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Caracteristicas Del DIAC
Caracteristicas Del DIAC
DB3/DC34/DB4/DB6
SILICON BIDIRECTIONAL DIAC
JF's DB3/DC34/DB4/DB6 are bi-directional trigged diode designed to operate in conjunction with Triacs and SCR's
Pc
150
ITRM
TSTG/TJ
2.0
2.0
2.0
1.6
ELECTRCAL CHARACTERISTICS
Value Symbols Parameters Test Conditions DB3 c=22nF(Note 2) VBO Breakover Voltage(Note 2) See diagram1 Min Typ Max |+VBO||-VBO| | Vo IBO tr IB V| Dynamic Breakover Voltage(Note 1) Output Voltage(Note 1) Breakover Current(Note 1) Rise Time(Note 1) Leakage Current(Note 1) Breakover Voltage Symmetry c=22nF(Note 2) See diagram1 I=(IBO to IF=10mA) See diagram1 See diagram2 c=22nF(Note 2) See Diagram 3 Min Max Typ Max 5 100 1.5 10 V A S A Min 5 10 V Max 28 32 36 DC34 30 34 38 3 DB4 35 40 45 DB6 56 60 70 4 V V Units
Notes: 1. Electrical characteristics applicable in both forward and reverse directions. 2. Connected in parallel with the devices.
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CE
CHENYI ELECTRONICS
DB3/DC34/DB4/DB6
SILICON BIDIRECTIONAL DIAC
Ip=0.5A
FIG.1-Power disspation versus ambient temperature(maximum values) FIG.2-Relative variation of VBO versus juntion temperature(typical values)
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