ANNAMACHARYA INSTITUTE OF TECHNOLOGY & SCIENCES: TIRUPATI

(AUTONOMOUS)
Approved By AICTE , Accredited by NAAC with ‘A’ Grade, Affiliated to JNTUA
DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

Technical Seminar Presentation

On
Spintronics

PRESENTED BY Under the Guidance of

V.SUSMITHA 19AK1A04G9 Mr.P.Praveen kumar, M.Tech[Ph.D]
Assistant Professor, Department of ECE
 CONTENTS
❖ Abstract
❖ Introduction
❖ Why we need Spintronics
❖ Principle
❖ Giant magnetoresistance(GMR)
❖ Tunnel magnetoresistance(TMR)
❖ Magetoresistive Random Access Memory(MRAM)
❖ Electronics V/S Spintronics
❖ Applications
❖ Advantages
❖ Disadvantages
❖ Future works

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 ABSTRACT

Investigations of the dynamics of spin-polarized electronic current

through and near materials with spin-dependent electronic structures
have created a rich new field dubbed “Spintronics”.

Figure : Spintronics
 INTRODUCTION
 Spintronics also known as spin electronics, is the study of the
intrinsic spin of the electron and its associated magnetic moment,in
addition to its fundamental electronic charge.Spintronics is an emerging
field of Nano scale electronics involving the detection and manipulation of
electron spin.Electron spins are exploited as a further degree of
freedom,with implications in the efficiency of data storage and transfer.

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 WHY WE NEED SPINTRONICS

Failure of Moore’s Law:

 Moore’s law states that the number of transistors on a silicon chip will
roughly double every eighteen months.
 But now the transistors & other components have reached nanoscale
dimensions and further reducing the size wouuld lead to:
1.Scorching heat making the circuit inoperable.
2.Also Quantum effects come into play at nanoscale dimensions.

 So the size of transistors &other components cannot be reduced further .

 PRINCIPLE

 In Spintronics, information is carried by orientation of spin rather than

charge.
 Spin can assume one of the two states relative to the magnetic field,called
spin up or spin down.
 These states,spin up or spin down can be used to represent ‘1’ and ‘0’ in
binary logic.
 In certain spintronic materials,spin orientation can be used as spintronic
memory as these orientation do not change when system is switched off.
 GAINT MAGNETORESISTANCE(GMR)

 The basic GMR device consists of a layer of non-magnetic material

between two magnetic layers.A current consisting of spin-up and spin-
down electronics is passed through the layers.
 Those oriented in the same direction as the electron spins in a magnetic
layer pass through quite easily while those oriented in opposite direction
are scattered.
 TUNNEL
MAGNETORESISTANCE(TMR)
 Tunnel magnetoresistance is a magnetoresistive effect that occurs in a
magnetic tunnel junction, which is a component consisting of two
ferromagnets seperated by a thin insulator.
 MAGNETORESISTIVE RANDOM ACCESS
MEMORY(MRAM)

 MRAM uses magnetic storage elements.

 The elements are mostly tunnel junctions formed from two ferromagnetic
plates, each of which can hold a magnetic fields seperated by a thin
insulating layer.
ELECTRONICS V/S SPINTRONICS
Electronics Spintronics
 Based on properties of charge of  Based on intrinsic property spin of
the electron. electron.
 Classical Mechanism  Quantum Mechanism
 Materials:Conductors and semi  Materials:Ferromagnetic materials
conductors  Two basic spin states: spin-up and
 Based on the number of charges. spin-down
 Speed is limited and power  Based on direction of spin and spin
dissipation is high. high coupling, high speed.
 APPLICATIONS

 In the field of mass-storage devices.

 Medical field to detect cancer.
 In the area of digital electronics.
 Tested in mass-storage components namely hard drives.
 ADVANTAGES

 Low power consumption.

 Less heat dissipation.
 Spintronic memory is non volatile.
 Takes up lesser space on chip,thus more compact.
 Spin manipulation is faster, so greater read & write speed.
 Spntronics does not require unique and speialized semiconductors.
Common metals such as Fe,Al,Ag,etc. can be used.

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 DISADVANTAGES

 Contolling the spin for long distances.

 Combining techniques between the semiconductor and magnetic
recording industry.
 Silicon causes electrons to lose their spin state.
 FUTURE WORKS

 Creation of spin polarization through optical or magnetic injection.

 Spin-polarized transport through semiconductor/superconductor
interfaces.
 Spin relaxation in metals and semiconductors.
 Spin-based devices such as PN junctions and amplifiers.
 Spin-based quantum computation and electron entanglement in different
semiconductor devices.
THANK YOU

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