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Semiconductor Application Note: For More Information On This Product
Semiconductor Application Note: For More Information On This Product
INTRODUCTION
There are two types of field-effect transistors, the Junction
Field-Effect Transistor (JFET) and the Metal-Oxide
Semiconductor Field-Effect Transistor (MOSFET), or
Insulated-Gate Field-Effect Transistor (IGFET). The
principles on which these devices operate (current controlled
by an electric field) are very similar the primary difference
being in the methods by which the control element is made.
This difference, however, results in a considerable difference
in device characteristics and necessitates variances in circuit
design, which are discussed in this note.
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MODES OF OPERATION
There are two basic modes of operation of FETs
depletion and enhancement. Depletion mode, as previously
mentioned, refers to the decrease of carriers in the channel
due to variation in gate voltage. Enhancement mode refers
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Static Characteristics
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ELECTRICAL CHARACTERISTICS
Because the basic mode of operation for field-effect
devices differs greatly from that of conventional junction
transistors, the terminology and specifications are
necessarily different. An understanding of FET terminology
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Figure 9. Transfer Characteristics and Associated Scope Traces for the Three FET Types
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Figure 10. Static Characteristics for the Three FET Types Are Defined by the Above Curves, Tables, and Test Circuits
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Circuits
The types of circuits that can utilize FETs are practically
unlimited. In fact, many circuits designed to utilize
smallsignal pentode tubes can utilize FETs with only minor
modifications. For example, the circuit in Figure 21 shows
a typical rf stage for a broadcast-band auto radio. In this
circuit, a MPF102 n-channel JFET has replaced the 12BL6
pentode normally employed. The specifications for the two
devices, including the AGC characteristics, are similar
enough to perform adequately in the circuit of Figure 21.
In an audio application, a field-effect transistor such as
the 2N5460 can be combined with a high voltage bipolar
transistor to make a simple line-operated phonograph
amplifier such as that shown in Figure 22. The ceramic
pickup is connected through a potentiometer volume control
to the field-effect transistor. Collector current of the transistor,
in turn, is set by the potentiometer in the source of the FET.
With the proper bipolar output transistor, the circuit can be
driven directly from the rectified line voltage, while the low
voltage for the FET can be derived from a voltage divider
in the power supply line.
Figure 23 shows three basic chopper circuits. The
advantage of the more complex series-shunt circuit (24c) is
that it balances out the leakage currents of the FETs in order
to reduce voltage error and is used to attain high chopping
frequencies. From an applications standpoint, the FET circuit
is superior to a junction transistor circuit in that there is no
offset voltage with the FET turned on. On the minus side,
however, the field-effect-transistor chopper generally has a
higher series resistance (rds(on)) than the junction transistor.
As newer and better FETs are introduced and as a larger
number of designers learn to use them, the range of
applications of FETs should broaden considerably.
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