CM300DY-24H

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272

Dual IGBTMOD H-Series Module

300 Amperes/1200 Volts

A B M P - DIA. (4 TYP.)

C2E1

E2

C1

E2 C2

R L D

F
C1 E1

G S - M6 THD. (3 TYP) N K K

H .110 TAB Q

N K

J N

E2

Description: Powerex IGBTMOD Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery (135ns) Free-Wheel Diode High Frequency Operation (20-25kHz) Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Motion/Servo Control UPS Welding Power Supplies Laser Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM300DY-24H is a 1200V (VCES), 300 Ampere Dual IGBTMOD Power Module.
Type CM Current Rating Amperes 300 VCES Volts (x 50) 24

C2E1

E2

C1

Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J Inches 4.33 3.661 0.01 3.15 2.441 0.01 1.18 Max. 1.18 0.98 0.85 0.83 Millimeters 110.0 93.0 0.25 80.0 62.0 0.25 30.0 Max. 30.0 25.0 21.5 21.2 Dimensions K L M N P Q R S Inches 0.71 0.59 0.55 0.28 0.26 Dia. 0.33 0.24 M6 Metric Millimeters 18.0 15.0 14.0 7.0 Dia. 6.5 8.5 6.0 M6

C1

E1

C2

273

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM300DY-24H Dual IGBTMOD H-Series Module 300 Amperes/1200 Volts

Absolute Maximum Ratings, Tj = 25 C unless otherwise specified

Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage Collector Current Peak Collector Current Diode Forward Current Diode Forward Surge Current Power Dissipation Max. Mounting Torque M6 Terminal Screws Max. Mounting Torque M6 Mounting Screws Module Weight (Typical) V Isolation
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.

Symbol Tj Tstg VCES VGES IC ICM IF IFM Pd VRMS

CM300DY-24H 40 to 150 40 to 125 1200 20 300 600* 300 600* 2100 26 26 500 2500

Units C C Volts Volts Amperes Amperes Amperes Amperes Watts in-lb in-lb Grams Volts

Static Electrical Characteristics, Tj = 25 C unless otherwise specified

Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VFM Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 30mA, VCE = 10V IC = 300A, VGE = 15V IC = 300A, VGE = 15V, Tj = 150C Total Gate Charge Diode Forward Voltage VCC = 600V, IC = 300A, VGS = 15V IE = 300A, VGS = 0V Min. 4.5 Typ. 6.0 2.5 2.25 1500 Max. 1.0 0.5 7.5 3.4** 3.5 Units mA

A
Volts Volts Volts nC Volts

** Pulse width and repetition rate should be such that device junction temperature rise is negligible.

Dynamic Electrical Characteristics, Tj = 25 C unless otherwise specified

Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switching Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr IE = 300A, diE/dt = 600A/s IE = 300A, diE/dt = 600A/s VCC = 600V, IC = 300A, VGE1 = VGE2 = 15V, RG = 1.0 VGE = 0V, VCE = 10V, f = MHz Test Conditions Min. Typ. 2.23 Max. 60 21 12 250 500 350 350 250 Units nF nF nF ns ns ns ns ns

Diode Reverse Recovery Time Diode Reverse Recovery Charge

Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified

Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions Per IGBT Per FWDi Per Module, Thermal Grease Applied Min. Typ. Max. 0.06 0.12 0.035 Units C/W C/W C/W

274

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM300DY-24H Dual IGBTMOD H-Series Module 300 Amperes/1200 Volts

OUTPUT CHARACTERISTICS (TYPICAL)

TRANSFER CHARACTERISTICS (TYPICAL)

COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)

600
COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES)

600
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)

VGE = 20V

15

5
VCE = 10V Tj = 25C Tj = 125C VGE = 15V Tj = 25C Tj = 125C

12

480
Tj = 25oC 11

480

360
10

360

240

240

120
7

9 8

120

0 0 2 4 6 8 10
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

0 0 4 8 12 16 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)

0 0 120 240 360 480 600

COLLECTOR-CURRENT, IC, (AMPERES)

COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)

FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL)

CAPACITANCE VS. VCE (TYPICAL)

10
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)

103
Tj = 25C Tj = 25C IC = 600A
EMITTER CURRENT, IE, (AMPERES) CAPACITANCE, Cies, Coes, Cres, (nF)

102
Cies

101

Coes

IC = 300A

102

Cres

100

2
IC = 120A

VGE = 0V f = 1MHz

0 0 4 8 12 16 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)

101 0 0.8 1.6 2.4 3.2 4.0

EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)

10-1 10-1

100

101

102

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL)

REVERSE RECOVERY CHARACTERISTICS (TYPICAL)

REVERSE RECOVERY CURRENT, Irr, (AMPERES)

GATE CHARGE, VGE

103
td(off)
REVERSE RECOVERY TIME, t rr, (ns)

103

102

20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)

IC = 300A

SWITCHING TIME, (ns)

tf td(on)

16

Irr

VCC = 400V VCC = 600V

102

102

t rr

12

101

tr

VCC = 600V VGE = 15V R G = 1 Tj = 125C

di/dt = -600A/sec Tj = 25C

101 101

102
COLLECTOR CURRENT, IC, (AMPERES)

103

101 101

102
EMITTER CURRENT, IE, (AMPERES)

100 103

0 0 600 1200 1800 2400

GATE CHARGE, QG, (nC)

275

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM300DY-24H Dual IGBTMOD H-Series Module 300 Amperes/1200 Volts

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth (NORMALIZED VALUE)

100

Single Pulse TC = 25C Per Unit Base = R th(j-c) = 0.06C/W

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth (NORMALIZED VALUE)

10-3 101

TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 10-1 100

101

10-3 101

TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100

101

100

Single Pulse TC = 25C Per Unit Base = R th(j-c) = 0.12C/W

10-1

10-1

10-1

10-1

10-2

10-2

10-2

10-2

10-3 10-5
TIME, (s)

10-4

10-3 10-3

10-3 10-5
TIME, (s)

10-4

10-3 10-3

276

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