TOSHIBA

TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE

2SD2499

2SD2499
HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV

Unit in mm

High Voltage

: VcbO = 1500 v

..

15.50.5

03.6C

i
'

Low Saturation Voltage : Vqe (sat) - 5 V (Max.)

High Speed
Bult-in Damper Type Collector Metal (Fin) is Fully Covered with Mold Resin.
2 3MAX.
,

: tf = 0.3 jus (Typ.)

f
rH
0 95MAX
.

p
on

5
.

0
.

2
,

MAXIMUM RATINGS (Ta = 250C)

CHARACTERISTIC SYMBOL RATING
1500
600 5

UNIT V V V
A

2
.

1
.

d
+1
LA

00

+-

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

Collector Current Base Current DC Pulse

VCBO VCEO Vebo ic ICP ib PC

9
.

12

3
O

1 BASE
.

2 COLLECTOR
.

6
12

3 EMITTER
.

JEDEC
A

3 50
150
-

Collector Power Dissipation

(Te = 250C)

EIAJ
W

TOSHIBA

2-16E3A

Junction Temperature Storage Temperature Range

Tj Tgtg

oc

Weight : 5.5 g (Typ.)

55-150

oc

EQUIVALENT CIRCUIT

COLLECTOR
BASE o

40

(Typ.) EMITTER

961001EAA1

. TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook.

#The information contained herein is presented only as a guide for the applications of our products. No responsibility
is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.

#The information contained herein is subject to change without notice.

1999-09-02

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TOSHIBA

2SD2499

ELECTRICAL CHARACTERISTICS (Ta = 250C)

CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current
Emitter-Base Breakdown

SYMBOL

TEST CONDITION

MIN.
-

TYP.
-

MAX. UNIT 1

ICBO lEBO Vebo

liFE (!) hFE (2)

Vcb = 1500 V, Ie = 0 Veb = 5V, lc = 0

mA mA V

67 5
8

200
-

Voltage
DC Current Gain Collector-Emitter Saturation
"

lE = 400 m A, Ic = 0

Vce = 5V, IC = 1A Vce = 5V, IC = 4A

25
-

5
-

9 5 V

Voltage

VCE (sat) IC = 4 A, Ib = 0.8 A

Base-Emitter Saturation

Voltage Forward Voltage (Damper Diode) Transition Frequency Collector Output Capacitance

VBE (sat) IC = 4A IB = 0.8A

,
-

1 05
.

13
.

Vf

IF = 6A Vce = 10 V, Ie = 0.1 A Vcb = io v, Ie = o, f = i mhz ICP = 4 A, Ibi (end) = 0.8 A H = 15.75 kHz

16
.

20
.
-

V
MHz

fT
Cob

95
75
.

pF

Switching Time (Fig.l)

Storage Time
Fall Time

tstg tf

11

03
.

06
.

1999-09-02

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TOSHIBA

2SD2499

Fig.1 SWITCHING TIME TEST CIRCUIT

ic
2SC2482
fe
a
O
.

10 juB. 100 juF

IB
TUT
. . .

fe

; 00
' .

ico n 3 a
INPUT ofe
O
co

fe
i-i !
O O a
.

25 jus

i
o
.

O :

fe
a
LO

O Ti /h

63.5

VDD

BASE CURRENT

Base Current Gradient

dlB/dt=

lB

\+lB2
tstg

(A//.S)

COLLECTOR CURRENT

1999-09-02

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TOSHIBA

2SD2499

IC - VCE
COMMON
EMITTER

Ve E - ib
COMMON Te = 25C
>

EMITTER

Te = -25C a

o
>

IC = 6A

t
IB = 0.1 A
O
O

10

12

04
.

0.8

1.2

1.6

20
.

COLLECTOR-EMITTER VOLTAGE

VQE

<V)

BASE CURRENT

Ib

(A)

hpE - IC
COMMON EMITTER

VC E - IB
COMMON EMITTER

VCE = 5V

Te = 25C Te = 100oC
o
>

IC = 6A
s

8
0 03
.

0.1

0.3

0.4

0.8

1.2

1.6

2.0

COLLECTOR CURRENT

1C

(A)

BASE CURRENT

Ib

(A)

ic - Vbe
COMMON EMITTER

ve E - IB
COMMON
EMITTER

Vce = 5V

Te = 100C

Te = 100C /

'

25

IC = 6A
-

25

>

02
.

0.4

0.6

0.8

1.0

1.2

14
.

04
.

0.8

1.2

1.6

20
.

BASE-EMITTER VOLTAGE

Vbe

(V)

BASE CURRENT

Ib

(A)

1999-09-02

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TOSHIBA

2SD2499

rth(j c) - ty
-

PC - Te
INFINITE HEAT SINK

10

se
cu

z
o

\
\
s

\
s

i
01
.

sN

\
Te = 25C (INFINITE HEAT SINK)
CUEVE SHOULD BE APPLIED IN THEEMAL LIMITED AREA

\
g
o u

sk

(SINGLE NONREPETITIVE PULSE)

0 01
.

\
0 20 40 60 80 100 120 140 160

Im

10 m

0.1

10

100

1000

PULSE WIDTH

tw

(s)

CASE TEMPERATURE

Te

(C)

SAFE OPERATING AREA

Ir MAX. (PULSED) *
10us

IC MAX. (PULSED) *
IC MAX.
(CONTINUOUS) 100 ms *

DC OPERATION

Te = 250C

05
.

03
.

01
.

Si
* SINGLE NONREPETITIVE

50 m 30 m

PULSE

Te = 25<'C

I
1000

CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE.

vceo max:
30 100 300

10 m

10

COLLECTOR-EMITTER VOLTAGE

Vce

(V)

1999-09-02

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