JZII.EU <3£,tni-L,onauctori L/^ioaucti, Line.

20 STERN AVE. TELEPHONE: (973) 376-2922

SPRINGFIELD, NEW JERSEY 07081 (212)227-6005
U.S.A. FAX: (973) 376-8960

Silicon NPN Power Transistor KSD5703

DESCRIPTION
• High Breakdown Voltage-
: V CB o=1500V(Min)
• High Switching Speed
• Low Saturation Voltage
• .'
1 j
• '

3
,
PIN 1.BASE
2. COLLECTOR
3 EMITTER
TO-3PO-OIS package

APPLICATIONS
• Designed for color TV horizontal output applications
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ABSOLUTE MAXIMUM RATINGS(Ta=25°C)

SYMBOL PARAMETER VALUE UNIT : „ • ' -*

>
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, z
| L— -*- •»
VCBO Collector-Base Voltage 1500 V G
K
i

t
VCEO Collector-Emitter Voltage 800 V ^ -• J
»-0 «- R -- I*—-*

mm
VEBO Emitter-Base Voltage 6 V
DIM MIN MAX
A 24.30 24.70
B 15.20 15.80
Ic Collector Current- Continuous 10 A C 5,20 5.80
D 0,65 0.85
F 3.30 3,90
Ic Collector Current- Pulse 30 A G 3.90 4,10
K 4.30 4.70
J 0,80 1.00
Collector Power Dissipation K 18,30 18.70
PC 70 W
@ TC=25°C L 1,90 2.10
N 10.70 11.10
Q 4.40 4.60
Tj Junction Temperature 150 °C R 3.30 3.70
S 3.20 3,40
U 9,50 9.70
Storage Temperature Range -55-150 •c Y 1,90 2.10
Tstg
Z 1.40 1.60

NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

Quality Semi-Conductors
 Silicon NPN Power Transistor KSD5703

ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

VcE(sat) Collector-Emitter Saturation Voltage IC=8A;IB=1.6A 5.0 V

VeE(sat) Base-Emitter Saturation Voltage lc=8A; I B =1.6A 1.5 V

ICES Collector Cutoff Current V C E=1400V;V B E=0 1 mA

ICBO Collector Cutoff Current VCB= 800V; IE= 0 10 uA

IOBO Collector Cutoff Current VeB= 4V; lc= 0 1 mA

hpE-1 DC Current Gain lc= 1A; VCE= 5V 15 40

hFE-2 DC Current Gain lc= 8A; VCE= 5V 5.3 7.3

lc=6A, IB1=1.2A; IB2= -2.4A;

tf Fall Time 0.3 us
Vcc= 200V; RL= 33.3 fi