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Introduction To Cmos Vlsi Design
Introduction To Cmos Vlsi Design
SRAM
Outline
Memory Arrays SRAM Architecture SRAM Cell Decoders Column Circuitry Multiple Ports Serial Access Memories
SRAM
Slide 2
Memory Arrays
Memory Arrays
Random Access Memory Serial Access Memory Content Addressable Memory (CAM) Queues
Shift Registers
Mask ROM
Flash ROM
SRAM
Slide 3
Array Architecture
2n words of 2m bits each If n >> m, fold by 2k into fewer rows of more columns
wordlines bitline conditioning bitlines
row decoder
Good regularity easy to design Very high density if good cells are used
SRAM CMOS VLSI Design Slide 4
SRAM
Slide 5
6T SRAM Cell
Cell size accounts for most of array size Reduce cell size at expense of complexity 6T SRAM Cell Used in most commercial chips Data stored in cross-coupled inverters Read: bit Precharge bit, bit_b word Raise wordline Write: Drive data onto bit, bit_b Raise wordline
SRAM CMOS VLSI Design
bit_b
Slide 6
SRAM Read
Precharge both bitlines high Then turn on wordline One of the two bitlines will be pulled down by the cell Ex: A = 0, A_b = 1 bit discharges, bit_b stays high But A bumps up slightly Read stability A must not flip
bit bit_b word N2 P1 P2 N4 A A_b N1 N3
A_b
bit_b
1.5
1.0
word
bit
0.5
A
0.0 0 100 200 300 time (ps) 400 500 600
SRAM
Slide 7
SRAM Read
Precharge both bitlines high Then turn on wordline One of the two bitlines will be pulled down by the cell Ex: A = 0, A_b = 1 bit discharges, bit_b stays high But A bumps up slightly Read stability A must not flip N1 >> N2
bit bit_b word N2 P1 P2 N4 A A_b N1 N3
A_b
bit_b
1.5
1.0
word
bit
0.5
SRAM
Slide 8
SRAM Write
Drive one bitline high, the other low Then turn on wordline Bitlines overpower cell with new value Ex: A = 0, A_b = 1, bit = 1, bit_b = 0 Force A_b low, then A rises high Writability Must overpower feedback inverter
bit_b
N4
A_b
1.5
A bit_b
1.0
0.5
word
0.0 0 100 200 300 400 500 600 700 time (ps)
SRAM
Slide 9
SRAM Write
Drive one bitline high, the other low Then turn on wordline Bitlines overpower cell with new value Ex: A = 0, A_b = 1, bit = 1, bit_b = 0 Force A_b low, then A rises high Writability Must overpower feedback inverter N2 >> P1
bit_b
N4
A_b
1.5
A bit_b
1.0
0.5
word
0.0 0 100 200 300 400 500 600 700 time (ps)
SRAM
Slide 10
SRAM Sizing
High bitlines must not overpower inverters during reads But low bitlines must write new value into cell
bit word weak med A strong A_b med bit_b
SRAM
Slide 11
Write
Bitline Conditioning 2 More Cells word_q1
bit_b_v1f
bit_b_v1f
bit_v1f
bit_v1f
SRAM Cell
SRAM Cell
H out_v1r
write_q1
data_s1
SRAM
Slide 12
SRAM Layout
Cell size is critical: 26 x 45 l (even smaller in industry) Tile cells sharing VDD, GND, bitline contacts
GND VDD
WORD
Cell boundary
SRAM
Slide 13
Decoders
n:2n decoder consists of 2n n-input AND gates One needed for each row of memory Build AND from NAND or NOR gates Static CMOS
A1 A0 A1
Pseudo-nMOS
A0
1 A1 A0
1 1 1
8 4
word0
word
word1 word2 word3
1/2 A0 A1 1 1
4 2
16 8
word
SRAM
Slide 14
Decoder Layout
Decoders must be pitch-matched to SRAM cell Requires very skinny gates
A3 VDD A3 A2 A2 A1 A1 A0 A0
word
SRAM
Slide 15
Large Decoders
For n > 4, NAND gates become slow Break large gates into multiple smaller gates
A3 A2 A1 A0
word0
word1
word2
word3
word15
SRAM
Slide 16
Predecoding
Many of these gates are redundant Factor out common gates into predecoder Saves area Same path effort
A3 A2 A1 A0 predecoders 1 of 4 hot predecoded lines word0 word1
word2 word3
word15
SRAM
Slide 17
Column Circuitry
Some circuitry is required for each column Bitline conditioning Sense amplifiers Column multiplexing
SRAM
Slide 18
Bitline Conditioning
Precharge bitlines high before reads
bit bit_b
SRAM
Slide 19
Sense Amplifiers
Bitlines have many cells attached Ex: 32-kbit SRAM has 256 rows x 128 cols 128 cells on each bitline tpd (C/I) DV Even with shared diffusion contacts, 64C of diffusion capacitance (big C) Discharged slowly through small transistors (small I) Sense amplifiers are triggered on small voltage swing (reduce DV)
SRAM CMOS VLSI Design Slide 20
sense_b bit
P1 N1
P2 N2 N3 sense bit_b
SRAM
Slide 21
regenerative feedback
sense
sense_b
SRAM
Slide 22
Twisted Bitlines
Sense amplifiers also amplify noise Coupling noise is severe in modern processes Try to couple equally onto bit and bit_b Done by twisting bitlines
b0 b0_b b1 b1_b b2 b2_b b3 b3_b
SRAM
Slide 23
Column Multiplexing
Recall that array may be folded for good aspect ratio Ex: 2 kword x 16 folded into 256 rows x 128 columns Must select 16 output bits from the 128 columns Requires 16 8:1 column multiplexers
SRAM
Slide 24
SRAM
Slide 25
B0 B1
B2 B3
SRAM
Slide 26
A0 A0 write0_q1 2 write1_q1
data_v1
SRAM
Slide 27
Multiple Ports
We have considered single-ported SRAM One read or one write on each cycle Multiported SRAM are needed for register files Examples: Multicycle MIPS must read two sources or write a result on some cycles Pipelined MIPS must read two sources and write a third result each cycle Superscalar MIPS must read and write many sources and results each cycle
SRAM CMOS VLSI Design Slide 28
Dual-Ported SRAM
Simple dual-ported SRAM Two independent single-ended reads Or one differential write
bit wordA wordB bit_b
Do two reads and one write by time multiplexing Read during ph1, write during ph2
SRAM CMOS VLSI Design Slide 29
Multi-Ported SRAM
Adding more access transistors hurts read stability Multiported SRAM isolates reads from state node Single-ended design minimizes number of bitlines
bA bB bC wordA wordB wordC wordD wordE wordF wordG bD bE bF bG
write circuits
read circuits
SRAM
Slide 30
SRAM
Slide 31
Shift Register
Shift registers store and delay data Simple design: cascade of registers Watch your hold times!
clk Din 8 Dout
SRAM
Slide 32
counter
reset
00...00 11...11
counter
Dout
SRAM
Slide 33
SR32
delay5
SR16
SR8
SR4
SR2
SR1
Din
Dout
delay4
delay3
delay2
delay1
delay0
SRAM
Slide 34
clk Sin P0 P1 P2 P3
SRAM
Slide 35
P0 shift/load clk
P1
P2
P3
Sout
SRAM
Slide 36
Queues
Queues allow data to be read and written at different rates. Read and write each use their own clock, data Queue indicates whether it is full or empty Build with SRAM and read/write counters (pointers)
SRAM
Slide 37
SRAM
Slide 38