ls.ii.Eii , Una.

20 STERN AVE. TELEPHONE: (973) 376-2922

SPRINGFIELD, NEW JERSEY 07081 (212)227-6005
U.S.A. FAX: (973) 376-8960

Silicon PNP Power Transistor 2SB1009

DESCRIPTION
• High Collector Current -lc= -2A
• Collector-Emitter Breakdown Voltage-

•^
: V(BR)CEo= -32V(Min)
• Good Linearity of hFE
• Low Saturation Voltage PUT:! Emitter
• Complement to Type 2SD1380 2 Collector
: 3 Base
1 j 3 TO-1ZB package

APPLICATIONS
• Designed for low frequency power amplifier applications.
r-^F T
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
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SYMBOL PARAMETER VALUE UNIT H - -v t

r
f1 K ~*
r*-J
VCBO Collector-Base Voltage -40 V
D-» «
*-R

VCEO Collector-Emitter Voltage -32 V

G f«—

VEBO Emitter-Base Voltage -5 V

n •BD
1 ? 3
Ic Collector Current-Continuous -2 A
mm
DIM WIN MAX
ICP Collector Current-Pulse -3 A A 10.70 10.95
B 7.70 7.90
C 2.60 2.80
Collector Power Dissipation
10 D 0.66 0.86
@ TC=25'C
W F 3.10 3.30
PC
Collector Power Dissipation G 4.48 4.68
1.2 H 2.00 2.20
@ Ta=25'C
J 1,35 1.55
K 15.30 16.30
Tj Junction Temperature 150 "C
0 3.70 3.90
R 0.40 0.60
Tstg Storage Temperature Range -55-150 •c V 1,17 1.37

N.I Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions uithout
notice. Information furnished by N.I Semi-Conductors is believed to he both accurate and reliable at the time ot'L'.oin;.
to press, llouevcr, NJ Semi-Condiictors assumes no responsibiliu I'or an> errors or omissions discovered in its use.
N.I Semi-Conductors encoura»es customers to \ e r i l v that diilasheels are current before placing orders.

Quality Semi-Conductors
 Silicon PNP Power Transistor 2SB1009

ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage lc= -1mA; IB=0 -32 V

V(BR)CBO Collector-Base Breakdown Voltage lc= -50u A; IE= 0 -40 V

V(BR)EBO Emitter-Base Breakdown Voltage IE= -50u A; lc= 0 "0 V

VcE(sat) Collector-Emitter Saturation Voltage lc= -2A; IB= -0.2A -0.8 V

ICBO Collector Cutoff Current VCB= -20V; IE= 0 -1.0 u A

IEBO Emitter Cutoff Current VEB= -4V; lc= 0 -1.0 u A

FIFE DC Current Gain lc= -0.5A; VCE= -5V 82 390

fy Current-Gain— Bandwidth Product lc= -0.5A; VCE= -5V 100 MHz

COB Output Capacitance IE=0;VCB=-10V, f,est=1MHz 50 pF

Classifications

p Q R

82-180 120-270 180-390