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  • 47-3004 - Lei Cao

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    This document proposes developing an understanding of how gallium nitride (GaN) semiconductor properties and electronic response are affected by high temperature and intense neutron radiation. The proposal involves: 1) studying GaN device electronic properties like current-voltage characteristics in-situ during high temperature neutron beam exposure; 2) highly irradiating GaN with neutrons and evaluating performance offline; and 3) simulating experiments and validating models with data to design a small, reliable GaN neutron sensor that withstands high neutron fluence and temperature for nuclear reactor applications.

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    47-3004_Lei Cao

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    This document proposes developing an understanding of how gallium nitride (GaN) semiconductor properties and electronic response are affected by high temperature and intense neutron radiation. The proposal involves: 1) studying GaN device electronic properties like current-voltage characteristics in-situ during high temperature neutron beam exposure; 2) highly irradiating GaN with neutrons and evaluating performance offline; and 3) simulating experiments and validating models with data to design a small, reliable GaN neutron sensor that withstands high neutron fluence and temperature for nuclear reactor applications.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
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    12 views1 page

    47-3004 - Lei Cao

    Uploaded by

    kazmi81
    This document proposes developing an understanding of how gallium nitride (GaN) semiconductor properties and electronic response are affected by high temperature and intense neutron radiation. The proposal involves: 1) studying GaN device electronic properties like current-voltage characteristics in-situ during high temperature neutron beam exposure; 2) highly irradiating GaN with neutrons and evaluating performance offline; and 3) simulating experiments and validating models with data to design a small, reliable GaN neutron sensor that withstands high neutron fluence and temperature for nuclear reactor applications.

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    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
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    of 1

    A High Temperature-tolerant and Radiation-resistant In-core Neutron Sensor for Advanced Reactors

    PI: Dr. Lei Cao, Dr. Don Miller The Ohio State University Program: MS-NT3

    Collaborators: N/A

    ABSTRACT:

    The objective of this proposal is to develop an understanding of the fundamental materials properties and electronic response of a gallium nitride (GaN) semiconductor device in an environment of high temperature and intense neutron field. Since the electronic properties of GaN are intertwined with as-grown defects, neutron-induced damage, and high temperature, an in-situ study scheme is the key. We propose: 1) an in-situ study of electronic properties of GaN device such as I-V, leakage current, and charge collection efficiency (CCE) in high temperature using an external neutron beam; 2) an in-core irradiation of GaN up to the highest yet fast neutron fluence and an off-line performance evaluation; and 3) a simulation for guiding the experiments and a validation of the model using experimental data. Based on the results of this study, a small and reliable GaN neutron sensor will be fabricated with the goals of withstanding high neutron fluence and high temperature (800 C), isolating gamma background, and operating in a wide dynamic range. Such a device has broad applications in light water small modular reactors and high temperature reactors either as an in-core or an ex-core neutron flux detector.

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