4

single pulse

0.01

100
0
0.0

0.5

1.0

1.5

2.0

3.0

10

-4

10

-3

10

-2

10

-1

s 10

tp

VF

Semiconductor Group

10 -5
-5
10

Feb-14-1997

BSM 400 GA 120 DL

Circuit Diagram

Package Outlines
Dimensions in mm
Weight: 420 g

Semiconductor Group

Feb-14-1997