Simulating EMCEMI Effects For High-Power Inverter Systems

2008 Ansoft, LLC All rights reserved.
Ansoft, LLC Proprietary

Si mul at i ng EMC/EMI Ef f ec t s f or
Hi gh Pow er I nver t er Syst ems
Emmanuel Batista Alstom

Pearl
Vincent Delafosse,
Ryan Magargle Ansoft Corporation
emmanuel.batista@transport.alstom.com
vdelafosse@ansoft.com
rmagargle@ansoft.com
2008 Ansoft, LLC All rights reserved. Ansoft, LLC Proprietary
Ac k now l edgment s
This work has been based on the work of
Emmanuel Batista, J.M. Dienot, M. Mermet-Guyennet
Special Thanks:

P. Solomalala (Pearl/Alstom)

O.Roll, X. Legoar, D. Prestaux,

X. Wu, M. Rosu, S. Kher (Ansoft)
Pear l : Pow er El ec t r oni c s Assoc i at ed Resear c h Labor at or y
Models-Simulation-Fabrication
EMC
Solve multi-domain/temps/structure
Passive Components
Active Components
Packaging
Research

and Validation of technologies Development

and validation of prototypes
Viability

and maintenance
Design of methods

for conception
Mot i vat i on

High power IGBT based inverter systems have specific EMC/EMI
requirements

The prediction of EMC/EMI fields is very difficult . Physical prototyping
can result in long design cycles

Simulation tools can help with the use of several techniques

The physical quantities in the inverter that need accurate simulation are:

Quantity of current going through the conductors

Frequency dependent parasitics (RLC) between conductors

IGBT characterization curves

Power dissipation

Emitted fields
Over vi ew

Introduction to the power study

Static electromagnetic field study

Parasitics extraction

IGBT characterization

System simulation

Emitted fields
AM
3~
Traction Supply
Pantograph
Traction
Motor
I nt r oduc t i on
Inverter
Inverter Leg
IGBT Module Top Row

These

power converters

are used

in high

speed trains (TGV)
I nt r oduc t i on
6.5kV IGBT Module Characteristics
Baseplate
Collector
Emitter
IGBT
Chips
Diode
Chip
6.5kV 6.5kV- -600A 600A
Module Module
24 IGBT and 24 IGBT and
12 Diode Chips 12 Diode Chips
Dielectric
Gel
Packaging
Ceramic

Substrate
I nt r oduc t i on
6.5kV IGBT Module Analysis

Include package in IGBT
performance

Find DC current distribution

Find switching currents for
power dissipation

Use power dissipation to
determine environmental
electromagnetic fields
Model design developed

at

Alstom/Pearl
IGBT Module
Pack 3D
accurate model
Parameters
Extraction
Electromagnetic
(EM) study
Design and Couplings
Model
IGBT Model

Tridimensional IGBT pack model and EM study
Parasitic model extraction
IGBT circuit model
Far Field Study
Far Field Study for Electric Field EM
I nt r oduc t i on
Different

Modeling

techniques will

be

seen

Tridimensional IGBT pack model and EM study
Parasitic model extraction
IGBT circuit model
Far Field Study for Electric Field EM
Finite Element Method
Finite Element Method
Boundary Element
Method
Boundary Element
Method
Finite Element
Method
Finite Element
Method
System Simulation
System Simulation
I nt r oduc t i on
Over vi ew


Static electromagnetic field study



System simulation

Emitted fields
El ec t r oMagnet i c St udy

Module layout

verification

The module contains

8 IGBTs

in parallel:
does

each

IGBT receive

the same

amount

of
current?

If the current

flows

un-evenly, this

will

cause
mechanical

stress and reliability

issues.

Electromagnetic

simulation is

required. We

use Maxwell3D.

The layout

in imported

from

the CAD tool

The DC solver

is

used

The input current

(600 A) is

defined

The sink

(return current

path) is

defined

Outputs: conduction path

and current

distribution
600 A
Sink
The structure is

meshed

using

automatic

and
adaptive meshing
Current

Distribution
IGBTs

on, Diodes off

The end IGBTs

see

less

current

than

the center ones.

This can

cause reliability

issues
as the center IGBTs

will

be

overloaded

An optimization

of the copper

tracks

can

be

made in order

to
equalize

the currents.
Igbt1a and Igbt4a have the
highest

quantity

of current
Over vi ew


Near field electromagnetic study



System simulation

Emitted fields
Par asi t i c s Ex t r ac t i on

Once the layout

is

optimized, the next

step

is

to extract

the resistance,
inductance and capacitance (RLC) parameters

of the package.

For this

we

use the boundary

element

method

in Q3D

Example

for two

conductors

Frequency Dependent Effects

Integrated power-electronic modules exhibit frequency-dependent
behavior due to eddy current and skin effects.

In these cases, it may not be sufficient to rely on resistance and
inductance extracted at a single operating frequency

For example, coax

conductors:
Low Frequency
High Frequency
Same
geometry
Different
frequency
=
Different Parasitics

Extracting parameters is straightforward as the nets are
automatically assigned.
Gate

net
Emitter

net
Collector

net

How do we set up the frequency sweep?

Through Nyquist

sampling, we know that to capture a
time step of Ts, we need to obtain frequency domain
information up to:

For a time domain waveform with a risetime

of 80 ns, in
order to capture the ringing in the time domain, we would
want to capture at least 4 samples during this risetime.
This implies a sampling time of 20 ns

We

need

to solve

up to 50 MHz (= 1/20ns)
s
t
F
=
2
1
max

The simulation outputs consist of the RLC matrices for different

frequencies

How do we

use the parasitics in the circuit simulator?

Basic methodology:

Compute N-port S parameters (frequency sweep)

Convert this into information that circuit simulator understands

Circuit simulator performs inverse FFT to find impulse response

Convolution is used to produce time-domain results

= = =
t
d x t s t x t s t y j X j S j Y ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) (
) ( ) ) (( ) (
) 1 (
t k x t k n s t n y
n
N n k

=
V
o
lt
a
g
e
876.5m
1.1
900.0m
950.0m
1.0
1.1
1.1
17.55u 20.00u 18.00u 18.50u 19.00u 19.50u
Time (Seconds)
Voltage versus Time Using Different 2D Extractor Mode
VM11.V [V]
VM_Linear_1Hz_Model.V [V]
VM_Linear_1MHz_Model.V [V]
VM_Frequency_Model.V [V]
Damping
Phase
Copper shield
Silicon
Polyethylene
Silicon
Copper
Copper shield
Silicon
Polyethylene
Silicon
Copper
Over vi ew


Near field electromagnetic study



System simulation

Emitted fields
SI MPLORER 8

Simplorer 8 is

a circuit simulation
tool

for solving

multi-domain

lumped

circuit problems.

Link projects

together

to achieve

dynamic

linking

of multiple
simulations on a single sheet.
SI MPLORER 8

Modeling

New Parametrization

tool for IGBT

Enhanced SMPS Library -

Over
450 New VHDL-AMS DC/DC
Converter Models in SMPS

Digital
Co-simulation

Spice Pspice integration

Enhancements

to individual

models


Syst em I nt egr at i on

How do we

import the results

from

Q3D?: Q3D dynamic link

2 Types of links: Single Frequency

or
Frequency

dependent

No need

to manually

import output file

Simplorer incorporates

directly

the Q3D
project

If some

results

are not available, Simplorer
dynamically

launches

Q3D

Parameters

and variables can

be

passed

between

S8 and Q3D
Syst em Si mul at i on
IGBT
Wattmeter
Vc
Vg
Power Module from

Q3D
for board

parasitics
I GBT Char ac t er i zat i on

Accurate

models

of the semiconductors

are needed

to achieve

a good circuit
simulation

Simplorer 8 offers

a parameterization

tool

for IGBTs

The user needs

to import the data from

the datasheet
2 types of models

are available

in Simplorer 8:
Basic Dynamic

and Average

Dynamic
Objective Average Basic
Dynamic
Advanced Dynamic
DC
characteristics
-

Transfer characteristic

Ic(Vge) accurate
-

Output characteristic

Ic(Vce) accurate in
the regions of voltage and current saturation
-

Intrinsic temperature dependency
Electrical
Dynamics
-
Considered
Thermal
Dynamics
Partial Fractional or
Continued Fractional
Capacitance
Models
- Default
C(V)
Full access to the
C(V) characteristics
Sub circuit of the basic dynamic IGBT model
SheetScan

Once all the curves

and data are entered, start

extraction

The tool

fits

the data to the internal

Simplorer model using

Genetic

Algorithm
Characterization tool
Component dialog
Test Circuit
499.90 499.95 500.00 500.05 500.10 500.15 500.20 500.25 500.30
Time [us]
0.00
500.00
1000.00
1500.00
2000.00
2500.00
3000.00
U
1
.
V
C
E
-15.00
-10.00
-5.00
0.00
5.00
10.00
15.00
V
M
2
.
V

[
V
]
-10.00
0.00
10.00
20.00
30.00
40.00
50.00
R
2
.
I

[
A
]
Ansoft Corporation Simplorer1
switch_on
Curve Info
U1.VCE
TR
VM2.V
TR
R2.I
TR
999.00 999.50 1000.00 1000.50 1001.00 1001.50 1002.00 1002.50 1003.00
Time [us]
0.00
500.00
1000.00
1500.00
2000.00
2500.00
U
1
.
V
C
E
-15.00
-10.00
-5.00
0.00
5.00
10.00
15.00
V
M
2
.
V

[
V
]
-10.00
0.00
10.00
20.00
30.00
40.00
50.00
R
2
.
I

[
A
]
Ansoft Corporation Simplorer1
switch_off
Curve Inf o
U1.VCE
TR
VM2.V
TR
R2.I
TR
Switch on
Switch off
Vce
Vce
Ic
Ic
rise time= 40 s
fall

time = 50

s
2500 Voltage
Source
Line Resistance
and Line Inductance
Vg: Gate

Voltage
(+/-15V)

Issue:

Accurate

simulation of the switching

of the IGBTS requires

very

small

time steps

(hmin

= 10ps)

System simulation requires

long time step

(t = 5ms)

Simplorer allows

the user to dynamically

change hmin

and hmax

using

State Graphs.

When

the switching

has occured, the time step

can

be

increased.
Switching Steady state Switching
Vce, Vge, Ic

over time (Igbt3b)
Reduce Time Step HMin
I
c
V
c
e
-
V
g
e
Vge
Vce
Ic
Ic
Vge
Vce
Ic
Vge
Vce
Vge
Vce
Ic
g
c
e
Vce
Vg
Vge
Ic
Power
The power pulse duration is much smaller than the rise/fall time

of Ic

and Vce
Instantaneous power level through Igbt3a
Power levels of the full set of IGBTs

on switch on

Igbt1a and Igbt4a receive the highest
power levels.

This is consistent with the DC
Conduction Maxwell3D solution
Igbt1a
Igbt4a
The fundamental frequencies of the power range
between 16 and 54 MHz
t @
Pmax
(s)
t @ P
<300W
(s)
Freq
(MHz)
Igbt1a 500.2262 500.2867 16.5
Igbt1b 500.2193 500.2429 23.8
Igbt2a 500.2241 500.2743 49.5
Igbt2b 500.2182 500.2369 53.5
Igbt3a 500.2294 500.2675 21
Igbt3b 500.2178 500.2363 54
Igbt4a 500.2256 500.2869 16.5
Igbt4b 500.2191 500.2402 47.5
FTT of the power through Igbt1a
Most of the power level is below 110 MHz
Emi t t ed Fi el ds

There is

very

high

power going

through

the IGBTs

(almost

60 000 W in this

study) during

a very

short period

of time (60 ns). This switching

can

cause
EMI issues in the inverter, but also

in the surrounding

equipment

To be

answered

using

the finite

element

method

in HFSS:

Will the module radiate?

Are the field

levels

surrounding

the module within

mandated

levels?
Emi t t ed Fi el ds

The power pulse in the IGBTs

have most

of the
energy

in the 16-

110 MHz range.

The largest

metallic

piece

is

150 mm in the module

There is

a chance of having

radiation if

< 4 * L = 600 mm.
This is

for a frequency

of 500 MHz.

By itself, the module will

not radiate.

However, the power module in the train is

surrounded

by other

metallic

objects

than

can

be

fairly

large. These

objects

can

cause the radiation
of electric

fields

during

switching.
Maxwells Equations
div D =
curl E = -B/t
div B = 0
curl H = J + D/t
Emi t t ed Fi el ds

Regulators

impose
maximum levels

of
electric

fields

close to
electric

equipment.

In the 10-110 MHz
range:
Emax=61V/m
Exposure

limits

defined

by European

Community
Emi t t ed Fi el ds

Each

IGBT pad is

excited

using

lumped

ports

The port lies between

the collector

and emitter

pads
Emi t t ed Fi el ds

The structure is

discretized

with

adaptive meshing. The meshing

frequency

is

100 MHz

The frequency

sweep

ranges from

15MHz to 120 MHz
Emi t t ed Fi el ds
For each

frequency, the power amplitude is

entered
Spectrum
(MHz)
Power
(W)
E field at 1m for 1000w
(V/m)
E field at 1m
(V/m)
16.52892562 21439.97604 2.6312 56.41286497
33.05785124 8635.09049 2.7994 24.17307232
49.58677686 5579.619715 2.8731 16.0308054
66.11570248 4131.16773 3.063 12.65376676
82.6446281 3276.823585 3.4045 11.15594589
99.17355372 2712.888158 3.8924 10.55964586
115.7024793 2308.359536 4.4861 10.35553171
132.231405 2022.75744 4.905 9.921625241
Spectrum from

Simplorer
Outputs from

Simplorer
Inputs for HFSS
Outputs From

HFSS
(normalized

results)
Fields Levels
Emi t t ed Fi el ds

The E field

is

very

localized

close to the module even

at

100 MHz

However, the very

high

power can

lead

to large
values of E field

even

far
from

the module

This design is

fine at

110MHz.
mag

E @ 100 MHz, Power = 10 000W
Spectrum (MHz)
Power
(W) Spectrum (MHz)
Power
(W)
E field at 1m
(V/ m)
E field at 1m
(V/ m)
115.7024793 2308.359536 115.7024793 2308.359536 10.35553171 10.35553171
Conc l usi on

We have seen that the combination of several simulation techniques can
give a good approach to EMC/EMI issues, both in conduction and emission
modes

Accurate prediction requires the use of Finite Element Methods, Boundary
Element Methods, System Simulation along with Accurate Component

Characteristics

Package traces need optimization to balance current distribution

The simulated module does not radiate for the given harmonics, and is
within regulated near field field limits.

Simulating EMCEMI Effects For High-Power Inverter Systems

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Simulating EMCEMI Effects For High-Power Inverter Systems

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2008 Ansoft, LLC All rights reserved.

Ansoft, LLC Proprietary

2008 Ansoft, LLC All rights reserved. Ansoft, LLC Proprietary

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