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2002 Fairchild Semiconductor Corporation

www.fairchildsemi.com
Rev.1.0.5
Features
Precision Fixed Operating Frequency (100/67/50kHz)
Low Start-up Current(Typ. 100uA)
Pulse by Pulse Current Limiting
Over Current Protection
Over Voltage Protection (Min. 25V)
Internal Thermal Shutdown Function
Under Voltage Lockout
Internal High Voltage Sense FET
Auto-Restart Mode
Applications
SMPS for VCR, SVR, STB, DVD & DVCD
SMPS for Printer, Facsimile & Scanner
Adaptor for Camcorder
Description
The Fairchild Power Switch(FPS) product family is specially
designed for an off-line SMPS with minimal external
components. The Fairchild Power Switch(FPS) consists of a
high voltage power SenseFET and a current mode PWM IC.
Included PWM controller integrates the fixed frequency
oscillator, the under voltage lock-out, the leading edge
blanking, the optimized gate turn-on/turn-off driver, the
thermal shutdown protection, the over voltage protection,
and the temperature compensated precision current sources
for the loop compensation and the fault protection circuitry.
Compared to a discrete MOSFET and a PWM controller or
an RCCsolution, a Fairchild Power Switch(FPS) can reduce
the total component count, design size and weight and at the
same time increase efficiency, productivity, and system
reliability. It has a basic platform well suited for the cost
effective design in either a flyback converter or a forward
converter
Internal Block Diagram
#3 VCC
32V
5A
9V
2.5R
1R
1mA
0.1V
+

OVER VOLTAGE S/D


+

7.5V
27V
Thermal S/D
S
R
Q
Power on reset
+

L.E.B
S
R
Q
OSC
5V
Vref
Internal
bias
Good
logic
SFET
#2 DRAIN
#1 GND
#4 FB
(*#3 VCC)
(*#4 FB)
(*#1.6.7.8 DRAIN)
(*#2 GND)
*Asterisk - KA5M0365RN, KA5L0365RN
KA5x 03x x -SERI ES
KA5H0365R, KA5M0365R, KA5L0365R, KA5M0365RN,
KA5L0365RN, KA5H0380R, KA5M0380R, KA5L0380R
Fai r c hi l d Power Sw i t c h(FPS)
TO-220F-4L
1. GND 2. Drain 3. VCC 4. FB
1
8-DIP
1.6.7.8 Drain
2. GND
3. VCC
4. FB 5. NC
KA5X03XX-SERIES
2
Absolute Maximum Ratings
(Ta=25C, unless otherwise specified)
Note:
1. Repetitive rating: Pulse width limited by maximum junction temperature
2. L = 51mH, starting Tj = 25C
3. L = 13H, starting Tj = 25C
Characteristic Symbol Value Unit
KA5H0365R, KA5M0365R, KA5L0365R
Maximum Drain Voltage VD,MAX 650 V
Drain-Gate Voltage (RGS=1M) VDGR 650 V
Gate-Source (GND) Voltage VGS 30 V
Drain Current Pulsed
(1)
IDM 12.0 ADC
Continuous Drain Current (TC=25C) ID 3.0 ADC
Continuous Drain Current (TC=100C) ID 2.4 ADC
Single Pulsed Avalanche Energy
(2)
EAS 358 mJ
Maximum Supply Voltage VCC,MAX 30 V
Analog Input Voltage Range VFB -0.3 to VSD V
Total Power Dissipation
PD 75 W
Derating 0.6 W/C
Operating Junction Temperature. TJ +160 C
Operating Ambient Temperature. TA -25 to +85 C
Storage Temperature Range. TSTG -55 to +150 C
KA5H0380R, KA5M0380R, KA5L0380R
Maximum Drain Voltage VD,MAX 800 V
Drain-Gate Voltage (RGS=1M) VDGR 800 V
Gate-Source (GND) Voltage VGS 30 V
Drain Current Pulsed
(1)
IDM 12.0 ADC
Continuous Drain Current (TC=25C) ID 3.0 ADC
Continuous Drain Current (TC=100C) ID 2.1 ADC
Single Pulsed Avalanche Energy
(2)
EAS 95 mJ
Maximum Supply Voltage VCC,MAX 30 V
Analog Input Voltage Range VFB -0.3 to VSD V
Total Power Dissipation
PD 75 W
Derating 0.6 W/C
Operating Junction Temperature. TJ +160 C
Operating Ambient Temperature. TA -25 to +85 C
Storage Temperature Range. TSTG -55 to +150 C
KA5X03XX-SERIES
3
Absolute Maximum Ratings
(Ta=25C, unless otherwise specified)
Note:
1. Repetitive rating: Pulse width limited by maximum junction temperature
2. L = 51mH, starting Tj = 25C
3. L = 13H, starting Tj = 25C
Characteristic Symbol Value Unit
KA5M0365RN, KA5L0365RN
Maximum Drain Voltage VD,MAX 650 V
Drain-Gate Voltage (RGS=1M) VDGR 650 V
Gate-Source (GND) Voltage VGS 30 V
Drain Current Pulsed
(1)
IDM 12.0 ADC
Continuous Drain Current (Ta=25C) ID 0.42 ADC
Continuous Drain Current (Ta=100C) ID 0.28 ADC
Single Pulsed Avalanche Energy
(2)
EAS 127 mJ
Maximum Supply Voltage VCC,MAX 30 V
Analog Input Voltage Range VFB -0.3 to VSD V
Total Power Dissipation
PD 1.56 W
Derating 0.0125 W/C
Operating Junction Temperature. TJ +160 C
Operating Ambient Temperature. TA -25 to +85 C
Storage Temperature Range. TSTG -55 to +150 C
KA5X03XX-SERIES
4
Electrical Characteristics (SenseFET Part)
(Ta = 25C unless otherwise specified)
Note:
1. Pulse test: Pulse width 300S, duty 2%
2.
Parameter Symbol Condition Min. Typ. Max. Unit
KA5H0365R, KA5M0365R, KA5L0365R
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=50A 650 - - V
Zero Gate Voltage Drain Current IDSS
VDS=Max. Rating, VGS=0V - - 50 A
VDS=0.8Max. Rating,
VGS=0V, TC=125C
- - 200 A
Static Drain-Source on Resistance
(Note)
RDS(ON) VGS=10V, ID=0.5A - 3.6 4.5
Forward Transconductance
(Note)
gfs VDS=50V, ID=0.5A 2.0 - - S
Input Capacitance Ciss
VGS=0V, VDS=25V,
f=1MHz
- 720 -
pF Output Capacitance Coss - 40 -
Reverse Transfer Capacitance Crss - 40 -
Turn On Delay Time td(on) VDD=0.5BVDSS, ID=1.0A
(MOSFET switching
time is essentially
independent of
operating temperature)
- 150 -
nS
Rise Time tr - 100 -
Turn Off Delay Time td(off) - 150 -
Fall Time tf - 42 -
Total Gate Charge
(Gate-Source+Gate-Drain)
Qg
VGS=10V, ID=1.0A,
VDS=0.5BVDSS (MOSFET
switching time is essentially
independent of
operating temperature)
- - 34
nC
Gate-Source Charge Qgs - 7.3 -
Gate-Drain (Miller) Charge Qgd - 13.3 -
KA5H0380R, KA5M0380R, KA5L0380R
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=50A 800 - - V
Zero Gate Voltage Drain Current IDSS
VDS=Max. Rating, VGS=0V - - 250 A
VDS=0.8Max. Rating,
VGS=0V, TC=125C
- - 1000 A
Static Drain-Source on Resistance
(Note)
RDS(ON) VGS=10V, ID=0.5A - 4.0 5.0
Forward Transconductance
(Note)
gfs VDS=50V, ID=0.5A 1.5 2.5 - S
Input Capacitance Ciss
VGS=0V, VDS=25V,
f=1MHz
- 779 -
pF Output Capacitance Coss - 75.6 -
Reverse Transfer Capacitance Crss - 24.9 -
Turn On Delay Time td(on) VDD=0.5BVDSS, ID=1.0A
(MOSFET switching
time is essentially
independent of
operating temperature)
- 40 -
nS
Rise Time tr - 95 -
Turn Off Delay Time td(off) - 150 -
Fall Time tf - 60 -
Total Gate Charge
(Gate-Source+Gate-Drain)
Qg
VGS=10V, ID=1.0A,
VDS=0.5BVDSS (MOSFET
switching time is
essentially independent of
operating temperature)
- - 34
nC
Gate-Source Charge Qgs - 7.2 -
Gate-Drain (Miller) Charge
Qgd - 12.1 -
S
1
R
---- =
KA5X03XX-SERIES
5
Electrical Characteristics (SenseFET Part)
(Ta = 25C unless otherwise specified)
Note:
1. Pulse test: Pulse width 300S, duty 2%
2.
Parameter Symbol Condition Min. Typ. Max. Unit
KA5M0365RN, KA5L0365RN
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=50A 650 - - V
Zero Gate Voltage Drain Current IDSS
VDS=Max. Rating, VGS=0V - - 50 A
VDS=0.8Max. Rating,
VGS=0V, TC=125C
- - 200 A
Static Drain-Source on Resistance
(Note)
RDS(ON) VGS=10V, ID=0.5A - 3.6 4.5
Forward Transconductance
(Note)
gfs VDS=50V, ID=0.5A 2.0 - - S
Input Capacitance Ciss
VGS=0V, VDS=25V,
f=1MHz
- 314.9 -
pF Output Capacitance Coss - 47 -
Reverse Transfer Capacitance Crss - 9 -
Turn On Delay Time td(on) VDD=0.5BVDSS, ID=1.0A
(MOSFET switching
time is essentially
independent of
operating temperature)
- 11.2 -
nS
Rise Time tr - 34 -
Turn Off Delay Time td(off) - 28.2 -
Fall Time tf - 32 -
Total Gate Charge
(Gate-Source+Gate-Drain)
Qg
VGS=10V, ID=1.0A,
VDS=0.5BVDSS (MOSFET
switching time is
essentially independent of
operating temperature)
11.93
nC
Gate-Source Charge Qgs - 1.95 -
Gate-Drain (Miller) Charge Qgd 6.85
S
1
R
---- =
KA5X03XX-SERIES
6
Electrical Characteristics (Control Part) (Continued)
(Ta = 25C unless otherwise specified)
Note:
1. These parameters, although guaranteed, are not 100% tested in production
2. These parameters, although guaranteed, are tested in EDS(water test) process
Characteristic Symbol Test condition Min. Typ. Max. Unit
UVLO SECTION
Start Threshold Voltage VSTART VFB=GND 14 15 16 V
Stop Threshold Voltage VSTOP VFB=GND 8.4 9 9.6 V
OSCILLATOR SECTION
Initial Accuracy FOSC
KA5H0365R
KA5H0380R
90 100 110 kHz
Initial Accuracy FOSC
KA5M0365R
KA5M0365RN
KA5M0380R
61 67 73 kHz
Initial Accuracy FOSC
KA5L0365R
KA5L0365RN
KA5L0380R
45 50 55 kHz
Frequency Change With Temperature
(2)
- -25CTa+85C - 5 10 %
Maximum Duty Cycle Dmax
KA5H0365R
KA5H0380R
62 67 72 %
Maximum Duty Cycle Dmax
KA5M0365R
KA5M0365RN
KA5M0380R
KA5L0365R
KA5L0365RN
KA5L0380R
72 77 82 %
FEEDBACK SECTION
Feedback Source Current IFB Ta=25C, 0V<Vfb<3V 0.7 0.9 1.1 mA
Shutdown Feedback Voltage VSD Vfb>6.5V 6.9 7.5 8.1 V
Shutdown Delay Current Idelay Ta=25C, 5VVfbVSD 4 5 6 A
REFERENCE SECTION
Output Voltage
(1)
Vref Ta=25C 4.80 5.00 5.20 V
Temperature Stability
(1)(2)
Vref/T -25CTa+85C - 0.3 0.6 mV/C
CURRENT LIMIT(SELF-PROTECTION)SECTION
Peak Current Limit IOVER Max. inductor current 1.89 2.15 2.41 A
PROTECTION SECTION
Over Voltage Protection VOVP VCC>24V 25 27 29 V
Thermal Shutdown Temperature (Tj)
(1)
TSD - 140 160 - C
TOTAL STANDBY CURRENT SECTION
Start-up Current ISTART VCC=14V - 100 170 A
Operating Supply Current
(Control Part Only)
IOP VCC<28 - 7 12 mA
KA5X03XX-SERIES
7
Typical Performance Characteristics(SenseFET part)
(KA5H0365R, KA5M0365R, KA5L0365R)
1 10
0.1
1
10
@Notes:
1. 300sPulseTest
2. T
C
= 25
o
C
V
GS
Top: 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
Bottom:4.5V
I
D
,

D
r
a
i
n

C
u
r
r
e
n
t

[
A
]
V
DS
, Drain-Source Voltage [V]
2 4 6 8 10
0.1
1
10
@Notes:
1. V
DS
=30V
2. 300sPulseTest
-25
o
C
25
o
C
150
o
C
I
D
,

D
r
a
i
n

C
u
r
r
e
n
t

[
A
]
V
GS
, Gate-Source Voltage [V]
0 1 2 3 4 5
0
1
2
3
4
5
6
7
@Note : Tj=25!
Vgs=10V
Vgs=20V
R
D
S
(
o
n
)

,

[
"
]
D
r
a
i
n
-
S
o
u
r
c
e

O
n
-
R
e
s
i
s
t
a
n
c
e
I
D
,Drain Current [A]
0.4 0.6 0.8 1.0 1.2
0.01
0.1
1
@Notes:
1. VGS=0V
2. 300sPulseTest
25
o
C 150
o
C
I
D
R
,

R
e
v
e
r
s
e

D
r
a
i
n

C
u
r
r
e
n
t

[
A
]
V
SD
, Source-Drain Voltage [V]
10
0
10
1
0
100
200
300
400
500
600
700
C
rss
C
oss
C
iss
C
iss
=C
gs
+C
gd
(C
ds
=shorted)
C
oss
=C
ds
+C
gd
C
rss
=C
gd
C
a
p
a
c
i
t
a
n
c
e

[
p
F
]
V
DS
, Drain-Source Voltage [V]
0 5 10 15 20 25
0
2
4
6
8
10
V
DS
=520V
V
DS
=320V
V
DS
=130V
@Note: I
D
=3.0A
V
G
S
,
G
a
t
e
-
S
o
u
r
c
e

V
o
l
t
a
g
e
[
V
]
Q
G
,Total Gate Charge [nC]
Figure 1. Output Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance vs. Drain Current Figure 4. Source-Drain Diode Forward Voltage
Figure 5. Capacitance vs. Drain-Source Voltage Figure 6. Gate Charge vs. Gate-Source Voltage
KA5X03XX-SERIES
8
Typical Performance Characteristics (Continued)
-50 0 50 100 150
0.8
0.9
1.0
1.1
1.2
@Notes:
1. V
GS
= 0V
2. I
D
= 250A
T
J
, Junction Temperature [
o
C]
B
V
D
S
S
,

(
N
o
r
m
a
l
i
z
e
d
)
D
r
a
i
n
-
S
o
u
r
c
e

B
r
e
a
k
d
o
w
n

V
o
l
t
a
g
e
-50 0 50 100 150
0.0
0.5
1.0
1.5
2.0
2.5
@Notes:
1. V
GS
= 10V
2. I
D
= 1.5A
T
J
, Junction Temperature [
o
C]
R
D
S
(o
n
) ,

(
N
o
r
m
a
l
i
z
e
d
)
D
r
a
i
n
-
S
o
u
r
c
e

O
n
-
R
e
s
i
s
t
a
n
c
e
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
10
2
10 s
DC
100 s
1 ms
10 ms
@ Notes :
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
Operation in This Area
is Limited by R
DS(on)
I
D

,

D
r
a
i
n

C
u
r
r
e
n
t


[
A
]
V
DS
, Drain-Source Voltage [V]
25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
I
D
,

D
r
a
i
n

C
u
r
r
e
n
t

[
A
]
T
C
, Case Temperature [
o
C]

10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
single pulse
0.2
0.1
0.01
0.02
0.05
D=0.5
@ Notes :
1. Z
JC
(t)=1.25
o
C/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
-T
C
=P
DM
*Z
JC
(t)
Z

J
C
(
t
)

,


T
h
e
r
m
a
l

R
e
s
p
o
n
s
e
t
1
, Square Wave Pulse Duration [sec]
Figure 7. Breakdown Voltage vs. Temperature Figure 8. On-Resistance vs. Temperature
Figure 9. Max. Safe Operating Area Figure 10. Max. Drain Current vs. Case Temperature
Figure 11. Thermal Response
KA5X03XX-SERIES
9
Typical Performance Characteristics (Continued)
(KA5H0380R, KA5M0380R, KA5L0380R)
10
0
10
1
10
-1
10
0
10
1
@Notes:
1. 300sPulseTest
2. T
C
=25
o
C
V
GS
Top: 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
Bottom:4.5V
I
D
,

D
r
a
i
n

C
u
r
r
e
n
t

[
A
]
V
DS
, Drain-Source Voltage [V]
2 4 6 8 10
10
-1
10
0
10
1
@Notes:
1. V
DS
=30V
2. 300sPulseTest
-25
o
C 25
o
C
150
o
C
I
D
,

D
r
a
i
n

C
u
r
r
e
n
t

[
A
]
V
GS
, Gate-Source Voltage [V]
0.4 0.6 0.8 1.0
0.1
1
10
@Notes:
1. V
GS
=0V
2. 300sPulseTest
25
o
C
150
o
C
I
D
R
,

R
e
v
e
r
s
e

D
r
a
i
n

C
u
r
r
e
n
t

[
A
]
V
SD
, Source-Drain Voltage [V]
10
0
10
1
0
100
200
300
400
500
600
700
800
900
1000
C
rss
C
oss
C
iss
C
iss
=C
gs
+C
gd
(C
ds
=shorted)
C
oss
=C
ds
+C
gd
C
rss
=C
gd
C
a
p
a
c
i
t
a
n
c
e

[
p
F
]
V
DS
, Drain-Source Voltage [V]
0 5 10 15 20 25 30
0
2
4
6
8
10
@Note: I
D
=3.0A
V
DS
=640V
V
DS
=400V
V
DS
=160V
V
G
S
,
G
a
t
e
-
S
o
u
r
c
e

V
o
l
t
a
g
e
[
V
]
Q
G
,Total Gate Charge [nC]
0 1 2 3 4
0
1
2
3
4
5
6
7
8
Vgs=10V
Vgs=20V
@Note: Tj=25!
Fig3. On-Resistance vs. Drain Current
R
D
S
(
o
n
)

,

[
"
]
D
r
a
i
n
-
S
o
u
r
c
e

O
n
-
R
e
s
i
s
t
a
n
c
e
I
D
,Drain Current
Figure 1. Output Characteristics Figure 2. Thansfer Characteristics
Figure 3. On-Resistance vs. Drain Current Figure 4. Source-Drain Diode Forward Voltage
Figure 5. Capacitance vs. Drain-Source Voltage Figure 6. Gate Charge vs. Gate-Source Voltage
KA5X03XX-SERIES
10
Typical Performance Characteristics (Continued)
(KA5H0380R, KA5M0380R, KA5L0380R)

10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
single pulse
0.2
0.1
0.01
0.02
0.05
D=0.5
@ Notes :
1. Z
JC
(t)=1.25
o
C/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
-T
C
=P
DM
*Z
JC
(t)
Z

J
C
(
t
)

,


T
h
e
r
m
a
l

R
e
s
p
o
n
s
e
t
1
, Square Wave Pulse Duration [sec]
-50 0 50 100 150
0.8
0.9
1.0
1.1
1.2
@Notes:
1. V
GS
= 0V
2. I
D
= 250A
T
J
, Junction Temperature [
o
C]
B
V
D
S
S
,

(
N
o
r
m
a
l
i
z
e
d
)
D
r
a
i
n
-
S
o
u
r
c
e

B
r
e
a
k
d
o
w
n

V
o
l
t
a
g
e
-50 0 50 100 150
0.0
0.5
1.0
1.5
2.0
2.5
R
D
S
(o
n
) ,

(
N
o
r
m
a
l
i
z
e
d
)
D
r
a
i
n
-
S
o
u
r
c
e

O
n
-
R
e
s
i
s
t
a
n
c
e
T
J
, Junction Temperature [
o
C]
@Notes:
1. V
GS
= 10V
2. I
D
= 1.5 A
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
10
2
100 s
DC
10 s
1 ms
10 ms
@ Notes :
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
Operation in This Area
is Limited by R
DS(on)
I
D

,

D
r
a
i
n

C
u
r
r
e
n
t


[
A
]
V
DS
, Drain-Source Voltage [V]
40 60 80 100 120 140
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
I
D
,

D
r
a
i
n

C
u
r
r
e
n
t

[
A
]
T
C
, Case Temperature [
o
C]
Figure 7. Breakdown Voltage vs. Temperature Figure 8. On-Resistance vs. Temperature
Figure 9. Max. Safe Operating Area Figure 10. Max. Drain Current vs. Case Temperature
Figure 11. Thermal Response
KA5X03XX-SERIES
11
Typical Performance Characteristics(SenseFET part) (Continued)
(KA5M0365RN, KA5L0365RN)
10
0
10
1
10
-1
10
0
10
1
V
GS
Top: 15.0V
10.0V
8.0V
7.0V
6.5V
6.0V
Bottom: 5.5V
# Note:
1. 250$ s Pulse Test
2. T
C
=25!


I
D
,

D
r
a
i
n

C
u
r
r
e
n
t

[
A
]
V
DS
, Drain-Source Voltage [V]
2 4 6 8 10
10
-1
10
0
10
1


# Note
1. V
DS
= 50V
2. 250$ s Pulse Test
-55!
150!
25!
I
D

,

D
r
a
i
n

C
u
r
r
e
n
t


[
A
]
V
GS
, Gate-Source Voltage [V]
0 1 2 3 4 5 6 7
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
V
GS
= 20V
V
GS
= 10V
#Note: T
J
=25!


R
D
S
(
O
N
)

[
%
]
,
D
r
a
i
n
-
S
o
u
r
c
e

O
n
-
R
e
s
i
s
t
a
n
c
e
I
D
, Drain Current [A]
0.2 0.4 0.6 0.8 1.0 1.2 1.4
10
-1
10
0
10
1


25!
150!
# Note :
1. V
GS
= 0V
2. 250$ s Pulse Test
I
D
R

,

R
e
v
e
r
s
e

D
r
a
i
n

C
u
r
r
e
n
t


[
A
]
V
SD
, Source-Drain Voltage [V]
10
-1
10
0
10
1
100
200
300
400
500
600
700
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
# Note ;
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss


C
a
p
a
c
i
t
a
n
c
e
s

[
p
F
]
V
DS
, Drain-Source Voltage [V]
0 2 4 6 8 10 12
0
2
4
6
8
10
12
V
DS
= 325V
V
DS
= 130V
V
DS
= 520V
# Note : I
D
= 3.0 A


V
G
S
,

G
a
t
e
-
S
o
u
r
c
e

V
o
l
t
a
g
e

[
V
]
Q
G
, Total Gate Charge [nC]
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
Figure 3. On-Resistance vs. Drain Current Figure 4. Source-Drain Diode Forward Voltage
Figure 5. Capacitance vs. Drain-Source Voltage Figure 6. Gate Charge vs. Gate-Source Voltage
KA5X03XX-SERIES
12
Typical Performance Characteristics (Continued)
( KA5M0365RN, KA5L0365RN)
-50 0 50 100 150
0.90
0.95
1.00
1.05
1.10
1.15
# Note :
1. V
GS
= 0 V
2. I
D
= 250 $ A


B
V
D
S
S
,

(
N
o
r
m
a
l
i
z
e
d
)
D
r
a
i
n
-
S
o
u
r
c
e

B
r
e
a
k
d
o
w
n

V
o
l
t
a
g
e
T
J
, Junction Temperature [
o
C]
-50 0 50 100 150
0.5
1.0
1.5
2.0
2.5
# Note :
1. V
GS
= 10 V
2. I
D
= 1.5 A


R
D
S
(
O
N
)
,

(
N
o
r
m
a
l
i
z
e
d
)
D
r
a
i
n
-
S
o
u
r
c
e

O
n
-
R
e
s
i
s
t
a
n
c
e
T
J
, Junction Temperature [
o
C]
Figure 7. Breakdown Voltage vs. Temperature Figure 8. On-Resistance vs. Temperature
Figure 9. Max. Safe Operating Area Figure 10. Max. Drain Current vs. Case Temperature
Figure 11. Thermal Response
10
0
10
1
10
2
10
-3
10
-2
10
-1
10
0
10
1
DC
10 s
1 s
100 ms
10 ms
1 ms
100 s
10 s
Operation in This Area
is Limited by R
DS(on)


I
D
,

D
r
a
i
n

C
u
r
r
e
n
t

[
A
]
V
DS
, Drain-Source Voltage [V]
25 50 75 100 125 150
0.0
0.1
0.2
0.3
0.4
0.5


I
D
,

D
r
a
i
n

C
u
r
r
e
n
t

[
A
]
T
C
, Case Temperature [? ]
1E-5 1E-4 1E-3 0.01 0.1 1 10 100 1000
0.1
1
10
0.05
0.02
0.01
single pulse
0.2
0.1
D=0.5
? Notes :
1. Z
? JC
(t) = 80 ? /W Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
? JC
(t)


Z
?
J
C (
t
)
,

T
h
e
r
m
a
l

R
e
s
p
o
n
s
e
t
1
, Square Wave Pulse Duration [sec]
KA5X03XX-SERIES
13
Typical Performance Characteristics (Control Part) (Continued)
(These characteristic graphs are normalized at Ta = 25C)
Fig.1 Operating Frequency
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
-25 0 25 50 75 &00 &25 &50
Fosc
Fig.2 Feedback Source Current
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
-25 0 25 50 75 100 125 150
Ifb
Fig.3 Operating Current
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
-25 0 25 50 75 100 125 150
Iop
Fig.4 Max Inductor Current
0.8
0.85
0.9
0.95
1
1.05
1.1
-25 0 25 50 75 100 125 150
Ipeak
Fig.5 Start up Current
0.5
0.7
0.9
1.1
1.3
1.5
-25 0 25 50 75 100 125 150
Istart
Fig.6 Start Threshold Voltage
0.85
0.9
0.95
1
1.05
1.1
1.15
-25 0 25 50 75 100 125 150
Vstart

Figure 1. Operating Frequency Figure 2. Feedback Source Current
Figure 3. Operating Supply Current Figure 4. Peak Current Limit
Figure 5. Start up Current Figure 6. Start Threshold Voltage
Iover
KA5X03XX-SERIES
14
Typical Performance Characteristics (Continued)
(These characteristic graphs are normalized at Ta = 25C)
Fig.7 Stop Threshold Voltage
0.85
0.9
0.95
1
1.05
1.1
1.15
-25 0 25 50 75 100 125 150
Vstop
Fig.8 Maximum Duty Cycle
0.85
0.9
0.95
1
1.05
1.1
1.15
-25 0 25 50 75 100 125 150
Dmax
Fig.9 Vcc Zener Voltage
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
-25 0 25 50 75 100 125 150
Vz
Fig.10 Shutdown Feedback Voltage
0.85
0.9
0.95
1
1.05
1.1
1.15
-25 0 25 50 75 100 125 150
Vsd
Fig.11 Shutdown Delay Current
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
-25 0 25 50 75 100 125 150
Idelay
Fig.12 Over Voltage Protection
0.85
0.9
0.95
1
1.05
1.1
1.15
-25 0 25 50 75 100 125 150
Vovp

Figure 7. Stop Threshold Voltage Figure 8. Maximum Duty Cycle
Figure 9. VCC Zener Voltage Figure 10. Shutdown Feedback Voltage
Figure 11. Shutdown Delay Current Figure 12. Over Voltage Protection
KA5X03XX-SERIES
15
Typical Performance Characteristics (Continued)
(These characteristic graphs are normalized at Ta = 25C)
Figure13. Soft Start Voltage Figure 14. Static Drain-Source on Resistance
Fig.13 Soft Start Voltage
0.85
0.9
0.95
1
1.05
1.1
1.15
-25 0 25 50 75 100 125 150
Vss
Fig.14 Drain Source Turn-on
Resistance
0
0.5
1
1.5
2
2.5
-25 0 25 50 75 100 125 150
Rdson

( )
KA5X03XX-SERIES
16
Package Dimensions
TO-220F-4L
KA5X03XX-SERIES
17
Package Dimensions (Continued)
TO-220F-4L(Forming)
KA5X03XX-SERIES
18
Package Dimensions (Continued)
8-DIP
KA5X03XX-SERIES
19
Ordering Information
TU :Non Forming Type
YDTU : Forming type
Product Number Package Marking Code BVDSS FOSC RDS(on)
KA5H0365RTU TO-220F-4L
5H0365R 650V 100kHz 3.6
KA5H0365RYDTU TO-220F-4L(Forming)
KA5M0365RTU TO-220F-4L
5M0365R 650V 67kHz 3.6
KA5M0365RYDTU TO-220F-4L(Forming)
KA5L0365RTU TO-220F-4L
5L0365R 650V 50kHz 3.6
KA5L0365RYDTU TO-220F-4L(Forming)
KA5M0365RN 8-DIP 5M0365R 650V 67kHz 3.6
KA5L0365RN 8-DIP 5L0365R 650V 50kHz 3.6
Product Number Package Marking Code BVDSS FOSC RDS(on)
KA5H0380RTU TO-220F-4L
5H0380R 800V 100kHz 4.6
KA5H0380RYDTU TO-220F-4L(Forming)
KA5M0380RTU TO-220F-4L
5M0380R 800V 67kHz 4.6
KA5M0380RYDTU TO-220F-4L(Forming)
KA5L0380RTU TO-220F-4L
5L0380R 800V 50kHz 4.6
KA5L0380RYDTU TO-220F-4L(Forming)
KA5X03XX-SERIES
12/12/02 0.0m 001
Stock#DSxxxxxxxx
2002 Fairchild Semiconductor Corporation
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, and (c) whose failure to
perform when properly used in accordance with
instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the
user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
www.fairchildsemi.com
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER
DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

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