TIC226 SERIES SILICON TRIACS

8 A RMS Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max IGT of 50 mA (Quadrants 1 - 3)
MT1 MT2 G

TO-220 PACKAGE (TOP VIEW)

1 2 3

Pin 2 is in electrical contact with the mounting base.

MDC2ACA

absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING TIC226D Repetitive peak off-state voltage (see Note 1) TIC226M TIC226S TIC226N Full-cycle RMS on-state current at (or below) 85C case temperature (see Note 2) Peak on-state surge current full-sine-wave at (or below) 25C case temperature (see Note 3) Peak gate current Peak gate power dissipation at (or below) 85C case temperature (pulse width 200 s) Average gate power dissipation at (or below) 85C case temperature (see Note 4) Operating case temperature range Storage temperature range Lead temperature 1.6 mm from case for 10 seconds IT(RMS) ITSM IGM PGM PG(AV) TC Tstg TL VDRM SYMBOL VALUE 400 600 700 800 8 70 1 2.2 0.9 -40 to +110 -40 to +125 230 A A A W W C C C V UNIT

NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1. 2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85C derate linearly to 110C case temperature at the rate of 320 mA/C. 3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost. 4. This value applies for a maximum averaging time of 20 ms.

electrical characteristics at 25C case temperature (unless otherwise noted )

PARAMETER IDRM Repetitive peak off-state current Gate trigger current VD = rated VDRM Vsupply = +12 V IGT Vsupply = +12 V Vsupply = -12 V Vsupply = -12 V Vsupply = +12 V VGT Gate trigger voltage On-state voltage Vsupply = +12 V Vsupply = -12 V Vsupply = -12 V VT IT = 12 A TEST CONDITIONS IG = 0 RL = 10 RL = 10 RL = 10 RL = 10 RL = 10 RL = 10 RL = 10 RL = 10 IG = 50 mA TC = 110C tp(g) > 20 s tp(g) > 20 s tp(g) > 20 s tp(g) > 20 s tp(g) > 20 s tp(g) > 20 s tp(g) > 20 s tp(g) > 20 s (see Note 5) 6 -12 -10 25 0.7 -0.8 -0.8 0.9 1.5 2 -2 -2 2 2.1 V V MIN TYP MAX 2 50 -50 -50 mA UNIT mA

All voltages are with respect to Main Terminal 1.

PRODUCT

INFORMATION
1

APRIL 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.

TIC226 SERIES SILICON TRIACS

electrical characteristics at 25C case temperature (unless otherwise noted) (continued)
PARAMETER IH IL dv/dt dv/dt(c) Holding current Latching current Critical rate of rise of off-state voltage Critical rise of commutation voltage Vsupply = +12 V Vsupply = -12 V Vsupply = +12 V Vsupply = -12 V VDRM = Rated VDRM VDRM = Rated VDRM TEST CONDITIONS IG = 0 IG = 0 (see Note 6) IG = 0 ITRM = 12 A TC = 110C TC = 85C (see figure 7) 5 100 Init ITM = 100 mA Init ITM = -100 mA MIN TYP 10 -6 MAX 30 -30 50 -50 UNIT mA mA V/s V/s

All voltages are with respect to Main Terminal 1. NOTES: 5. This parameter must be measured using pulse techniques, t p = 1 ms, duty cycle 2 %. Voltage-sensing contacts separate from the current carrying contacts are located within 3.2 mm from the device body. 6. The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics: R G = 100 , tp(g) = 20 s, tr = 15 ns, f = 1 kHz.

thermal characteristics
PARAMETER RJC RJA Junction to case thermal resistance Junction to free air thermal resistance MIN TYP MAX 1.8 62.5 UNIT C/W C/W

TYPICAL CHARACTERISTICS

GATE TRIGGER CURRENT vs CASE TEMPERATURE

1000 Vsupply IGTM IGT - Gate Trigger Current - mA + + 100 + +
TC01AA

GATE TRIGGER VOLTAGE vs CASE TEMPERATURE

10 Vsupply IGTM VGT - Gate Trigger Voltage - V + + + +
TC01AB

VAA = 12 V RL = 10 tp(g) = 20 s

VAA = 12 V RL = 10 tp(g) = 20 s

10

1 -60

-40

-20

20

40

60

80

100

120

01 -60

-40

-20

20

40

60

80

100

120

TC - Case Temperature - C

TC - Case Temperature - C

Figure 1.

Figure 2.

PRODUCT
2

INFORMATION

APRIL 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.

TIC226 SERIES SILICON TRIACS

TYPICAL CHARACTERISTICS
HOLDING CURRENT vs CASE TEMPERATURE
1000 Vsupply + IH - Holding Current - mA 100 VAA = 12 V IG = 0 Initiating ITM = 100 mA IL - Latching Current - mA
TC01AD

LATCHING CURRENT vs CASE TEMPERATURE

1000 Vsupply IGTM + + 100 + +
TC01AE

VAA = 12 V

10

10

01 -60

-40

-20

20

40

60

80

100

120

1 -60

-40

-20

20

40

60

80

100

120

TC - Case Temperature - C

TC - Case Temperature - C

Figure 3.

Figure 4.

THERMAL INFORMATION
MAX RMS ON-STATE CURRENT vs CASE TEMPERATURE
10 IT(RMS) - Maximum On-State Current - A 9 8 7 6 5 4 3 2 1 0 0 25 50 75 100 125 TC - Case Temperature - C
TI01AB

MAX AVERAGE POWER DISSIPATED vs RMS ON-STATE CURRENT

P(av) - Maximum Average Power Dissipated - W 32 28 24 20 16 12 8 4 0 0 2 4 6 8 10 12 14 16 IT(RMS) - RMS On-State Current - A TJ = 110 C Conduction Angle = 360 Above 8 A rms See ITSM Figure
TI01AC

Figure 5.

Figure 6.

PRODUCT

INFORMATION
3

APRIL 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.

TIC226 SERIES SILICON TRIACS

PARAMETER MEASUREMENT INFORMATION

VAC VAC

L1

ITRM IMT2 C1 50 Hz IMT2 VMT2 DUT RG R1 IG See Note A VMT2 10% dv/dt 63% VDRM

IG NOTE A: The gate-current pulse is furnished by a trigger circuit which presents essentially an open circuit between pulses. The pulse is timed so that the off-state-voltage duration is approximately 800 s. PMC2AA

Figure 7.

PRODUCT
4

INFORMATION

APRIL 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.