]<gj]<]<j<^]<]

? ? ?
K ?

KKK

KKKKKK


]<gj]<]<j<^]<]

W
K

K
K
K
K

--

Introduction J

K(doping)

K(p-type)pJ (n-type) nJ

pJ nJ

pn
Kp-nK
The p-n Junction Diodep-nJ
(Continuous and single crystal) p-n

K(Acceptor impurity)(Donor impurity)

n-p-n

(p-type)p-(n-type)

EJ F K

pJ
K
nJ A (anode)

KK(cathode)

p-n

(A)

(K)

(A)

EF
EF
KEJ F
K EFK EF
--

(K)

FEJ F

(Electrons)(Holes)p-
E
n-

p-

p-n

n-

Kp-n
EJ F

The p-n Junction Diodeat Equilibriump-nJ

p-n

KEJ Fn , p
K

Knpp n

pJ
KnJ pJ

p-

p-n

n-

KEJ F
--

np p

(space-charge)K

(Depletion Region)
.(Space-charge Region)(Transition Region)

Kp-nEJ F
K
p-

p-n
+

n-

p-EJ F

"p

VB"
pJ nJ

.nJ pJ

--

The p-n Junction Diode with Applied Biasp-nJ

(Forward Bias)
(Reverse Bias)KnJ pJ
KKnJ pJ
Forward BiasJ J
pJ
p-n

EJ FnJ

pJ

nJ

KnJ
pJ

nJ

KpJ

p-

p-n

+
+
+
+

If
+

n-

KEJ F

--

KnJ pJ pJ nJ

K

K If(Forward current)
K

EJ F
K

.{V
.{V

nJ

K(Rp)pJ (Rn)

RpRn

--

VB
Rp

Rn

EJ F

Reverse BiasJ J
pJ
p-n
EJ FnJ

nJ

K

pJ

nJ
K
pJ
K

pJ

KpJ
nJ
nJ

nJ
pJ

.Ir EF

KIo(Reverse saturation current)

K

--

RpRn

p-

p-n
+
+
+
+

Ir
-

+
+
+
+

n-

EJ F

Characteristics of the Semiconductor DiodeJ

EJ FK

.(Ge)(Si)
F

.(Breakdown voltage) VBRE

EJ F

{V

K {V
K
--

IF, mA

Ge

VR, V

VBR(Ge)

VBR(Ge)

Si

V V

VF, V

IR, A

KEJ F

V

K

EJ F

--

The Diode as a CircuitElement J

EJ F

KViRLD

+
Vi

VD
ID

RL

EJ F

The Load Line and Operating Point

KEJ F

Vi

= VD + ID RLEJ F

VD,ID

J FVD,ID
KE

EJ FEJ F

ID
WVi =

ID= Vi / RLEJ F

VD

WID =

- -

VD= Vi EJ F

ID, mA

Vi /RL

IDQ

Q E)

VDQ

Vi

VD, V

K EJ F

KQ

VL = ID RL = Vi - VD EJ F
WJ

Vi= {V RL= EJ F

KEJ F
W

EJ FViRL

W
ID= Vi / RL= { V/ = mA

- -

EJ FVi

VD= Vi = { V
Q

mA
IDQ

VLK{VVDQ

WEJ F

VL = Vi - V D = { V - { V = { V

ID, mA

Q E)

IDQ =

VDQ

VD, V

VL

Vi

EJ F

Diode ResistanceJ

Static ResistanceRsJ J

VDRs
ID
WK
- -

RS =

VD
EJ F
ID

Dynamic ResistancerdJ J

WQ
rd =

V D
|Q point EJ F
I D

K
The Diode Equivalent Circuit J

KEJ F

VB

Rf(forward resistance)
KEJ F

- -

ID, mA
A

Rr

Rf
K

EF

E F

VB

VB

VD, V

E F

EJ F

Rr

J F(Reverse resistance)
KE
The Ideal Diode

J EJ FK

ID

K VD

ID

VD
Rf = (short-circuit)

(open-circuit)EEJ FFVB =
KEEJ FFRr =

- -

ID, mA
A

EF

EF

VB

VD, V

EF
KJ EJ F

Ge SiJ
Comparison between Silicon and Germanium Diodes

KEJ F

{ V

{ V

oC

oC

- -

J
WJ
K K
K K

K K

KJ
WJ
K
K EF

K EF
K EF

K
EF

EF

EF

K
K EF
K EF

K EF
J
KJ
J
KJ J
KJ
- -


]<gj]<]<j<^]<]

W
K
K
K

- -

Introduction

K
The Basic DC Power SupplyJ

J FK

Vi

Vac

VDC

KEJ F

The Half-Wave RectifierJ

K


EJ F
- -

( ac voltage source)

K(load resistance)

(ideal diode)K

KEJ F

RL

Vi

EJ F

+
Vi

+
t

I
RL

Vo

KEJ F
+
I=A

Vi

Vo
RL

tt

KEJ F

- -

Vo

KEJ F

K EJ )

KEJ FKEJ F
J J

Average Value of the Half-Wave Output Voltage

(dc voltmeter)
(peak value)KEJ F

(average value)VPo
WVave

Vave =

VPo

EJ F

Vpo
Vave

Area

KEJ F

- -

WJ

KEJ F(Vave)

EJ F

Vave =

VPo

50
= 15.9V
3.14

J J

Effect of the Barrier Potential on the Half-Wave Rectifier Output

VPo
EJ F VPi
-: E{V =F

VPo = VPi {

EJ F

EVF
K

- -

V
+

Vpi

VPo = Vpi V

RL

Vo
_

EJ F

WJ
.EJ F

V
RL
=k

Vi

Vo

-V

()

RL
=k

Vi

Vo

-V

E F

EJ F

- -

W
WEF
VPo = VPi { = V {V = {V

WEF
VPo = VPi { = V {V = {V

EJ F
V

EJ F

- -

Peak Inverse Voltage (PIV)J J

EJ F

.( PIV)

EJ F

W
EJ F

PIV = VPi
PIV at tp
+
Vi

I=A
tp

RL
+

-VPi

K EJ F

J J

Half-Wave Rectifier with Transformer-Coupled Input Voltage

(Transformer)
(Primary windingF

(Secondary windingF

KEJ F
K(Electric fieldF

- -

Vi

RL

KEJ F

W
N
V2 = 2 V1
N1

EJ F
-:

= N

= N

=V
=V
EJ F

EN > NF
N <N FEV > VF

KEV< VFE
Z VFE N ZN F

KE V

- -

VP VPo

WVB

EJ F

VPo = VP VB

:J
KEJ F
:

V
Vi

RL

EJ F

Vo

WVP
VP = VPi = V

WVP
N
1
VP 2 = 2 VP1 = 150 = 50V
3
N1

W VPo
VPo = VP - VB =V {V = {V

- -

Full-Wave RectifiersJ

KEJ F

Vin

Vout V

K EJ F

(Vave)
W
Vave =

2VPo

EJ F

WJ
KEJ F(Vave)
V

EJ F

- -

W
Vave =

2VP

2(15V )
= 9.55V
3.14

J J

The Full-Wave Center-Tapped Rectifier

EJ F
DD

K

Vin

RL

K EJ )

EJ F
D
D

KD

DEJ F

KDD
- -

Vi

Vo

+
RL

K EJ F
N

Vo

Vi
+
to

+
RL

I
+

to

KEJ F

EJ )

KEJ F
VPo =(VP/)-V
Vo

KEJ F

- -

Vo =

V2
- VB
2

EJ F

EJ FW

D
D

D (PIV)
K

+(VP/)
+

+(VP/)VB
-

(VP/)

+
RL
-

D
+

+(VP/)-VB VP -VB

KEJ F

(VP/)J VBD

(PIV)-VP/
W
V
V
PIV = P 2 V B - P 2
2
2

= VP2 -VB
QVPo =

Vp2
2

- VB

VP 2 = 2 VPo + 2 VB

- -

W
PIV = 2 VPo + VB

EJ F
WJ
WEJ F

KJ
KJ

.RLJ

K(PIV)J

V
Vin V

-V

V
V

RL=1k
D

EJ F

W(VP) K
N2
1
VP1 = 200 = 50V
4
N1

VP 2 =

W(VP/) K
(VP/) = V

= (VP/)-V= -=V
VPo

Vo

PIV = 2 VPo + VB = (2 24.3) + 0.7 = 49.3V

- -

The Full-Wave Bridge RectifierJ J

KEJ F

D , D

D ,DD,D
KEJ F

D,D
D,D
N
+

KEJ FD ,D

N
+

Vo

D
D

RL

+
Vo
-

K EJ )
N

N
I

Vo

D
D
+

RL

+
Vo
-

KEJ F
K EJ F

- -

EJ F
K

(D,D D,D )

EJ F

Vo = V2 2VB

K VB = VB = {V
W

K
D,D
D , D
DD
(PIV)

EJ F

(PIV)

EJ F

PIV = VPo + VB

N
+
D

VP

+
PIV

VB

VP
+
VB

+
PIV

K EJ F

RL

+
Vo
-

- -

:( )
EJ F

D
V

V rms

RL

+
Vo
-

EJ F

W(VP)
VP 2 = 2 Vrms = 1.414 12V 17 V

W(VPo)
VPo = VP 2 2VB = 17V (2 0.7 V) = 15.6V

W(PIV)
PIV = VPo + VB = 15.6V + 0.7V = 16.3V
FiltersJ

EJ F
K

- -

Vi
V

Vo

KEJ F

Capacitor Filter

J J

K
EJ F

KEJ FE{VF

EJ F

RLC

(The time constant)

KEJ F

- -

+
Vi

VPi
V

VC

+
RL

K EJ F

+
Vi

VC

K EJ F
Vi > VC

+
+

RL

I
+

VC

+
RL

KEJ F

KEJ F
(ripple voltage)

KEJ F

- -

KEJ F

EJ F
K

(ffw)
EJ F (fhw)

EJ F

- -

EF

KEF

KEF
EJ )
K

:(ripple factor)

(ripple voltage) (dc voltage)

KEJ F

Vr(PP)
VP(rect)

VDC

EJ F

(ripple factor)
W

- -

r=

Vr ( PP )

EJ F

VDC

-:

=r

=Vr(PP)

EF=VDC

EJ F

VDCVr(PP)

1
VP ( rect )
Vr ( PP ) =
fR
C
L

EJ F

1
VP ( rect )
VDC = 1
2 fRL C

EJ F
-:
(Hz) = f

()=RL
(F)ZC

(V)= VP(rect)

- -

WJ
KEJ F

WVP
VP1 = 2Vrms = (1.414)(15)V = 163V
:
D
V
rms VP
Hz

VP
D

C
F

RL

EJ F

WVP
N

VP 2 = 2 VP1 = 163V = 16.3V

10
N1
WVP(rect)
1

VP ( rect ) = VP 2 1.4V = 16.3V - 1.4V = 14.9V

WVr(PP)

1
1
VP ( rect ) =
14.9V = 1.13V
(120Hz)(2.2K)(50F)
fRL C
WVDC

Vr ( PP ) =

- -

1
1
VP ( rect ) = 1
14.9V = 14.3V
VDC = 1
2(120Hz)(2.2K)(50F)
2 fRL C

r =

Vr ( PP )
VDC

W
=

1.13V
= 0.079
14.3V
{K

- -

KJ
KJ
.EJ FJ

V
RL

Vi

Vo

-V

()

RL

Vi

Vo

-V

E F

EJ F

EJ FJ
EJ FJ

V rms

RL

EJ F
- -

WEJ FJ
EF

KEF

KEF
EF

.RL

KEF

K(PIV)EF

V rms
RL=1k
D

EJ F

J
KV
KJ
KJ
(PIV)J
KV

V (rms)J
K(PIV)
KEJ FJ

- -

V
rms
Hz

RL
K

J F

WVEJ FJ
EF

KEF

:
D

Vin

EJ F

C
F

RL

- -


]<gj]<]<j<^]<]

- -

W
K
K

- -

IntroductionJ

E
J

(Breakdown Voltage )
K
Zener DiodeJ

p-n

K

pJ nJ
.WV {VK

(Avalanche Breakdown)EVF

J
KK

(Zener Breakdown)

EVF

KJ

- -

Zener diode characteristic curveJ

K EJ F

Vz

.(Voltage Regulator)

IF

Vz

VR

VF
IZK

EF

IZM

EF

IR

EF
EFWEJ F

E FIZK
IZKKKEFIZM

K
- -

IZM

Zener diode equivalent circuit

EJ F

K rZVZ
EJ FrZ

IZVZ
WrZ

rZ =

V Z
I Z

EJ F
VZ

VR

IF

IZ

IZK

rz
+
-

I Z

VZ

EF

IZM

EF

IR

EFKEFWEJ F

- -

WJ
KJ rZ

VZ = mV

VR

IF

IZK

mA
I Z = 2mA

mA

IZM

IR

rZ =

VZ 50mV
=
= 25
I Z
2mA

WJ

VZDVZ={VrZ =

.mA

VZD = VZ + IZ rZ

= { V + mA 103 (A/mA) 5 = 6.9 V

(ideal zener diode)

EFJ
(VZ = )
W
rZ =

V Z
0
=
=0
I Z
I Z

EJ F

- -

EFJ
KVZ

VZ =

VR

IF

IZK
+

VZ

I Z
A

A
IZM

EF

EF

IR

KEFWEJ F

EF

Temperature coefficientJ

VZ

VZ{ / oCVZ = VK

VZ.oC{ V
W

EJ F

VZ = VZ TC T

:
C = VZ
o

= TC

.= T

- -

( positive temperature coefficient)TC

VZ

VZ
(negativetemperature coefficient)

(mV / Co)
WVZ(% / Co)
VZ = TC T

WJ
K{ / Co
{V

. oC
:

W oC oC
VZ = VZ TC T

= ({V)({ / Co)(60oC

oC) = mV

W oC
VZ +VZ = { V + mV = { V

Zener Power Dissipation J

WPZ

P Z = V Z IZ

PZVZ

PZ(max)KIZ
W (maximum power dissipation of a zener diode)

PZ(max) = VZ IZMEJ F

.(maximum zener current)IZM

- -

WJ
mAV

K mA
W

PZ(max) = VZ IZM

= (V)(mA) = mW

Zener Diode as a Voltage RegulatorEFJ

EF

(line regulation)
.(load regulation)

Zener Regulation with a Varying Input Voltage J J

VLEJ F

KVinVZ

Vin
RVZ

ILKIt

It

KIZMIZKIZ

It

IZ

IL

+
Vin
-

DZ

RL VL = VZ

EJ F
- -

WJ
RL = R = VZ = V
EJ F

K VV rZ =

.(IZ(max)IZ(min)) EF

(PZ(max) PR(max)) REF

It

+
Vin = V
-

IZ

IL
RL VL = VZ

DZ

EJ F

IL =

W RL EF

VZ
20V
=
= 0.1A
RL 200

WR

Vin VZ
R
VinIt
RVZ
It =

It(max)Vin = VIt(min)

I t (min) =
I t (max) =

24V 20V
= 0.2A
20

KVin = V

30V 20V
= 0.5A
20

W
It = IZ + IL

- -

(IZ = IZ(min))IL
KIt(max) (IZ = IZ(max))It(min)

I Z (min) = I t (min) I L = 0.2A 0.1A = 0.1A

I Z (max) = I t (max) I L = 0.5A 0.1A = 0.4A

WR EF
PR(max) = It(max) R

= ({A) () = W

W
PZ(max) = VZ IZ(max)

= (V)({A) = W

Zener Regulation with aVariable LoadJ J

VLEJ F

KRLVZ

It

IZ

IL

+
Vin
-

DZ

RL VL = VZ

EJ F

(RL = )J

RLK It
IL
RLK

K It
IZIL

- -

IZ VZ VL
W(IL(max))IL(IZK)

EJ F

It = IZK + IL(max)

WJ

EJ F RL(min)IL(min)IL(max)

KrZ = IZM = mAIZK = mAVZ =V

It
+
Vin = V

IZ
DZ

IL

RL VL = VZ

EJ F

W
ItIZIL = ARL =
Vin VZ 24V 12V
=
= 25.5mA
R
470

IZM IZ(max)
I Z (max) = I t =

IL = A
K

I L (min) = 0A

Q I t = I ZK + I L (max)

I L (max) = I t I ZK = 25.5mA 1mA = 24.5mA

WRL(min)

RL (min) =

VZ
I L (max)

= 490
- -

{ mA
IL RL

K( mA)IZKIZ
Percent RegulationJ

WVinVout

V
Line regulation = out
Vin

100%

WJ
{V

V
W

V
Line regulation = out
Vin

0.25V
100% =
100% = 5%
5
V

(full load) (no load)

W

V VFL
100%
Load regulation = NL
VFL

J W

ZVNL

ZVNL

- -

WJ
V

{V

W
V VFL
100%
Load regulation = NL
V

FL

12V 11.95V
=
100% = 0.418%
11.95V

- -

KJ
m {V{VJ
mA

{ oC oC J

.+ { / oCV

EJ FJ
KVZ = VIZK = { mA
R

+
DZ

Vin

EJ F
RL = R = VZ = V
EJ FJ
K VVK rZ =
KEF

K EF
R

+
Vin
-

DZ

EJ F
- -

RL

IZM = IZK = mAVZ =VVin=VEJ FJ

RLKrZ = R = mA

+
Vin

DZ

RL VL = VZ

EJ F

V{VJ
V

{V J
{V

- -


]<gj]<]<j<^]<]

W
K
K

K
K

- -

-
K

Introduction

K(Field Effect Transistor)(Bipolar Junction Transistor)

J
J
J

J
Structure of Bipolar Junction Transistor J

KEEpitaxial planar structureF

EBaseFEEmitterF

KEJ F p-n

J FpnpnpnECollectorF
KE

J pn

J
EBase-Emitter JunctionF

EJ FEBase-Collector JunctionF

KB CE

- -

C (Collector)

Metalized contacts

Oxide

Emitter
Base

n
Base-Collector

B
(Base)

Collector

nJ
Base-Emitter
junction

Substrate

E (Emitter)

EF

EF

K EJ F

EJ F

Kpnpnpn
C

C
B

B
npn

pnp

K EJ F
Basic Transistor Operation J

pnp npn EJ F

K
K

- -

+
+

+
+

npn

- +

pnp

EJ F

KJ

J
npn
W

KEJ F

n J
EBE junctionFJ

K
J
J
K

J
KEJ F
J
K
- -

J
K

J
KEJ F

(n)

(p)

(n)

BE junction
Depletion region

BC junction
Depletion region

KEJ F
W
pnpnpnEJ F

WICIBIE
EJ F

I E = IC + I B
- -

K
_
IC

IE
IB

_
IE

npn

IC
IB

pnp

EJ F
Transistor Characteristics and ParametersJ

dcE Fdc

K
Transistor DC Bias Circuits J J

VBB

J VCCJ

KEJ F

Relationship of dc and dcdcdcJ J

IB IC dc
dc =

IC
IB

W
EJ F

KIEICdc
dc =

IC
EJ F
IE
- -

W
I E = IC + I B

WIC

IE
I
=1+ B
IC
IC

J F

E
WdcdcEJ FEJ FEJ F
dc =

dc
1 - dc

EJ F

dc

Kdc

RC

IC
VCC

RB
VBB

RC

IB
IE

npn EJ F

IB
IE

pnp EJ F

EJ F

- -

VCC

RB
VBB

IC

:J

KIC = {mAIB = AdcIEdc

dc =

I C 3.65 mA
=
= 7.3
IB
50 A

I E = I C + I B = 3.65mA + 50 A = 3.70mA

dc =

IC
3.65 mA
=
= 0.986
IE
3.70 mA

Current and Voltage Analysis J J

EJ F
W

KWIB

KWIE
KWIC

KWVBE

KWVCB

KWVCE

- -

RC

IC

VCB

RB
VBB

VCC
VCE

IB

VBE
IE

.EJ F

VBB

VCCJ

WEBarrier PotentialF

VBE = 0.7 V EJ F

VR = VBB - VBE = I B RB

KRB

IB =

WIB

VBB - VBE
RB

( J F
WRC

VR = IC RC
C

W
J F

VCE = VCC - IC RC

IC = dc I B
- -

VCB = VCE - V BE EJ F

WJ
EJ FVCBVCEVBEIEICIB

.dc

RC =
VCC = V

RB = K

VBB = V

W
J F
WIEICIB
IB =

VBB - VBE 5V - 0.7V

=
= 430 A
RB
10 K

I C = dc I B = (150)(430A) = 6405 mA

I E = I C + I B = 64.5mA + 430 A = 64.9 mA

WVCBVCE
VCE = VCC - I C RC = 10V - (64.5mA)(100) = 10V - 6.45V = 3.55 V
VCB = VCE - VBE = 3.55 V - 0.7 V = 2.85 V

- -

Collector Characteristic CurvesJ J

EJ F

KIBVCEIC

KVCCVBB
W

VCCIBVBB
J V
{V
J
KV

EF
KIC

VCEVCC
K BAEJ FIC

{VVCE
VCCIC
KJ

RC
RB
VBB

IB

IC

VCB

VCC

VCE
VBE
IE

KEF

- -

IC

VCE(max)

VCE

KIBVCEICEF
EJ F
J {VVCE
IC

.VCEIB

IC
K

CBICdc

KIC = dc IBdc
J VCE

CEJ F

EBreakdown regionF

EJ F
K

- -

EJ F ECutoff regionF
IC
IB
IB
IB
IB
I B
IB =

VCE

(Cutoff region)

KEJ F
WJ
EJ F

dcAAAIB
KVCE

RC

IC
VCC

RB
VBB

IB

dc =
IE

EJ F
- -

W
W
I C = dc I B

IB

WEJ F

IB

IC

{mA

{mA

{mA

{mA

{mA

EJ F

WEJ FEJ F

- -

IC(mA)

IB = A

IB = A

IB = A

IB = A

IB = A

VCE(V)

Transistor Operation RegionsJ J

Cutoff regionJ J J

IB

EJ F
J KVCE = VCC
K

- -

RC
+

RB

VCC
VCE = VCC

IB =

J EJ F
K

Saturation regionJ J J

IB

(VCE)(IC = dc IB)

KEJ FEVCE = VCC ICRCF

VCE(sat)VCE
IC = dcIBIB
K

RC

IC

VCC

RB
VBB

VCE

IB

VCE = VCC IC RC
IE

EJ F
- -

DC Load LineJ J J

EJ F K

EIC = and VCE = VCCF

EIC =IC(sat) and VCE =VCE(sat)F

K
IC

Saturation

IC (sat)

IB =
VCE(sat)

VCE

VCE = VCC

EJ F
WJ
EJ F

KVCE(sat) = {V
:

W IC(sat)
I C ( sat ) =

VCC - VCE(sat)
RC

10V - 0.2V 9.8V

=
= 9.8 mA
1K
1K

- -

RC = K

VCC = V

RB =K

dc =

VBB = V

EJ F
WIB
IB =

VBB - VBE 3V - 0.7V 2.3V

=
=
= 0.23mA
RB
10K
10K

WIBIC
I C = dc I B = (50)(0.23mA) = 11.5mA

dc
K{mA

dcJ J

Relationship between dc, Collector current and Temperature

dc
KEJ F

dc EJ F

- -

Tj = oC
Tj = oC

Tj = -oC

dc

Tj = -oC

IC, Collector current (mA)

dcEJ F

- -

K J
K J
K J
J J

J
J
J
AmA J
Adc= J
dc

WEJ FIB, IC, IE, VCE,VCB J

KRB = K, RC = , VBB = V, VCC = V, dc=
WEJ F J
Kdc = , VBB ={V, RB = {K, RC = , VCC = V

Kdcdc J
Kdcdc J
J
dc J

- -


]<gj]<]<j<^]<]

W
K

- -

Introduction J

K J

The Bipolar Transistor as an AmplifierJ

Transistor Amplification

(IC = dc)

VBB VinEJ F
KRCVCCRB

- -

RC

RB
VCC

Vin

VBB

EJ F

RC
KEJ F
Vin

VBB

Vc

VCC

EJ F

- -

AC Equivalent Circuit

EJ F

KVBB, VCC

Wr'e
Ie =

Vb
EJ F
re'

WRCVc
EJ F

Vc = I c RC

WIcIe
EJ F

Vc I e RC
RC

RB
Vin

r'e Vc

VCC

Vb

K EJ F
WVb
EJ F

Vb = Vin - I b RB

AvVc
VbVc

- -

Av =

Av =

Vc I e RC

Vb
I e re

EJ F
W

RC
re

EJ F

EJ F EJ F

RCr'eRC

Kr'e
WJ

EJ F

Kr'e =

W
W
Av

RC 1K
=
= 20
re 50

Vout = AvVb = (20)(100mV) = 2V rms

RC

RB
Vin

r'e Vc
Vb

EJ F
- -

VCC

The Bipolar Transistor as a Switch J

K
W

K
K
K
K

EFEJ F

J
K

J EF

+VCC

+VCC

RC
RB

+VBB

IB

IC(sat)

RC

+VCC

+VCC

RC

IC(sat)
C

IC =

RC

RB

IB =

J EFEF
K EJ F

- -

Conditions in Cutoff

VCE

KVCC

VCE ( cutoff ) = VCC EJ F

Conditions in Saturation

I C ( sat ) =

VCC - VCE(sat)
RC

EJ F

KVCCVCE(sat)
W
I B (min) =

I C(sat)
dc

EJ F

KIB(min)IB

WJ
VIN = VCE EJ FEF

dc = IBEF
VCE(sat)

KVIN = VRBEF

- -

VCC = V
RC = k

VIN

RB

EJ F

W
VIN = V EF
W

VCE = VCC = 10V

F
VCE(sat) E
I C ( sat ) =

I B (min) =

VCC 10V
=
= 10mA
RC 1K

I C ( sat )

dc

10mA
= 50A
200

WARBEF
VR = VIN VBE = 5V 0.7 V = 4.3V
B

RB (max) =

VR

I B (min)

- -

4.3V
= 86k
50A

J
J
KJ

mV
V rmsJ

rms

RC = Kr'e = EJ FJ
K

J
J

KVCE = VCCJ

VCE J

WJ
EFEFJ EFJ EF

WmVV (rmsFJ
EFEFEFEF

WJ

EF EFEFEF

WVCEJ

EF

EF

VCCEF

VEF

EFEFEFEFEFEF
WVCEJ

EF EF

VCCEF

{VEF

WJ
- -

VVCCEF

IB > IC(sat)/ dcEF IB = IC(sat)EF

EF

WJ

EFK EFKEF
KEFK

WJ

EFloatingFEF { VEFVEF

VCCEF

J
mV

mVVJ
mV J
KRC = r'e =

IBKEJ F IC(sat)J

VIN
K

VCE(sat) = V

dc = EJ FRBJ
VINKVIN= V

VCC = V

VCC = V

RC = k
RB =M
VIN

RC = k

VIN

EJ F

RB

EJ F
- -


]<gj]<]<j<^]<]

W
K
K
K

- -

Introduction J

KKK

DC Operating PointJ

VCEIC

K
.Q

DC Load Line

EJ F

KEJ F

IC, mA
IB

RC

IB
IB

IB

VBB

IB

IC

RB

IB

VCC

VCE

IB

IE

VCE, V

EFEF
KEJ F

WJ

EJ F

VCC = IC RC + VCE
- -

EJ FEJ F
W VCE = IC

EJ F

IC = VCC / RC

WIC = VCE
EJ F

VCE = VCC

VBBKVBB IB

KEJ FIBIB

IC, mA

VCC /RC

IB
IB
IB

ICQ

Q EF

IB
IB
IB

VCEQ

VCC

VCE, V

EJ F

IBVBB

K
K

- -

WEJ F

Kdc = EJ F

WKVCEIC

RC

VCC

RB
VBB

J F

QIB =

VBB VBE 10V 0.7 V

=
= 198A
RB
47 k

I C = dc I B = (200)(198A ) = 39.6mA
VCE = VCC I C RC = 20V 13.07 V = 6.93V

Base BiasJ
J VBB
.VCC

VCC
KEJ F

- -

W
KEJ F(line termination circle)
WVCC VBERB

IB =

VCC VBE
RB

EJ F

WEJ F
VCC I C RC VCE = 0

WVCE
EJ F

VCE = VCC I C RC

W IC = dc IBIBEJ F
V VBE
I C = dc CC
RB

EJ F

+VCC

IC

IC

RC

RC
+

IB
RB

VCC

IB

RB

VBE

EF

EF
K EJ F
Effect of dc on the Q-point (Q)dc

dcdcICEJ F

KVCEIC
- -

dc dc

K
dc
. dc

WEJ F

CEJ F

CCdc = KC
VBEK (IC , VCE)

VCC = V

RC

RB

EJ F

W IC , VCE C
V VBE
I C = dc CC
RB

12V 0.7V
= 100
= 11.3mA
100
K

VCE = VCC I C RC = 12V (11.3mA )(560 ) = 5.67V

W IC , VCE C
- -

V VBE
I C = dc CC
RB

12V 0.7 V
= 150
= 17mA
100K

VCE = VCC I C RC = 12V (17mA )(560 ) = 2.48V

WIC
% I C =

I C ( 75 ) I C ( 25

I C ( 25

100%

17mA 11.3mA
100% 50% EF
11.3mA

W VCEKdcIC
%VCE =

VCE ( 75 ) VCE ( 25

VCE ( 25

100%

2.48 V 5.67 V
100% 56.3%
5.67V

EF

Emitter BiasJ

J VEEKEJ F
K

- -

+VCC
IC

RC

RC

RB
IB

+VCC

RB
+
VBE

VC
+

IE

VB

RE

RE

VE

-VEE

VEE

EF

EF

K EJ F

WEJ FEJ F
VEE + I B RB + VBE + I E RE = 0

WVEE

I B RB + I E RE + VBE = VEE

I C I E

I C = dc I B
IB

IE

dc

WIB
- -

IE

RB + I E RE + VBE = VEE

dc
R

I E B + RE + VBE = VEE
dc

IE =

VEE VBE
RE + (RB / dc )

EJ F
W

IC I E
IC

VEE VBE
RE + (RB / dc )

EJ F
W
EJ F

VE = VEE + I E RE

W
EJ F

VB = VE + VBE

W
EJ F

VC = VCC I C RC

W IE IC VCVE

VCE = VCC I C RC (VEE + I E RE )

VCC VEE I C (RC + RE )

- -

WEJ F

EJ FVCEIEIC

KVBE = {Vdc =

+VCC = +V

RC

RB

RE

-VEE =- V

EJ F

W
WIE

IE =

VEE VBE
( 10V ) 0.7 V
9.3V
=
=
= 1.8mA
RE + (RB / dc ) 4.7 K + (47 K / 100 ) 5.17 K

I C I E = 1.8mA
VCE VCC VEE I C (RC + RE )

WVCE

10V ( 10V ) 1.8mA(5.7 K ) = 9.74V

- -

Voltage-Divider Bias J

EJ F

KR, R

RA

KJ

+VCC

I + IB

RC

IC

IB

RE

IE

KEJ F

RIB

KEJ FR, R

IIB
R K(RIN(base))

KEJ F

- -

+VCC

+VCC

A
R

RIN(base)

EF

EF

K EJ F

Input Resistance at the Base

IINVINKEJ F
K

+VCC

RC

VCC

RE

K EJ F

- -

W
RIN(base) =

VIN
I IN

WJ
VIN = VBE + IE RE

WVBE << IE RE
VIN I E RE

W IE IC dc
VIN dc I B RE

W
RIN(base) =

VIN dc I B RE

I IN
IB

WIB
EJ F

RIN(base) dc RE

WEJ F
Kdc = EJ F
RIN(base) dc RE = (125)(1K ) = 125K

Analysis of a Voltage-Divider Bias Circuit

KEJ Fnpn

W
RIN(base) dc RE

- -

+VCC

+VCC

RC

dc

VB

dc RE

RE

EF

E
F

Knpn EJ F

W
R2 // dc RE
R(dc RE)R
KEJ F

W
R2 // dc RE

VCC
VB =
(
)
R
+
R
R
//

2
dc E
1

Wdc RE >>R
R2
VCC
VB
+
R
R
1
2

EJ F

WVB
EJ F

VE = VB - VBE

WIE
EJ F

IE = VE / RE
- -

W
EJ F

IC I E

EJ F

VC = VCC I C RC

WVCEVEVC

VCE = VC VE

WICVCE
VCC I C RC I E RE VCE = 0
W IE IC
VCE VCC I C RC I C RE

VCE VCC I C (RC + RE )

EJ F

WEJ F
EJ FICVCE

Kdc =

RIN(base) dc RE = (100 )(560 ) = 56K

VCC =V

RC

RE

J F
- -

KRIN(base)RRIN(base)
WVB
R2
5.6K
VCC =
VB
10V = 3.59V
15.6K
R1 + R2

VE = VB - VBE = 3.59V - 0.7V = 2.89V

IE = VE / RE = {V / ={mA

W
W

I C 5.16mA

VCE VCC I C (RC + RE ) = 10V 5.16mA(1.56K ) = 1.95V

Transistor ConfigurationsEFJ

W
(Common-Emitter Configuration)
(Common-Collector Configuration)
(Common-Base Configuration)

Common-Emitter AmplifiersJ J
EJ F
KCC, C

- -

VCC = + V

RC
k

R
k
C

Vout

dc=
ac=

Vin

RL
RE

R
k

EJ F

DC Analysis

K EJ F

KEJ F(open)

- -

VCC = + V

RC
k

R
k

dc=

RE

R
k

KEJ F

RIN(base) dc RE = (150 )(560 ) = 84K

RIN(base)RRIN(base)
W
R2
6.8K
VCC =
VB
12V = 2.83V
2
8.8K
R
+
R

1
2
VE = VB - VBE = 3.59V - 0.7V = 2.89V
IE = VE / RE = {V / ={mA

W
W
W

I C 3.8mA

VC VCC I C RC = 12V (3.8mA )(1K ) = 8.2V

W
W

- -

VCE = VC VE = 8.2V 2.13V = 6.07V

AC Analysis

KVCCC, C, C

KEJ F
KEJ F

RS

VS

RC
k

R
k

R
k

RC
R
k

R
k

EF

EF

K EJ F

J FEJ FVb
WE
Rin (tot )
Vs
Vb =

R +R
in ( tot )
s
Vb Vs

W Rs << Rin (tot )

KVinVb
Input Resistance

- -

Rin (base ) =

RS

Vin Vb
=
I in I b
RS

VS

VS

Vin

Rin(tot)=R// R // Rin(base)

Rin(base)

EF

E
F

K EJ F

Vb = I e re

Ie Ic
Ib

Ie

ac

WIbVb
Rin (base ) =

Vb
I r
= ee
Ib Ie

ac

WIe
EJ F

Rin (base ) = ac re

W
Rin (tot ) = R1 // R2 // Rin (base )

EJ F

Output Resistance

WK
EJ F

Rout RC
- -

Voltage Gain of the Common-Emitter Amplifier

Av =

Vout Vc
=
Vin Vb

W
KVc
KVb

Av =

Av =

I e RC
I e re

WVb = Ie r'e Vc = acIeRC IeRC

WIe

RC
re

EJ F
Current Gain

.ac(Ic/Ib)
Ai =

Ic
Is

EJ F

Is

(R//R)
Is =

Vs
Rin (tot ) + Rs

- -

(Common-Collector Amplifiers)J J

(emitter follower)

K()

EJ F

KCC

+VCC

C
Vin
C

Iin
R

Vout

RL

RE

KEJ F

Voltage Gain

KAv = Vo/Vin
Vout = I e Re

W(capacitance reactance)

- -

Vin = I e (re + Re )
Av =

Av =

I e Re
I e (re + Re )

WIe

Re
(re + Re )

J F

KRe = RERE, RL
Re
WRe >> r'eK()
Av 1

Input Resistance

(Buffer)

Rin (base ) =

Vin Vb I e (re + Re )
=
=

I in I b
Ib

I e I c = ac I b
Rin (base ) =

WK

ac I b (re + Re )

Ib

WIb

Rin (base ) ac (re + Re )

EJ F

WRe >> r'e

Rin (base ) ac Re

W
Rin (tot ) = R1 // R2 // Rin (base )
- -

EJ F

Output Resistance

W
R
Rout s // RE
ac

EJ F
Current Gain

IinK(Ie/Iin)

W
I in =

Vin
Rin (tot )

Rin(base)R, R

K
WKIc/Ibac

R1 // R2 >> ac Re

Ai ac
Ai =

Ie
I in

EJ F

- -

(Common-Base Amplifiers)J J

EJ F

CC

+VCC

RC

Vout

Vin

RL
R

RE

EJ F

Voltage Gain

W
Av =

Av

Vout Vc
I c RC
I e RC
RC
= =

=
Vin Ve I e (re // RE ) I e (re // RE ) (re // RE )

WRE >> r'e

RC
re

EJ F
Input Resistance
W

Rin ( emitter ) =

Vin Ve I e (re // RE )
= =
I in I e
Ie
- -

WRE >> r'e

EJ F

Rin ( emitter ) re

Output Resistance

RCr'c

W
EJ F

Rout RC

Current Gain

IeIcK

W.()Ic IeK

EJ F

Ai 1

- -

W J

KEFKEF
KEFKEF

W J

.REdcEF.REEF.RBEFKdcEF

VB = npnJ

W V

{VEF

{V EF

{VEFVEF

J
KEJ F
RC

VBB

VCC

RB

EJ F
VCEIC

IBJ

dc = , VCC =V, RB = k, and RC =

dc J

CCEJ FJ

Cdc
- -

IC .CC

KCCVCE

VCC =+ V

RC

RB

EJ F
KEJ F

KVBE
VCC = + V

RC
k

R
k

DC=

R
k

RE
k

J F
- -

mA

Wr'e

{kEF EFEFkEF
.dc =r'e = RE = J
W

{kEF EFkEFEF
WJ

EFEFEF
KEF

Rin(base) = kJ
WKR = kR = k
{kEF {kEF{kEFkEF

RC = .k J

Wr'e = {k

EF EFEFEF
EJ FJ
AvEFRin(tot)EFRin(base)EF

- -

VCC = + V
RC
k

R
k

Vout

C= F

C = F

Vin

dc=
ac=

RE
k

R
k

EJ F

EJ FJ

VCC =V

dc=
ac=

C
Vin

Vout
R
k

RE
k

EJ F

J
K
- -


]<gj]<]<j<^]<]

W
K

K(MOSFET)

K(MOSFET)

K(MOSFET)

- -

IntroductionJ

(Shockley)

K
K

K
Field Effect Transistor (FET) J

EJ FK

Field Effect Transistor

(FET)

Metal OxideSemiconductor Field Effect TransistorJunction Field Effect Transistor

(MOSFET)(JFET)

pJ nJ
Depletion typeEnhancement typep-channeln-channel
nJ pJ nJ
p-channel

n-channel

p-channel

n-channel

pJ

(Unipolar transistor)

(Bipolar transistor)

(n-channel)nJ (majority carriers)

(p-channel)pJ
- -

K(minority carriers)
W

(thermal stability)J
K

KJ
KJ

KJ
J
K

K(efficiency)J

K (active load)J

K(gain bandwidth product)

Junction Field Effect Transistor(JEFT)J
pJ nJ

Ep- nJ n- pJ F

nJ KEJ F

nJ (n-channel JFET)
KpJ (p-channel JFET)pJ
W

:Source(S)
EpJ nJ F
(S)KIS(Source current)
K(E)

- -

WDrain(D)
(D)KID(Drain current)

K(C)

:Gate(G)
(G)

K(B)

(Drain)

(Drain)

E F

G
(Gate)

EF

(Source)

(p-channel)
p

(Gate)

(n-channel)

(Source)

(JFET)EJ F
pJ JFETEFnJ JFET EF

pJ JFETEJ F

pJ nJ
JFET
KnJ

- -

EF

EF

(JFET)EJ F
nJ JFETEFpJ JFETEF

Operation of the JFET J J

pJ nJ

p J n J
K n J p J
(G)

(S)

ID
IDVDS J

KID

EJ FK

nJ
KVDS(VGS = )
- -

VDS
VPo

ID

G
D

ID

VDS = Vpo

VDS <Vpo

EF

E F

ID

D
VDS > Vpo

EF
.VDS VGS = EJ F
VDS >VpoEF

G
P

VDS =VpoEF

VDS <Vpo EF

J J

JFET Characteristics and Parameters

The Drain CharacteristicCurveJ J J

nJ IDVDS EJ F

VDSKVDSVGS =

VDSKVDSID
ID
- -

IDVPoVDS VDS
VDSIDKIDSS

EJ FEJ F

K(ohmic region)

VPoVDS

VPoID

K(saturation region)EJ F

ID

RD

IDSS

VGS =

ID

D
G
VGS =

VDS

VDD

VPo (VGS = )

E F

V DS

EF
VGS = nJ JFET
EJ F

VGS = JFET E F EF

(Vp)VGS

K VDS
VDSID

KEJ FVGS

- -

VPWPinch-off voltage VP

.IDVDS

VGSVGs(off) :Cutoff voltage VGs(off)

K

ID

ID
RD

VDD

G
VGS

IDSS

ID

VGG

VDS

VGS =

VGS = -V

VGS = -V

VGS = -V

VGS = -V
VGS = VGS(off)

EF

VP (VGS = )

VDS

VP (VGS = -V )

EF

nJ JFET
EJ F

.VGS

VGSJFETEFEF

The Transfer CharacteristicCurveJ J J

VGS VDSID
VGSIDEJ F

KVGSID

- -

ID

IDSS

-VGS

VGS(off)

JFETEJ F

JFET Parameters J J J
VDS

:Drain resistance rd

.MkKVGSID

ID:Transconductance gm
KL {VDSVGS

VDS :The amplification factor

.IDVGS

= gm rd

- -

Metal OxideSemiconductor Field Effect Transistor (MOSFET)

(MOSFET)
(Insulated Gate Field Effect Transistor)

KIGFET
K(Integrated Circuits)

( - )

(Enhancement type)K
K(Depletion type)
The EnhancementMOSFETMOSFETJ J
(Substrate)

(nJ Fp J (PJ F nJ
(Source)

K(SiO) (Drain)
.(Gate)

KEJ F

(Gate)
G

S
(Source)

n+

n+

PJ
Ep-substrate)

(Drain)

(metal)

(Gate)
G

S
(Source)

(Silicon dioxide)
SiO

p+

p+

nJ
En-substrate)

EF

EF
MOSFETEJ F
nJ EFpJ EF
- -

(Drain)

MOSFET J J J

The Enhancement MOSFET Operation

nJ
EJ F
K(VDS = )

p-

(Threshold voltage)K

nJ pJ VT
K(induced channel)

VTVGS

K
EJ FVDS

K VDS ID

IDVDS
K

G (+)

D (+)

n+

n+

SiO

G (+)

n+

n+

PJ
Ep-substrate)

PJ
Ep-substrate)

E F

EF

nJ MOSFETEJ F
VDS > EFVDS = EF

- -

pJ

MOSFETJ J J

Enhancement MOSFET Characteristics

KnJ MOSFET EJ F

EJ F
EJ FKVDS IDVGS
E
F ID

ID, mA

(Ohmic region)

ID, mA

(Saturation region)

VT

VGS, V

EF
E F
J MOSFETEJ F

n
(Drain or Output characteristics)EF
- -

VGS = V

VDS, V

pJ
EJ F
K
The DepletionMOSFETMOSFETJ J

nJ

pJ nJ

pJ
EJ F

KnJ

G (-)

D (+)

n+

n+

SiO

D (+)

n+

n+

(n-channel)nJ
PJ
Ep-substrate)

(n-channel) nJ
PJ
Ep-substrate)

EF

E F

MOSFETEJ F

nJ

MOSFET J J J

The Depletion MOSFET Operation

EJ FnJ

K

(Threshold

KIDvoltage) VT

- -

KID

pJ

K
MOSFETJ J J

Depletion MOSFET Characteristics

EJ F
KnJ
MOSFET

K
EF

ID, mA

ID, mA

VDS = V

IDSS

-
VGS = -

VT
-

+ VGS, V

VGS = +V

KEF

(Enhancement)

(Depletion)

VDS, V

EF
nJ MOSFETEJ F
EF

(Drain or Output characteristics)EF

(Transfer characteristic)EF
- -

pJ
EJ F

MOSFET Circuit SymbolsMOSFETJ J

nJ
MOSFETEJ F
KpJ

(Drain)
D

G
(Gate)

(Substrate)

(Source)

EF EF

EFEF

.nJ MOSFETEJ F

EFEF

KEFEF

- -

KJ
K(JFET) J
KJ
KJFETVGS(off)VPJ
nJ JFETJ
EFgmEFrdEFW J
K
" JFETMOSFET"J
KMOSFETJ
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KMOSFETJ

- -


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W
K
K

K
K

- -

Introduction J
(Thyristor)

(Diac)(Triac)
(power control)
K
(Thyristor)J

KSCR(Silicon Controlled Rectifier)

Anode W
p-n-p-n

Gate (G) Cathode (K)(A)

KEJ FK
(Anode)

A
p

n
G
(Gate)

G
K

p
n

K
(Cathode)

EFEF
EFEFEJ F

--

States of a Thyristor J J
(Forward biased state)W

K(Reverse biased state)

Characteristic Curve of a Thyristor J J

K
JJ

JJ

(Forward leakage current)

KEEJ FAF(Forward off state)

EF IA

IG > IG>

EF IH

IG

EF VRB

VH

IG

IG=

IG<

VAK
VFBo

IG =

EJ F

--

JVFB(Forward breakdown voltage)

KEEJ F BCF(On state)

EJ F

K (on state)(off state)

(Holding voltage) VH
K(Holding current)IH

JJ J
JJ

DF(Reverse leakage current)

KEEJ F

VRB

(Reverse breakdown voltage)

KEEJ FDEF

--

IdealCharacteristic Curve of a Thyristor J J

E F

KEEJ FAF

K

EEJ FCF

KEEJ FBF

IA

VAK

EJ F

--

ToffK
.(On time)Ton(Off time)
Triac J

KEJ F

K
W

TTTT
KTG

TTTT
KTG

G
G
A
T

K
T

p
A

EF

EF

EF

EFEFEFEJ F
--

KEJ F

IG > IG > IGo

IG

IG

IGo=

EF IH

- VB

VH

VB

KEJ F

DiacJ

TTTT
K
--

TTTT
K

KEJ F
n
T

EFEF

EF EF EJ F

EJ F
K IG
K

- VB

VB

EJ F
--

J
J
KJ
J
J
J
TTJ
KJ
KJ
J
TTJ
KJ
KJ

--

p-nJ

p-nJ

p-nJ
J J

J J

J J

Ge SiJ

J J

J J

J J

J J

J
J J

J J

J
J J

J J

EFJ
J J

J J

J J

J
J J

dcdcJ J

J J

J J

J J J

J J

J J J

J J J

dcJ J

EFJ

J J

J J

J J

J
J J

J J

J J J

J J J

J
MOSFETJ J

MOSFET J J J

J J J

J J J
MOSFET

MOSFETJ J

J J J

J J J

J J

J
J J

J J

J J

EF

GOTEVOT appreciates the financial support provided by BAE SYSTEMS