Veermata Jijabai Technological

Institute

Presentation on
“ SPINTRONICS ”

Subject Incharge: Ms Priyanka Bendkoli

Presented By : Rutuja Nitin Gawande

Roll No.:192081008
OUTLINE
 Introduction
 Need of Spintronics
 Principle
 Spintronics Fabrication
 Comparison
 Applications
 Future Scope
 Conclusion
Introduction
Spintronics , also known as spin electronics, is the study
of the intrinsic spin of the electron and its associated
magnetic moment, in addition to its fundamental
electronic charge.

 Utilizes the Bizarre property

of spin of electron.

 It enhances the functionality ,

high speed and reduces the
power consumption .
Need of Spintronics

 Failure of Moore’s Law

 The Transistors
and other components have reached the nanoscale
dimensions and further reducing it would leads to
▪ Scorching Heat
▪ Quantum effects come into play
Principle
 Information is carried by orientation of spin rather than
charge.

 Spin can have one of the Two states relative to magnetic

field, “spin up” and “spin down”.

 The frequency and the erection of rotation depends on the

strength of magnetic field and characteristics of the material.

 Directional and coherent motion of electron spin circulates a

spin current which will carry or transport information and
control quantum spin in a spintronic device.
Spintronic Fabrication
 Spintronics devices involves two different
approaches for designing and manufactoring.

They are:
• GMR [Giant Magneto Resistance]:
• TMR [Tunnel Magneto Resistance]:
Giant Magneto Resistance(GMR)
   It is a quantum mechanical magneto resistance effect
observed in multilayers has alternating ferromagnetic and
non-magnetic conductive layers.

  The orientation of the magnetization in the ferromagnetic

layers strongly influences the resistance of the system
  (a) Parallel orientation : low resistance.
(b) Antiparallel orientation: high resistance.
Giant Magneto Resistance(GMR)
 Data on Hard disc drives is stored as a directed magnetic
field in the particles.

 Two variants of GMR have been applied in the devices:

1. Current in Plane(CIP):
 Electric Current Flows Parallel to the layers.
 Most commonly used in magnetic read heads.

2. Current Perpendicular to the Plane(CPP):

 Electric Current flows perpendicular to the layers.
 Basis for Tunnel Magneto Resistance (TMR)
Tunnel Magneto Resistance(TMR)

 It is a device where two ferromagnetic layers are separated by

a thin insulator layer and the electric current tunnels through
or flows in a direction perpendicular to the layers .

 It is similar to a GMR spin valve except

that a very thin insulator layer is
sandwiched between magnetic
layers instead of metal layer.
Comparison
ELECTRONICS SPINTRONICS
Based on properties of charge of the Based on intrinsic property spin of
electron electron
Classical Property Quantum Property
Materials : Conductors and Materials : Ferromagnetic materials
semiconductors
Power Failure Problem No power Failure Problem
“Boot up” problem No “Boot up ” problem
More power consumption and less Less power consumption and more
compact compact
Limited Speed High Speed
Challenges
 Transport of spin polarized carriers across relevant length
scales

 Combining techniques between the semiconductor and

magnetic Recording industry therefore manipulation of both
electron and nuclear spins on sufficiently fast time scales.

 There are difficulties in etching and patterning as well as in

integrating the magnetic material into a silicon process for
manufacturing MRAMs
Applications

 Magneto Resistance Random Access Memory(MRAM):it is used in

computers and uses magnetic hysteresis to store magneto resistance data and
to read data

 GMR sensors

 Spin Valve

 Creating Faster Computers

 Quantum Computers

 Magnetic Field sensors

 Racetrack memory: encodes information in the direction of magnetization

between the domain walls of a ferromagnetic metal wire.
Future Scope
 Using “spin effect” in transistors could be highly efficient and
to do more computation than traditional transistor in smaller
space.

 In optoelectronic communication, lasers and light emitting

diode could increases the data carrying capacity of light using
spin of electron

 Devices will be smaller in size, more versatile and more

robust than those currently made from circuit elements and
chips.
Conclusion
 The new field of Spintronics was born in the intersection of
magnetism, electronic transport, and optics. It has achieved
commercial success in some areas and in advancing toward
additional applications the rely on recent fundamental discoveries.
In less than twenty years, we have seen Spintronics increasing
considerably the capacity of our hard discs and getting ready to
enter the RAM of our computers or the microwave emitters of our
cell phones. Spintronics with semiconductor or molecules is very
promising too.

 Some of the advances that might be most helpful would be room

temperature demonstrations. Spintronics should take an important
place in the technology of our century.