1.

The force on a unit positive charge at any point in an electric eld is dened as (a) electric potential (b) Charge density (c) Electric eld intensity (d) Magnetic eld intensity 2. A charge in an electric eld of strength E = 2 V/m is moved from 0 to 5m. Then potential drop V is (a) 2/5 volts (b) 2.5 volts (c) 10 volts (d) zero 3. If the radius of an electron has been estimated as 10x m, then x = (a) 18 (b) 9 (c) 15 (d) 12 4. Screen of the C.R.T. is coated with (a) Flouroscent material (b) Chromium (c) Cadmium (d) Phosphorous material 5. The function of accelerating anode is to allow the ow of electrons towards (a) cathode (b) anode (c) grid (d) screen 6. Time base circuit in CRO generates (a) triangular wave (b) square wave (c) sine wave (d) sawtooth 7. The sync control in CRO is used to (a) control the intensity of the beam (b) control the width of the sweep signal (c) focus the beam (d) lock the input signal being viewed 8. A point source of electrons is situated in mutually perpendicular uniform magnetic and electric elds. The magnetic ux density is 0.01 b/m2 and electrical eld strength is 104 v/m. Determine the minimum distance from the same at which an electron with zero velocity will again have zero velocity (a) 3.6 cm (b) 3 cm (c) 36 cm (d) 0.36 cm 9. In a CRT, a pair of deecting plates are 2.0 cm long and are spaced 0.5 cm apart. The distance from the centre of the plates to the screen is 24 cm. The nal anode voltage is 1000v and deecting voltage is 30 v. Calculate the velocity of the beam on emerging from eld. (a) 1872 m/sec (b) 18.72 106 m/sec. (c) 1.872 106 m/sec (d) 0.1872 106 m/sec. 10. When the electron emitted perpendicular to both E and B and VOX = D &VOY = 0 then the VOZ = (a) 0 (b) E (c) E (d) B 11. The ideal value of resistance of the PN junction diode in reverse bias is (a) 100 (b) innite (c) zero ohm (d) 500 12. In the P-N junction diode the barrier potential VO is given by the relation (a) 1/VT 1n NA ND /n2 i (b) KT 1n n2 i / NA ND (c) KT 1n (NA ND /n2 i) (d) KT e NA /nI 13. The electron concentration in a semiconductor is shown in gure 13. Determine the potential between points x = (0) 0and x = w given nn = 103 . 0

Figure 13 (a) 175 mV (b) -170 mV (c) - 173 mV. (d) 160 mV 14. For what voltage will the reverse current in a PN junction silicon diode reach 95 percent of its saturation value at room temperature (a) -150 m V (b) 150 m V (c) 1.5 m V (d) -1.5 m V 15. For the step graded junction diode incremental depletion capacitor CT is (a) ACO (1 (b) ACO (1 (c) ACO (1 (d) ACO (1
VD 1/2 ) VO VD 1/3 ) VO VD 1/2 ) VO VD 1/3 ) VO

16. Drift of the electrons in a region is due to (a) Thermal energy (b) applied magnetic eld (c) applied electric eld (d) radiation 17. In any PN junction, the transition capacitance CT varies with respect to W as (a) W (b) 1/W (c) W (d) W2 18. Avalanche breakdown in a semiconductor diode occurs when (a) the potential barrier is reduced to zero (b) forward current exceeds a certain value (c) forward bias exceeds a certain value (d) reverse bias exceeds a certain value 19. The equivalent circuit of Tunnel diode is (a) Shown in gure19a

Figure 19a (b) Shown in gure19b

Figure 19b (c) Shown in gure19c

Figure 19c (d) Shown in gure19d

Figure 19d 20. The fermilevel in intrinsic semiconductor EF = (a) (b) (c) (d)
Ec +Ev 2 Ec Ev 2 Ev 2 Ec 2