TIP150, TIP151, TIP152 NPN SILICON POWER DARLINGTONS

Copyright 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997

q q q q q

80 W at 25C Case Temperature 7 A Continuous Collector Current 10 A Peak Collector Current Maximum VCE(sat) of 2 V at IC = 5 A ICEX(sus) 7 A at rated V(BR)CEO
B C E
1 2 3 TO-220 PACKAGE (TOP VIEW)

Pin 2 is in electrical contact with the mounting base.

MDTRACA

absolute maximum ratings at 25C case temperature (unless otherwise noted)

RATING TIP150 Collector-base voltage (IE = 0) TIP151 TIP152 TIP150 Collector-emitter voltage (IB = 0) Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25C case temperature (see Note 2) Continuous device dissipation at (or below) 25C free air temperature (see Note 3) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. This value applies for tp 5 ms, duty cycle 10%. 2. Derate linearly to 150C case temperature at the rate of 0.64 W/C. 3. Derate linearly to 150C free air temperature at the rate of 16 mW/C. TIP151 TIP152 V EBO IC ICM IB Ptot Ptot Tj Tstg TL VCEO VCBO SYMBOL VALUE 300 350 400 300 350 400 8 7 10 1.5 80 2 -65 to +150 -65 to +150 260 V A A A W W C C C V V UNIT

PRODUCT

INFORMATION

Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters.

TIP150, TIP151, TIP152 NPN SILICON POWER DARLINGTONS

JUNE 1973 - REVISED MARCH 1997

electrical characteristics at 25C case temperature

PARAMETER V (BR)CBO Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter cut-off current Collector-emitter sustaining current Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Parallel diode forward voltage Small signal forward current transfer ratio Small signal forward current transfer ratio Output capacitance IC = 1 mA TEST CONDITIONS TIP150 IE = 0 TIP151 TIP152 TIP150 IC = 10 mA (see Note 4) VCE = 300 V V CE = 350 V V CE = 400 V VCLAMP = V(BR)CEO VEB = VCE = V CE = V CE = IB = 8V 5V 5V 5V 10 mA IC = 0 IC = 2.5 A IC = IC = IC = IC = IC = IC = IC = IB = 0 IC = 0.5 A IC = 0.5 A IE = 0 5A 7A 1A 2A 5A 2A 5A (see Notes 4 and 5) (see Notes 4 and 5) f = 1 kHz f = 1 MHz f = 1 MHz 200 10 100 pF (see Notes 4 and 5) (see Notes 4 and 5) 150 50 15 1.5 1.5 2 2.2 2.3 3.5 V V V IB = 0 IB = 0 IB = 0 IB = 0 TIP151 TIP152 TIP150 TIP151 TIP152 7 15 MIN 300 350 400 300 350 400 250 250 250 A mA A V V TYP MAX UNIT

V (BR)CEO

ICEO

ICEX(sus) IEBO

hFE

VCE(sat)

IB = 100 mA IB = 250 mA IB = 100 mA IB = 250 mA IE = VCE = VCE = 7A 5V 5V

V BE(sat) VEC hfe

|hfe|
Cob

VCB = 10 V

NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%. 5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

thermal characteristics
PARAMETER RJC RJA C C Junction to case thermal resistance Junction to free air thermal resistance Thermal capacitance of case 0.9 MIN TYP MAX 1.56 62.5 UNIT C/W C/W J/C

inductive-load-switching characteristics at 25C case temperature

PARAMETER tsv tsi trv tti txo

TEST CONDITIONS

MIN

TYP 3.9 4.7

MAX

UNIT s s s s s

Voltage storage time Current storage time Voltage transition time Current transition time Cross-over time IC = 5 A V (clamp) = V(BR)CEO IB(on) = 250 mA RBE = 47

1.2 1.2 2.0

Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

PRODUCT

INFORMATION

TIP150, TIP151, TIP152 NPN SILICON POWER DARLINGTONS

JUNE 1973 - REVISED MARCH 1997

PARAMETER MEASUREMENT INFORMATION

24 V

Vz

L = 7 mH

Driver and Current Limiting Circuit

TUT 100

0.22 F

0.2

Figure 1. Functional Test Circuit

16.6 ms 11.6 ms Input Signal

0 IB

Base Current

0 IC

Collector Current Collector Emitter Voltage

0 Vclamp 0 24 V

Figure 2. Functional Test Waveforms

40 V 0.056 7 mH IRF140 BY205-600 V in = 10 V 1 k TUT Adjust for IB V clamp 47 12 V

Figure 3. Switching Test Circuit

PRODUCT

INFORMATION

TIP150, TIP151, TIP152 NPN SILICON POWER DARLINGTONS

JUNE 1973 - REVISED MARCH 1997

TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT
VCE = 5 V t p = 300 s, duty cycle <2% hFE - Typical DC Current Gain TC = 125C TC = 25C TC = -30C VCE(sat) - Collector-Emitter Saturation Voltage - V 10000
TCD150AA

COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT

10 IC / IB = 20 tp = 300 s, duty cycle < 2%
TCD150AB

1000

10

100

TC = 125C TC = 25C TC = -30C 01 04 10 IC - Collector Current - A 10

10 04

10 IC - Collector Current - A

10

Figure 4.

Figure 5.

BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT

30 VBE(sat) - Base-Emitter Saturation Voltage - V IC / IB = 20 t p = 300s, duty cycle < 2% 25

TCP150AC

COLLECTOR CUT-OFF CURRENT vs CASE TEMPERATURE

1000 VCE = 400 V IB = 0
TCD150AD

ICEO - Collector Cut-off Current - A

100

20

10

15 TC = -30C TC = 25C TC = 125C 10 04 10 IC - Collector Current - A 10

10 -50

-25

25

50

75

100

125

TC - Case Temperature - C

Figure 6.

Figure 7.

PRODUCT

INFORMATION

TIP150, TIP151, TIP152 NPN SILICON POWER DARLINGTONS

JUNE 1973 - REVISED MARCH 1997

MAXIMUM SAFE OPERATING REGIONS

MAXIMUM FORWARD-BIAS SAFE OPERATING AREA

100

SAD150AA

IC - Collector Current - A

10

10

0.1

t p = 0.1 ms tp = 1 ms tp = 5 ms DC Operation 10

001 10

TIP150 TIP151 TIP152 100 1000

VCE - Collector-Emitter Voltage - V

Figure 8.

THERMAL INFORMATION
MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE
100 Ptot - Maximum Power Dissipation - W

TID150AA

80

60

40

20

0 0 25 50 75 100 125 150 TC - Case Temperature - C

Figure 9.

PRODUCT

INFORMATION

TIP150, TIP151, TIP152 NPN SILICON POWER DARLINGTONS

JUNE 1973 - REVISED MARCH 1997

MECHANICAL DATA TO-220 3-pin plastic flange-mount package

This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.
TO220 4,70 4,20

3,96 3,71

10,4 10,0

2,95 2,54 6,6 6,0 15,90 14,55

1,32 1,23

see Note B

see Note C

6,1 3,5

0,97 0,61 1 2 3

1,70 1,07

14,1 12,7

2,74 2,34 5,28 4,88 2,90 2,40

0,64 0,41

VERSION 1

VERSION 2

ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. MDXXBE

PRODUCT

INFORMATION

TIP150, TIP151, TIP152 NPN SILICON POWER DARLINGTONS

JUNE 1973 - REVISED MARCH 1997

IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.

Copyright 1997, Power Innovations Limited

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INFORMATION

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