Special Applications Diodes

Varactor Diodes
 Varactor diodes have relatively high junction
capacitance when reverse biased.
 Varactor Junction
Capacitance
The width of the varactor
A


depletion layer (Wd ) is Ct = ε

controlled by the junction Wd
reverse bias.
 Varactor Bias vs.
Capacitance

Capacitance
decreases as the
magnitude of
reverse bias
increases.
 Varactor Specifications
 Diode capacitance temperature coefficient (TCC ) – The
amount by which varactor capacitance changes with
changes in temperature.
 Temperature has little effect on the capacitance rating of
most varactors.
 Diode capacitance (Ct ) – The rated value (or range) of
C for a varactor at a specific value of VR.
 Capacitance ratio (CR ) – The factor by which C
changes from one specified value of VR to another.
 Varactor-Tuned LC Circuit
 The varactor acts as a
voltage-controlled
capacitance.
 The R2 setting is
varied to adjust
varactor capacitance.
 The varactor
capacitance
determines (in part)
the resonant frequency
of the LC circuit.
1
fr =
2π LC
 Transient Suppressors
 Transient
suppressors are
zener diodes with
extremely high
surge-handling
capabilities.
 Normally used to
protect circuits from
power line surges.
 Transient Suppressor
Specifications
 Peak power dissipation (PPK ) – The amount of surge
power that the suppressor can dissipate.
 Working peak reverse voltage (VRWM ) – The maximum
reverse voltage that will not drive a transient
suppressor into its reverse breakdown (zener) region
of operation.
 Breakdown voltage (VBR ) – The reverse voltage that
will drive a transient suppressor into its reverse
breakdown (zener) region of operation.
 Clamping voltage (VC ) – The rated reverse voltage
across a conducting transient suppressor.
Surge Protection Circuits
 Constant-Current Diodes
 A constant-current diode maintains a relatively
constant device current over a wide range of
forward operating voltages.
 Also referred to as a current regulator diode.
 The current regulator diode has its own schematic
symbol.
Constant-Current Diode
Forward Operation Curves
 Constant-Current Diode
Specifications
 Peak operating voltage (POV) – The maximum
allowable value of VF.
 Maximum limiting voltage (VL ) – The voltage at
which the diode begins to limit current.
 Regulator current (IP ) – The rated forward current at
component voltages between VL and POV.
 Tunnel Diodes
 Tunnel diodes are heavily-doped, making them
suitable for use in high-frequency
communications circuits.
 They are commonly used in ultra-high frequency
(UHF) circuits. UHF circuits operate in the range of
100 MHz to 3 GHz.
 Tunnel diodes exhibit a property referred to as
negative resistance.
 Negative Resistance
 Negative resistance – A term used to describe any
device with current and voltage values that are
inversely related.
 The negative resistance portion of the tunnel diode curve falls
between its peak and valley voltage and current values.
 Tunnel Diode Oscillator
 Oscillator – A circuit that converts dc to ac. An
ac signal generator.
 The tunnel diode oscillator is also referred to as a
negative resistance oscillator.
 Schottky Diodes
 Schottky diode – A high-speed diode
with very little junction capacitance.
 Also known as Schottky-barrier, hot-
carrier, or surface-barrier diodes.
 High frequency characteristics make these
diodes well suited for high-speed switching
applications.
 The metal-semiconductor junction provides
little capacitance, allowing higher
frequency operation of the component.
Schottky Diode Symbol &
Curve
PIN Diodes
 The PIN diode has three semiconductor
materials.
 A p-type anode
 An n-type cathode
 An intrinsic (pure) semiconductor layer.
Pin Diode Capacitance
 PIN Diode Forward
Characteristics
 The forward operating curve shows that:
 Conduction begins at a value of VF > 0 V.
 The PIN diode has no specific knee voltage (voltage
at which the device increases abruptly).
 Step-Recovery Diodes
 Step-recovery diode – A heavily doped diode that
has an ultrafast switching time.
 The ends of the component are doped more heavily
than the area near the junction. This reduces the time
required for the device to switch from off to on, and vice
versa.