Air Liquide Samples

Opila Lab
AES
Analysis Conditions
Source
Beam Voltage: 3.0keV
Surveys
Pre-Survey: Surface scan (50 600 eV) done before depth profile
Investigate for all elements on surface
Post-Survey: Surface scan (50 600 eV) done after depth profile
Investigate for all elements after depth profile
Depth Profile
Investigate for Si/N/O/C until only O stabilizes
Ion Gun
Argon Sputter
Raster 3x3mm
2


Beam Voltage: 3.0keV
SiO
2
sputter rate: 7.14 nm/min
BL 60_2
SiN on Si
Auger Full scan depth profile (1nm steps). Scan for: Si/N/O/C
Estimated thickness: 95nm

-1200
-1000
-800
-600
-400
-200
0
200
400
600
800
50 150 250 350 450 550
N
(
E
)

Kinetic Energy (eV)
Pre-Survey
N
O
Si
C
Depth Profile
0
10
20
30
40
50
60
70
80
90
100
0 5 10 15 20 25 30
A
t
o
m
i
c

C
o
n
c
e
n
t
r
a
t
i
o
n

(
%
)

Time (minutes)
C1
N1
O1
Si1
-7000
-6000
-5000
-4000
-3000
-2000
-1000
0
1000
2000
50 150 250 350 450 550
N
(
E
)

Kinetic Energy (eV)
Post-Survey
Si
BL 60_4
SiN on Si
Auger Full scan depth profile (1nm steps). Scan for: Si/N/O/C
Estimated thickness: 50nm

-1200
-1000
-800
-600
-400
-200
0
200
400
600
800
50 150 250 350 450 550
N
(
E
)

Kinetic Energy (eV)
Pre-Survey
N
O
C
Si
Depth Profile
0
10
20
30
40
50
60
70
80
90
0 5 10 15 20 25 30
A
t
o
m
i
c

C
o
n
e
n
t
r
a
t
i
o
n

(
%
)

Time (minutes)
C1
N1
O1
Si1
-1000
-800
-600
-400
-200
0
200
50 150 250 350 450 550
N
(
E
)

Kinetic Energy (eV)
Post-Survey
Si
BL 120_2
SiN on Si
Auger Full scan depth profile (1nm steps). Scan for: Si/N/O/C
Estimated thickness: 90nm

-1400
-1200
-1000
-800
-600
-400
-200
0
200
400
600
50 150 250 350 450 550
N
(
E
)

Kinetic Energy (eV)
Pre-Survey
N
O
C
Si
Depth Profile
0
10
20
30
40
50
60
70
80
90
100
0 5 10 15 20 25 30 35 40
A
t
o
m
i
c

C
o
n
c
e
n
t
r
a
t
i
o
n

(
%
)

Time (seconds)
C1
N1
O1
Si1
-5000
-4000
-3000
-2000
-1000
0
1000
2000
50 150 250 350 450 550
N
(
E
)

Kinetic Energy (eV)
Post-Survey
Si
BL 120_4
SiN on Si
Auger Full scan depth profile (1nm steps). Scan for: Si/N/O/C
Estimated thickness: 160nm

-700
-600
-500
-400
-300
-200
-100
0
100
200
300
50 150 250 350 450 550
N
(
E
)

Kinetic Energy (eV)
Pre-Survey
N
O
C
Si
Depth Profile
0
2000
4000
6000
8000
10000
12000
14000
0 5 10 15 20
A
t
o
m
i
c

C
o
n
c
e
n
t
r
a
t
i
o
n

(
%
)

Time (minutes)
C1
N1
O1
Si1
The sample had actually sputtered for 43 minutes (without
sputtering through), but the software cannot load all the data,
or convert it to atomic concentration. The problem may be that
there are too many counts to do so.