, Lf na.

20 STERN AVE. TELEPHONE: (973) 376-2922

SPRINGFIELD, NEW JERSEY 07081 (212)227-6005
U.S.A. FAX: (973) 376-8960

N-Channel Mosfet Transistor IRF840

0(2)
FEATURES
Drain Current -ID=8.0A@ TC=25°C
Drain Source Voltage-
: VDSs= 500V(Min)
Static Drain-Source On-Resistance
) = 0.85fi(Max) i 1 '. S(3)
LGate
1. i 1. PIN 2. Drain
DESCRITION
1 2: 3. Source
Designed for high voltage, high speed switching power applic- TO-220C package
ations such as switching regulators, converters, solenoid and
relay drivers.
1
-

j-ert
B M
-» V -*| |x~
r
ABSOLUTE MAXIMUM RATINGS(Ta=25°C) A —«<x>-

SYMBOL PARAMETER VALUE UNIT

i M*

r
MLPCS soi-.
* ' t !
VDSS Drain-Source Voltage 500 V
K
Gate-Source Voltage-Continuous + 20 V •*!*• Q
VGS
rr »!•*• j
ID Drain Current-Continuous 8 A ' :"-H G •« R(-*-
l
c
I DM Drain Current-Single Plused 32 A ! 1
4

PD Total Dissipation @Tc=25°C 125 W

mm
DIN MtN MAX
A 15.70 15.90
Tj Max. Operating Junction Temperature 150 r B 9.90 10.10
C 4.20 4.40
Storage Temperature -55-150 r D 0.70 0.90
Tstg
F 3.40 3.60
G 4.98 5.18
H 2.70 2.90
THERMAL CHARACTERISTICS J 0.44 0.46
K 13.20 13.40
SYMBOL PARAMETER MAX UNIT L 1.10 1.30
Q 2.70 2.90
R 2.50 2.70
Rfh j-c Thermal Resistance.Junction to Case 1.0 'CM/
S 1.29 1.31
U 6.45 6.65
Rth j-a Thermal Resistance.Junction to Ambient 62.5 "C/W V 8.66 8.86

NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

Quality Semi-Conductors
 N-Channel Mosfet Transistor IRF840

ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN MAX UNIT

V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 500 V

VGS(IW Gate Threshold Voltage VDS= VGS; b= 0.25mA 2 4 V

RDS(OH) Drain-Source On-Resistance VGS=10V; ID=4A 0.85 D

IGSS Gate-Body Leakage Current VGS= ±20V;VDS=0 ±500 nA

loss Zero Gate Voltage Drain Current VDS= 500V; VGS=0 250 nA

VSD Forward On-Voltage ls= 8A; VGS=0 2.0 V