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SEMICONDUCTOR TECHNICAL DATA

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Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode

Designer's

MGP11N60ED
IGBT & DIODE IN TO220 11 A @ 90C 15 A @ 25C 600 VOLTS SHORT CIRCUIT RATED LOW ONVOLTAGE

NChannel EnhancementMode Silicon Gate

This Insulated Gate Bipolar Transistor (IGBT) is copackaged with a soft recovery ultrafast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltageblocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on). It also provides fast switching characteristics and results in efficient operation at high frequencies. Copackaged IGBTs save space, reduce assembly time and cost. This new Eseries introduces an energy efficient, ESD protected, and rugged short circuit device. Industry Standard TO220 Package High Speed: Eoff = 60 mJ per Amp typical at 125C High Voltage Short Circuit Capability 10 ms minimum at 125C, 400 V Low OnVoltage 2.0 V typical at 8.0 A Soft Recovery Free Wheeling Diode is included in the Package Robust High Voltage Termination ESD Protection GateEmitter Zener Diodes

G G C E CASE 221A09 STYLE 9 TO220AB E

MAXIMUM RATINGS (TJ = 25C unless otherwise noted)

Rating CollectorEmitter Voltage CollectorGate Voltage (RGE = 1.0 M) GateEmitter Voltage Continuous Collector Current Continuous @ TC = 25C Continuous @ TC = 90C Repetitive Pulsed Current (1) Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Short Circuit Withstand Time (VCC = 400 Vdc, VGE = 15 Vdc, TJ = 125C, RG = 20 ) Thermal Resistance Junction to Case IGBT Junction to Case Diode Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 5 seconds Mounting Torque, 632 or M3 screw (1) Pulse width is limited by maximum junction temperature. Repetitive rating.
Designers Data for Worst Case Conditions The Designers Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves representing boundaries on device characteristics are given to facilitate worst case design.

Symbol VCES VCGR VGE IC25 IC90 ICM PD TJ, Tstg tsc RJC RJC RJA TL

Value 600 600 20 15 11 22 96 0.77 55 to 150 10 1.3 2.3 65 260 10 lbfSin (1.13 NSm)

Unit Vdc Vdc Vdc Adc Apk Watts W/C C

ms
C/W

Designers is a trademark of Motorola, Inc.

Motorola IGBT Device Motorola, Inc. 1998

Data

MGP11N60ED
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS CollectortoEmitter Breakdown Voltage (VGE = 0 Vdc, IC = 250 Adc) Temperature Coefficient (Positive) Zero Gate Voltage Collector Current (VCE = 600 Vdc, VGE = 0 Vdc) (VCE = 600 Vdc, VGE = 0 Vdc, TJ = 125C) GateBody Leakage Current (VGE = 20 Vdc, VCE = 0 Vdc) ON CHARACTERISTICS (1) CollectortoEmitter OnState Voltage (VGE = 15 Vdc, IC = 4.0 Adc) (VGE = 15 Vdc, IC = 4.0 Adc, TJ = 125C) (VGE = 15 Vdc, IC = 8.0 Adc) Gate Threshold Voltage (VCE = VGE, IC = 1.0 mAdc) Threshold Temperature Coefficient (Negative) Forward Transconductance (VCE = 10 Vdc, IC = 8.0 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (1) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time TurnOff Switching Loss TurnOn Switching Loss Total Switching Loss TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time TurnOff Switching Loss TurnOn Switching Loss Total Switching Loss Gate Charge (VCC = 360 Vdc, IC = 8 0 Adc Vdc 8.0 Adc, VGE = 15 Vdc) DIODE CHARACTERISTICS Diode Forward Voltage Drop (IEC = 3.25 Adc) (IEC = 3.25 Adc, TJ = 125C) (IEC = 6.5 Adc) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. VFEC 1.7 1.63 1.24 2.0 2.3 (continued) Vdc (VCC = 360 Vdc, IC = 8 0 Ad Vd 8.0 Adc, VGE = 15 Vdc, L = 300 mH Vd RG = 20 , TJ = 125C) 125 C) Energy losses include tail (VCC = 360 Vdc, IC = 8 0 Ad Vd 8.0 Adc, VGE = 15 Vdc, L = 300 mH Vd H, RG = 20 ) Energy losses include tail td(on) tr td(off) tf Eoff Eon Ets td(on) tr td(off) tf Eoff Eon Ets QT Q1 Q2 46 34 102 226 0.32 0.11 0.43 42 26 214 228 0.48 0.16 0.64 39.2 8.7 17.4 0.40 nC mJ ns mJ ns (VCE = 25 Vdc, VGE = 0 Vdc, Vdc Vdc f = 1.0 MHz) Cies Coes Cres 779 81 13 pF VCE(on) VGE(th) 4.0 gfe 6.0 10 3.5 8.0 1.6 1.5 2.0 1.9 2.4 Vdc mV/C Mhos Vdc V(BR)CES 600 ICES IGES 10 200 50 Adc 870 Vdc mV/C Adc Symbol Min Typ Max Unit

Motorola IGBT Device Data

MGP11N60ED
ELECTRICAL CHARACTERISTICS continued (TJ = 25C unless otherwise noted)
Characteristic DIODE CHARACTERISTICS continued Reverse Recovery Time ( (IF = 8 0 Ad , VR = 360 Vdc, 8.0 Adc, Vd , dIF/dt = 200 A/s) Reverse Recovery Stored Charge Reverse Recovery Time ( (IF = 8 0 Ad , VR = 360 Vdc, 8.0 Adc, Vd , dIF/dt = 200 A/s, TJ = 125C) Reverse Recovery Stored Charge INTERNAL PACKAGE INDUCTANCE Internal Emitter Inductance (Measured from the emitter lead 0.25 from package to emitter bond pad) 25 IC , COLLECTOR CURRENT (AMPS) TJ = 25C 20 20 V 15 V 25 20 V IC , COLLECTOR CURRENT (AMPS) 12.5 V 17.5 V 20 15 V 12.5 V LE 7.5 nH trr ta tb QRR trr ta tb QRR 57 18 39 107 91 28 63 275 C C ns ns Symbol Min Typ Max Unit

17.5 V

15 VGE = 10 V 10

15 VGE = 10 V 10

5 0 0 2 4 6 8 VCE, COLLECTORTOEMITTER VOLTAGE (VOLTS)

5 TJ = 125C 0 0 2 4 6 8 VCE, COLLECTORTOEMITTER VOLTAGE (VOLTS)

Figure 1. Output Characteristics

Figure 2. Output Characteristics

VCE , COLLECTORTOEMITTER VOLTAGE (VOLTS)

24 IC , COLLECTOR CURRENT (AMPS) 20 16 12 8 TJ = 125C 4 25C 0 5 7 9 11 13 15 17 VGE, GATETOEMITTER VOLTAGE (VOLTS) VCE = 100 V 5 ms PULSE WIDTH

2.25 VGE = 15 V 80 ms PULSE WIDTH 2.05 IC = 8.0 A

1.85

6.0 A

1.65

4.0 A

1.45 50 25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C)

Figure 3. Transfer Characteristics

Figure 4. CollectorToEmitter Saturation Voltage versus Junction Temperature

Motorola IGBT Device Data

MGP11N60ED
TJ = 25C VGE = 0 V Cies 800 VGE, GATETOEMITTER VOLTAGE (VOLTS) 20

1600 C, CAPACITANCE (pF)

16

QT

12 Q1 8 TJ = 25C VCC = 300 V IC = 8.0 A Q2

Coes Cres

4 0 0 10 20 30

0 0 5 10 15 20 25 VCE, COLLECTORTOEMITTER VOLTAGE (VOLTS)

40

50

Qg, TOTAL GATE CHARGE (nC)

Figure 5. Capacitance Variation

Figure 6. GateToEmitter Voltage versus Total Charge

0.8 ETS , TOTAL ENERGY LOSSES (mJ)

0.85 ETS , TOTAL ENERGY LOSSES (mJ) 0.75 0.65 6.0 A 0.55 0.45 0.35 0.25 0.15 5 15 25 35 45 55 RG, GATE RESISTANCE (OHMS) 4.0 A TJ = 125C VDD = 360 V VGE = 15 V IC = 8.0 A

0.7 0.6 0.5 0.4 0.3 0.2 0.1 0

VCC = 360 V VGE = 15 V RG = 20 W

IC = 8.0 A 6.0 A

4.0 A

50

25

25

50

75

100

125

150

TJ, JUNCTION TEMPERATURE (C)

Figure 7. Total Energy Losses versus Gate Resistance

Figure 8. Total Energy Losses versus Junction Temperature

0.9 ETS , TOTAL ENERGY LOSSES (mJ) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0

0.6 Eoff , TURNOFF ENERGY LOSSES (mJ) TJ = 125C VCC = 360 V VGE = 15 V RG = 20 W TJ = 125C VDD = 360 V VGE = 15 V IC = 8.0 A

0.5

0.4

6.0 A

0.3

4.0 A

0.2 2 4 6 8 10 5 15 25 35 45 IC, COLLECTOR CURRENT (AMPS) RG, GATE RESISTANCE (OHMS)

Figure 9. Total Energy Losses versus Collector Current

Figure 10. TurnOff Losses versus Gate Resistance

Motorola IGBT Device Data

MGP11N60ED
Eoff , TURNOFF ENERGY LOSSES (mJ) 0.6 Eoff , TURNOFF ENERGY LOSSES (mJ) VCC = 360 V VGE = 15 V RG = 20 W IC = 8.0 A 0.4 6.0 A 0.6 TJ = 125C VCC = 360 V VGE = 15 V RG = 20 W

0.4

0.2

4.0 A

0.2

0 50 25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C)

0 0 2 4 6 8 10 IC, COLLECTOR CURRENT (AMPS)

Figure 11. TurnOff Losses versus Junction Temperature

100 IF , INSTANTANEOUS FORWARD CURRENT (AMPS) IC , COLLECTOR CURRENT (AMPS)

Figure 12. TurnOff Losses versus Collector Current

100

TJ = 125C 10

25C

10 TJ = 125C RGE = 20 W VGE = 15 V 1

1 0.5 1.0 1.5 2.0 2.5 3.0 VFEC, EMITTERTOCOLLECTOR VOLTAGE (VOLTS)

10

100

1000

VCE, COLLECTORTOEMITTER VOLTAGE (VOLTS)

Figure 13. Forward Characteristics versus Current

Figure 14. Reverse Biased Safe Operating Area

Motorola IGBT Device Data

MGP11N60ED
PACKAGE DIMENSIONS

T B
4

SEATING PLANE

F T S

NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 0.080 STYLE 9: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 2.04

Q
1 2 3

A U K

H Z L V G D N R J

CASE 221A09 TO220AB ISSUE Z

GATE COLLECTOR EMITTER COLLECTOR

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MGP11N60ED/D Motorola IGBT Device Data