SKM200GAH123DKL

August 2011 PRELIMINARY 1200V 200A CHOPPER Module RoHS Compliant

FEATURES
Ultra Low Loss High Ruggedness High Short Circuit Capability VCE(sat) With Positive Temperature Coefficient With Fast Free-Wheeling Diodes

APPLICATIONS
AC and DC motor control AC servo and robot drives Power supplies Welding inverters

ABSOLUTE MAXIMUM RATINGS

Symbol IGBT-Inverter VCES VGES IC ICM Ptot Collector - Emitter Voltage Gate - Emitter Voltage DC Collector Current Repetitive Peak Collector Current Power Dissipation Per IGBT TC=25C TC=80C tp=1ms TVj=25C Parameter

TC=25C unless otherwise specified Test Conditions Values Unit

1200 20 300 200 400 1040

V V A A A W

Diode-Serial VRRM IF(AV) IFRM It Reverse-Diode VRRM IF(AV) IFRM I2 t Repetitive Reverse Voltage Average Forward Current Repetitive Peak Forward Current TVj=25C TC=25C TC=80C tp=1ms TVj =45C, t=10ms, VR=0V 1200 45 30 60 450 V A A A A2s
2

Repetitive Reverse Voltage Average Forward Current Repetitive Peak Forward Current

TVj=25C TC=25C TC=80C tp=1ms TVj =45C, t=10ms, VR=0V

1200 300 200 400 15312

V A A A A2s

MacMic Science & Technology Co., Ltd.

Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022

Version: 1 Websitewww.macmicst.com

Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China

SKM200GAH123DKL ELECTRICAL AND THERMAL CHARACTERISTICS

Symbol IGBT-Inverter VGE(th) VCE(sat) Gate - Emitter Threshold Voltage Collector - Emitter Saturation Voltage Collector Leakage Current Gate Leakage Current Gate Charge Input Capacitance Reverse Transfer Capacitance Turn - on Delay Time VCE=VGE, IC=8mA IC=200A, VGE=15V, TVj=25C IC=200A, VGE=15V, TVj=125C VCE=1200V, VGE=0V, TVj=25C VCE=1200V, VGE=0V, TVj=125C VCE=0V,VGE15V, TVj=125C VCE=600V, IC=200A , VGE=15V VCE=25V, VGE=0V, f =1MHz VCC=600V,IC=200A, RG =5.1, VGE=15V, Inductive Load VCC=600V,IC=200A, RG =5.1, VGE=15V, Inductive Load VCC=600V,IC=200A, RG =5.1, VGE=15V, Inductive Load TVj =25C TVj =125C TVj =25C TVj =125C TVj =25C TVj =125C TVj =25C TVj =125C TVj =25C TVj =125C TVj =25C TVj =125C -400 2.1 14.9 0.7 130 140 65 65 430 500 65 80 17.2 24.8 13.6 21.6 900 0.12 5.2 6 1.8 2.0 1 10 400 7 V V V mA mA nA C nF nF ns ns ns ns ns ns ns ns mJ mJ mJ mJ A K /W Parameter Test Conditions TC=25C unless otherwise specified Min. Typ. Max. Unit

ICES IGES Qge Cies Cres td(on)

tr

Rise Time

td(off)

Turn - off Delay Time

tf

Fall Time

Eon

Turn - on Energy

Eoff

Turn - off Energy

ISC RthJC

Short Circuit Current

tpsc10S , VGE=15V, TVj=150C VCC=900V, VCEMCHIP1200V Per IGBT

Junction-to-Case Thermal Resistance

Diode-Serial VF IRRM Qrr Erec RthJCD Forward Voltage Max. Reverse Recovery Current Reverse Recovery Charge Reverse Recovery Energy IF=200A , VGE=0V, TVj =25C IF=200A , VGE=0V, TVj =125C IF=200A , VR=600V diF/dt=-2400A/s TVj =125C Per Diode 1.95 1.95 155 17.5 8.5 0.25 V V A C mJ K /W

Junction-to-Case Thermal Resistance

Reverse-Diode VF IRRM Qrr RthJCD Forward Voltage Max. Reverse Recovery Current Reverse Recovery Charge IF=30A , VGE=0V, TVj =25C IF=30A , VGE=0V, TVj =125C IF=30A , VR=600V diF/dt=-1000A/sTVj =125C Per Diode 1.53 1.52 60 5.5 1.0 V V A C K /W -2-

Junction-to-Case Thermal Resistance

SKM200GAH123DKL MODULE CHARACTERISTICS

Symbol TVj max TVj op Tstg Visol Md Weight Parameter Max. Junction Temperature Operating Temperature Storage Temperature Insulation Test Voltage Mounting Torque AC, t=1min RecommendedM6 3 300 -40 -40 3000 5 TC=25C unless otherwise specified Test Conditions Min. Typ. Max. 150 125 125 Unit C C C V Nm g

400
VGE=15V

400

320

TVj=25C

320 240
TVj=125C

IC (A)

TVj =125C

IC (A) 5.0

240

160

160

80 0

80 0

1.0

2.0

3.0

4.0

VCEV Figure1. Typical Output characteristics IGBT-Inverter 400

VCE =20V

VCEV Figure2. Typical Output characteristics IGBT-Inverter 80

320 60 IC (A) 240 Eon Eoff (mJ) TVj =25C

VCC=600V IC=200A VGE=15V TVj =125C

40

Eon

160

TVj =125C

80 0 6

20

Eoff

10

11

12

13

10

15

20

VGEV Figure3. Typical Transfer characteristics IGBT-Inverter

RG Figure4. Switching Energy vs. Gate Resistor IGBT-Inverter

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SKM200GAH123DKL
100
VCC=600V RG=5.1 VGE=15V TVj =125C

100
VGE =0V f=1MHz Cies

80 Eon Eoff (mJ)

60

10
Eon

40
Eoff

C (nF)

Coes

1
Cres

20

50 100 150 200 250 300 350 400

0 0 5 10 15 20 25 30 35 VCEV Figure6. Typical Capacitances vs. VCE IGBT-Inverter

ICA Figure5. Switching Energy vs. Collector Current IGBT-Inverter

VCC=600V

400 350 300

15

VGE (V)

10

VCC=800V

ICpuls (A)

250 200 150 100 50

TVj=125C VGE =15V

IC=200A TVj =25C

400

800

1200

1600

2000

0 600 800 1000 1200 1400 VCEV Figure8. Reverse Biased Safe Operating Area IGBT-Inverter 200 400 25
RG=5.1 VCE=600V TVj =125C

QgnC Figure7. Gate Charge characteristics IGBT-Inverter 400

300

20
TVj =25C

15 IF (A) 200
TVj =125C

Erec (mJ) 4.0

10

100

5 0 0 100 200 300 400 IF (A) Figure10. Switching Energy vs. IF Diode-Serial -4-

0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VFV Figure9. Diode Forward Characteristics Diode-Serial

SKM200GAH123DKL
60 50 40 ZthJC (K/W) 30
TVj =125C

Diode-Serial

IF (A)

0.1

IGBT-Inverter

20 10 0 0 0.5 1.0 1.5 2.0 2.5 VFV Figure11. Diode Forward Characteristics Reverse-Diode
TVj =25C

0.01 0.001

0.01

0.1

10

Rectangular Pulse Duration (seconds) Figure12. Transient Thermal Impedance

Figure13. Circuit Diagram

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SKM200GAH123DKL

Dimensions (mm) Figure14. Package Outline

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