Ordering number: EN4285A

No.4285A

2SK2043
N-Channel Silicon MOSFET

SAWO

Ultarahigh-Speed Switching Applications

Features Low ON resistance.

.
.

Ultrahigh-speed switching. High-speed diode built in (tr, = lOOns). Micaless package facilitating easy mounting.
unit

Absolute Mximum Ratings at Ta - 250C Drain-to-Source Voltage Vdss Gate-to-Source Voltage Vgss Drain Current(DC) Id Drain Current(Pulse) Idp Allowable Power Dissipation Pp
Tc=25sC

600 30
2

V
V

A
A W W

8
20
.

25

Channel Temperature Storage Temperature

Tch Tstg

150
-

55 to +150

0C 0C
max

Electrical Characteristics at Ta = 250C D-S Breakdown Voltage V(BR)DSS ID = 10mA,VGS=0

min
600

typ

unit

V
10
.

Zero-Gate Voltage
Drain Current

Idss

VDs=480V,VGS=0
VGS=30V,VDS=0 VDS = 10V,ID = lmA VDs = 10V,ID=lA ID=1A,VGS=10V

mA nA V

Gate-to-Source Leakage Current Iqss CutoffVoltage VosofO

Forward Transfer Admita nce I I

100
20
.

30
.

08
.

1.5
32
.

S
43
.

Static Drain-to-Source
v

RDS(on)
Ciss Cosa Craa td(on)
tr

ON-State Reaistance

InputCapacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time

Rise Time

VDS=20V,f=lMHz VDs=20V,f=lMHz VDS=20Vlf=lMHz See apecified Test Circuit.

//
//

400 55
15

pF pF pF
ns
ns

10
12 65

Turn-OFF Delay Time

FallTime

td(ofo
tf

ns
ns
.

//

40

V 15 IS=2A,VGS = 0 Diode Forward Voltage Vgo 100 ns Is=2A,di/dt=100A/ia Diode Reverse Recovery Time tr, (Note) Be careful in handling the 2SK2043 becauae it has no protection diode between gate and aource.

Switching Time Test Circuit

VdD=200V
Vin

Package Dimensions 2078B

(unit: mm)

,s

1S,

10V R ov
Vin PW-= 1 M8

ID=1A

RU=200Q
-o

o c
.

So.sx

V0UT

2SK2043
P G
.

50a

1; Gate 2: Drain 3: Source

SANYO: TO-220FI(LS)

SAN YO Electric Co.,Ltd. Semiconductor Business Headquarters

TOKYO OFFICE Tokyo Bldg , 1-10,1 Chome, Ueno, Taito-ku.TOKYO, 110 JAPAN
72597TS(KOTO)/51193TH(KOTO) AX-9260 No.4285-1/3

2SK2043
Id VDs
3 6
.

Id
Vds= 10V

Vos
Tc=- 250C
.

3 2
.

<
5 5V
.

2e
-

I
Q
i-i

24
.

>

>

2.0

5 0V
.

i-

S 1.6
O

4 5V
.

I"
0.8 04
.

4 0V
.

1 i
/
4
.

l t

25 C

750C

3 5V
.

12

16

0 20

10

12

14

Drain-to-Source Voltage,VDg - V

Gate-to-Source Voltage,VGS - V

Yfs I
I
ja

- Id
V DS = 10V

RDS(on) - VGs
Te = 250C

r
E
o
.

lD = 2 0A
.

en 5
q .2
0 5A
.

/ 0A
4
-

d a

a
q

2 t

Ioo

w O

6-

i
2 4 6 8 10 12
14

DrainCurrent(ID - A

RDS(on)
1d =
Ci

- Te

Gate-to-Source Voltage,VGS - V Id - Te
V 08 = 10V V GS = 10V

1A

w P5

ll
.

H
a K

c
'

Q "3

a *

I-

m o

60 -40 -2 0

20

40

60

80

100

120 140

160

60 -40

-20

20

40

60

80

100

120 140

160

Case Temperature,Te - "C

Case Temperature.Tc - "C

VGS(off) - Te
V DS = 10V = linA
> I 10

IS

"

Vsd

10
.

// /
1

/ /

/ //
,

///

> fa
o

M 0.1

m
f l/
1 1 l

1
1
-

"/

60 -40 -20

20

40

60

80

100

120 140 160

0 2
.

0-4

0-6

0-6

1.0

1.2

1-4

Case Teraperature.Tc - "C

Diode Forward Voltage,VsD - V

No.4285-2/3

2SK2043 Ciss, Co$s, Crss Vos

Vgs = 0V
f= 1MHz
9 t 1
e

SW Time
3 2

lD

103
7

5
w oT 3
2

S!S!!>
i

V
O
'

|
1

10
7

td{< n)
VDD = UUV

VGS = 10V
PW=lns
DCSO.5%

12

16

20

21

26

32

Drain-to-Source Voltage, VDS - V

ASO
24

Drain Current, ID - A Pd - Ta

ES
l

\
\
*<

S 1.2
0)

I
Operation in this rea is
_

lmitedbyRDS(on)

I
Tc = 25C

\
\
i0

i Single pulse f 3 5 7 {q
~

\
40 66

23 Pq Te

bT co

Bo

ico

t:O

140

16

Drain-to-Source VoUage,VDS - V
28

Ambient Temperature.Ta - 'C

1
c

n
20

3
o
'

N
\

i
i*
o

16

12

\
\
,

l-M

1
w
o
l

\ \ \
20 40 60 80 100 120 U0 160

<

CaseTemperature.Tc - C No producs desoribed or contained herein are intended for use in surgical impiants, life-support systems,

aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of whioh may directly or indireclly cause injury, death or properly loss.

Anyone purchasing any producs desoribed or contained herein for an above-mentioned use shali: Accepl fuil responsbility and indemnify and defend SAN YO ELECTRIC 00., LTD.. its affiliates,
subsidiarios and distributors and all Iheir officers and employees, oinlly and severaliy, against any and ai! claims and litigation and all damages, cos and expenses associated with such use;

Not impose any responsibility for any fautt or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC 00., LTD, its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severaliy.

I Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein s aoourale and reliable, but no guranteos are made or implied regarding its use or any infringements of intellectual properly rights or other rights of
third parties. This ctalos provides information as of July, 1997, Specifications and information herein are subject to
chango without noti ce.

No.4285-3/3