A

PRESENTATION

ON

“SPINTRONICS”

Submitted in partial fulfilment of the requirement for the degree of

Bachelor of Engineering
In
Electronics and Communication Engineering

Guided By Presented By
Ms. Munmun Calla Ravina Bishnoi
20UECE7049
OVERVIEW
◦ Introduction
◦ Why we need Spintronics !
◦ History of Spintronics
◦ Basic Principle
◦ GMR
◦ Technology Description
◦ Current Research
◦ Applications
◦ Advantages and Disadvantages
◦ Future scope
◦ Conclusion
INTRODUCTION

o In conventional electronics, electron

charge is used for manipulation, storage
and transfer of information.
o Adding the spin degree of freedom
provides new effects, new capabilities
and new functionalities.
o Spintronics is a NANO technology which
deals with spin dependent properties of
an electron.
WHY WE NEED SPINTRONICS !

Failure of Moore’s Law :

• Moore’s Law states that the number of transistors on a
silicon chip will roughly double every eighteen months.
• But now the transistors & other components have reached
nanoscale dimension and further reducing the size would
lead to :
1. Scorching heat making the circuit inoperable.
2. Also Quantum effects come into play at nanoscale dimensions.
• So the size of transistors & other components cannot be
reduced further.
HISTORY OF SPINTRONICS
• 1998:
◦ Giant Magnetoresistive Effect (GME) discovered by Albert Fert in France
and Peter Gruenberg in Germany..
◦ First GMR (Giant magnetoresistive) Harddisk head introduced by IBM..
• 2007:
◦ New European Initiative To Develop Spintonics Computing Devices.
• 2009:
◦ Scientists prove the existance of a 'spin battery’.
• 2016:
◦ Researchers develop a low-current solid-state spintronic device.
◦ Researchers develop graphene-based room-temperature spin field-effect
transistor.
BASIC PRINCIPLE

◦ In Spintronics , information is carried by orientation of spin rather

than charge.
◦ Spin can assume one of the two states relative to the magnetic
field, called spin up or spin down.
◦ These states, spin up or spin down, can be used to represent ‘1’
and ‘0’ in binary logic.
◦ In certain spintronic materials, spin orientation can be used as
spintronic memory as these orientation do not change when
system is switched off.
GAINT MAGNETORESISTANCE (GMR)

◦ The basic GMR device consists of a layer of non -magnetic metal between
two magnetic layers.
◦ A current consisting of spin-up and spin-down electrons is passed
through the layers.
◦ Those oriented in the same direction as the electron spins in a magnetic layer
pass through quite easily while those oriented in the opposite direction are
scattered.
SPIN VALVES

◦ If the orientation of one of the magnetic layers be changed then the device will
act as a filter, or ‘spin valve’, letting through more electrons when the spin
orientations in the two layers are the same and fewer when orientations are
oppositely aligned.

◦ The electrical resistance of the device can therefore be changed dramatically.

TUNNEL MAGNETORESISTANCE (TMR)
◦ Tunnel Magnetoresistance (TMR) is a magnetoresistive
effect that occurs in a magnetic tunnel junction (MTJ),
which is a component consisting of two ferromagnets
separated by a thin insulator.

◦ Is similar to a GMR spin valve except that a very thin

insulator layer is sandwitched between magnetic layers
instead of metal layer.

◦ The difference in resistance between the spin-aligned

and nonaligned cases is much greater than for GMR
device – infact 1000 times higher than the standard
spin valve.
MRAM
◦ MRAM uses magnetic storage elements instead of electric material used in
conventional RAM.

◦ Tunnel junctions are used to read the information stored in Magnetoresistive

Random Access Memory, typically a”0” for zero point magnetization state and
“1” for antiparallel state.
CURRENT RESEARCH TRENDS

◦ Spin Photovoltaics
◦ Molecular Spintronics
◦ Transport in Spin Valve
◦ Spin Hall Measurements
◦ Spin Mechanics
◦ Spin based Neuromorphic Computations
◦ Spin based Smart Life
APPLICATIONS AREAS OF SPINTRONICS

◦ Quantum Computers
◦ PCB Defect Detection Using GMR
◦ GMR in Magnetic Recording
◦ Current Sensor Based on GMR
◦ Magneto-Logic Gates
◦ Spin Valve Sensors
ADVANTAGES OF SPINTRONICS

• Low power consumption.

• Less heat dissipation.

• Spintronic memory is non-volatile.

• Takes up lesser space on chip, thus more compact.

• Spin manipulation is faster , so greater read & write speed.

• Spintronics does not require unique and specialized semiconductors.

Common metals such as Fe, Al, Ag , etc. can be used.
• Spin lifetime is relatively long, on the order of nanoseconds.
DISADVANTAGES
◦ Controlling the spin for long distances.

◦ Combining techniques between the semiconductor and

magnetic recording industry.

◦ Difficult to inject and measure spin in silicon.

◦ Silicon causes electrons to lose their spin state.

FUTURE SCOPE
◦ In the creation of low power consuming devices
and gadgets.

◦ Creation of spin polarization through optical or

magnetic injection.

◦ Spin relaxation in metals and semiconductors.

◦ Spin-based quantum computation and electron

entanglement in different semiconductor devices.
CONCLUSION

◦ This technology will exploit the spin of the

electron and create new devices and circuits which
could be more beneficial in future by providing
devices like memories for data base accessing
with the speed of light.

◦ Moreover, these "spintronic" devices might lead to

quantum computers and quantum communication
based on electronic solid-state devices, thus
changing the perspective of information
technology in the 21st century.
THANK YOU!!