Digital Integrated Circuits

2nd
Devices
Digital Integrated
Circuits
A Design Perspective
The Devices
Jan M. Rabaey
Anantha Chandrakasan
Borivoje Nikolic
July 30, 2002
Digital Integrated Circuits
2nd
Devices
What is a Transistor?
V
GS
V
T
R
on
S
D
A Switch!
|V
GS
|
An MOS Transistor
Digital Integrated Circuits
2nd
Devices
MOS Transistors -
Types and Symbols
D
S
G
D
S
G
G
S
D D
S
G
NMOS
Enhancement NMOS
PMOS
Depletion
Enhancement
B
NMOS with
Bulk Contact
Digital Integrated Circuits
2nd
Devices
The Body Effect
-2.5 -2 -1.5 -1 -0.5 0
0.4
0.45
0.5
0.55
0.6
0.65
0.7
0.75
0.8
0.85
0.9
V
BS
(V)
V
T

(
V
)
Digital Integrated Circuits
2nd
Devices
Velocity Saturation
x (V/m)
x
c
= 1.5
u

n



(

m

/
s
)

u
sat
= 10
5
Constant mobility (slope = )
Constant velocity
Digital Integrated Circuits
2nd
Devices
Perspective
I
D
Long-channel device
Short-channel device
V
DS
V
DSAT
V
GS
- V
T
V
GS
= V
DD
Digital Integrated Circuits
2nd
Devices
A PMOS Transistor
-2.5 -2 -1.5 -1 -0.5 0
-1
-0.8
-0.6
-0.4
-0.2
0
x 10
-4
V
DS
(V)
I
D

(
A
)

Assume all variables
negative!
VGS = -1.0V
VGS = -1.5V
VGS = -2.0V
VGS = -2.5V
Digital Integrated Circuits
2nd
Devices
Transistor Model
for Manual Analysis
Digital Integrated Circuits
2nd
Devices
The Transistor as a Switch
Digital Integrated Circuits
2nd
Devices
MOS Capacitances
Dynamic Behavior
Digital Integrated Circuits
2nd
Devices
Dynamic Behavior of MOS Transistor
D
S
G
B
C
GD
C
GS
C
SB
C
DB
C
GB
Digital Integrated Circuits
2nd
Devices
The Gate Capacitance
t
ox
n
+
n
+
Cross section
L
Gate oxide
x
d
x
d
L
d
Polysilicon gate
Top view
Gate-bulk
overlap
Source
n
+
Drain
n
+
W
Digital Integrated Circuits
2nd
Devices
Gate Capacitance
S
D
G
C
GC
S
D
G
C
GC
S
D
G
C
GC
Cut-off
Resistive Saturation
Most important regions in digital design: saturation and cut-off
Digital Integrated Circuits
2nd
Devices
Gate Capacitance
WLC
ox
WLC
ox
2
2WLC
o
x
3
C
GC
C
GCS
V
DS
/(V
GS
-V
T
)
C
GCD
0 1
C
GC
C
GCS
= C
GCD
C
GCB
WLC
ox
WLC
ox
2
V
GS
Capacitance as a function of VGS
(with VDS = 0)
Capacitance as a function of the
degree of saturation
Digital Integrated Circuits
2nd
Devices
Measuring the Gate Cap
2 1.52 1 2 0.5 0
3
4
5
6
7
8
9
10
3 10
2 16
2
V
GS
(V)
V
GS
G
a
t
e

C
a
p
a
c
i
t
a
n
c
e

(
F
)
0.5 1 1.5 2 2 2
I
Digital Integrated Circuits
2nd
Devices
Diffusion Capacitance
Bottom
Side wall
Side wall
Channel
Source
N
D
Channel-stop implant
N
A
1
Substrate N
A
W
x
j
L
S
Digital Integrated Circuits
2nd
Devices
Junction Capacitance
Digital Integrated Circuits
2nd
Devices
Capacitances in 0.25 m CMOS
process
Digital Integrated Circuits
2nd
Devices
Future Perspectives
25 nm FINFET MOS transistor