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IRF9530, RF1S9530SM: 12A, 100V, 0.300 Ohm, P-Channel Power Mosfets Features
IRF9530, RF1S9530SM: 12A, 100V, 0.300 Ohm, P-Channel Power Mosfets Features
Features
12A, 100V rDS(ON) = 0.300 Single Pulse Avalanche Energy Rated SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Related Literature - TB334, Guidelines for Soldering Surface Mount Components to PC Boards
Ordering Information
PART NUMBER IRF9530 RF1S9530SM PACKAGE TO-220AB TO-263AB BRAND IRF9530 RF1S9530
Symbol
D
NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in the tape and reel, i.e., RF1S9530SM9A.
Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE DRAIN (FLANGE) GATE SOURCE
JEDEC TO-263A
DRAIN (FLANGE)
4-9
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright Intersil Corporation 1999
IRF9530, RF1S9530SM
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specied IRF9530, RF1S9530SM -100 -100 -12 -7.5 -48 20 75 0.6 500 -55 to 150 300 260 UNITS V V A A A V W W/oC mJ oC
oC oC
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specication is not implied.
Electrical Specications
PARAMETER
TC = 25oC, Unless Otherwise Specied SYMBOL BVDSS VGS(TH) IDSS ID(ON) IGSS rDS(ON) gfs td(ON) tr td(off) tf Qg(TOT) Qgs Qgd CISS COSS CRSS LD Measured From the Modified MOSFET Contact Screw On Tab To Symbol Showing the Center of Die Internal Devices Measured From the Drain Inductances Lead, 6mm (0.25in) From Package to Center of Die
D LD
TEST CONDITIONS ID = -250A, VGS = 0V, (Figure 10) VGS = VDS, ID = -250A VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V, TC= 125oC VDS > ID(ON) x rDS(ON)MAX, VGS = -10V, (Figure 7) VGS = 20V ID = -6.5A, VGS = -10V, (Figures 8, 9) VDS > ID(ON) x rDS(ON) Max, ID = -6.5A (Figure 12) VDD = 50V, ID -12A, RG = 50, VGS = 10V RL = 4.2, (Figures 17, 18) MOSFET Switching Times are Essentially Independent of Operating Temperature VGS = -10V, ID = -12A, VDSS= 0.8 x Rated BVDSS, (Figure 14, 19, 20) Gate Charge is Essentially Independent of Operating Temperature VDS = -25V, VGS = 0V, f = 1MHz, (Figure 11)
UNITS V V A A A nA S ns ns ns ns nC nC nC pF pF pF nH
Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current On-State Drain Current (Note 2) Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Gate to Drain (Miller) Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Drain Inductance
4.5
nH
LS
Measured From The Source Lead, 6mm (0.25in) From Header to Source Bonding Pad
G LS S
7.5
nH
1.67 62.5
oC/W oC/W
4-10
IRF9530, RF1S9530SM
Source to Drain Diode Specications
PARAMETER Continuous Source to Drain Current Pulse Source to Drain Current (Note 2) SYMBOL ISD ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode
G D
MIN -
TYP -
UNITS A A
Source to Drain Diode Voltage (Note 2) Reverse Recovery Time Reverse Recovery Charge NOTES:
TJ = 25oC, ISD = -12A, VGS = 0V, (Figure 13) TJ = 150oC, ISD = -12A, dISD/dt = 100A/s TJ = 150oC, ISD = -12A, dISD/dt = 100A/s
300 1.8
-1.5 -
V ns C
2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width limited by max junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 25V, starting TJ = 25oC, L = 5.2mH, RG = 25, peak IAS = 12A. See Figures 15, 16.
-12.0
-9.6
-7.2
0.6 0.4
-4.8
-2.4
0.2 0 0 25 50 75 100 TC , CASE TEMPERATURE (oC) 125 150 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (oC)
1 THERMAL IMPEDANCE ZJC, NORMALIZED 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE PDM t1 t2 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC + RJA +TC 0.01 10-5 10-4 10-3 10-2 10-1 t 1, RECTANGULAR PULSE DURATION (s) 1 10
4-11
-20 VGS = -9V VGS = -10V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VGS = -8V
-10
100s 1ms OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) TC = 25oC TJ = MAX RATED SINGLE PULSE
10s
-16
-12
-1
10ms 100ms DC
-4
-0.1 -1
-1000
-10
-20
-30
-40
-50
-10 VGS = -8V VGS = -9V VGS = -10V -6 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VGS = -5V -2 VGS = -4V 0 0 -2 -4 -6 -8 -10 VGS = -6V VGS = -7V ID(ON), ON-STATE DRAIN CURRENT (A)
-20
VDS I D(ON) x rDS(ON) PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX -55oC 25oC 125oC
-8
-16
-12
-4
-8
-4
2.2
0.8 ON RESISTANCE ()
1.8
VGS = -10V, ID = -6.5A PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX
0.6
1.4
1.0
0.6
0.2
-40
40
80
120
NOTE: Heating effect of 2s pulse is minimal. FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT
4-12
1000 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD CISS COSS
1.05
600
0.95
400
0.85
200
CRSS
0.75 -40
40
80
120
160
-10
-20
-30
-40
-50
TJ = -55oC
-10
-1.0
TJ = 25oC
PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX -0.1 0 -4 -8 -12 -16 -20 -0.4 -0.6 ID , DRAIN CURRENT (A) -0.8 -1.4 -1.0 -1.2 -1.6 VSD, SOURCE TO DRAIN VOLTAGE (V) -1.8
I D = -12A
-5
4-13
VDD VDD
0V VGS
DUT VGS RG
VDD
+
VDS VGS 0
90%
90%
CURRENT REGULATOR
0 VDS
DUT 12V BATTERY 0.2F 50k 0.3F Qgs D G 0 IG(REF) IG CURRENT SAMPLING RESISTOR S +VDS ID CURRENT SAMPLING RESISTOR 0 DUT VDD Qgd
VGS
Qg(TOT)
IG(REF)
4-14
IRF9530, RF1S9530SM
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