FGH40N60SFD: 600V, 40A Field Stop IGBT

FGH40N60SFD
tm
600V, 40A Field Stop IGBT

Features
General Description
High current capability
Using Novel Field Stop IGBT Technology, Fairchilds new sesries of Field Stop IGBTs offer the optimum performance for
Induction Heating, UPS, SMPS and PFC applications where
low conduction and switching losses are essential.
Low saturation voltage: VCE(sat) =2.3V @ IC = 40A

High input impedance
Fast switching
RoHS compliant
Applications
Induction Heating, UPS, SMPS, PFC
C
G
COLLECTOR
(FLANGE)
Absolute Maximum Ratings

Symbol
Description
VCES
Collector to Emitter Voltage
VGES
Gate to Emitter Voltage
IC
ICM (1)
PD
Collector Current
@ TC = 25oC
Collector Current
@ TC = 100oC
TL
80
A
A
@ TC = 25 C
@ TC = 25oC
290
Maximum Power Dissipation
Maximum Lead Temp. for soldering

Purposes, 1/8 from case for 5 seconds
20
Storage Temperature Range
40
Maximum Power Dissipation
Tstg
Units
600
120
Pulsed Collector Current
@ TC = 100 C
116
Operating Junction Temperature
TJ
Ratings
-55 to +150
-55 to +150
300
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
Units
RJC(IGBT)
Thermal Resistance, Junction to Case
0.43
C/W
RJC(Diode)
Thermal Resistance, Junction to Case
1.45
C/W
RJA
Thermal Resistance, Junction to Ambient
2008 Fairchild Semiconductor Corporation
FGH40N60SFD Rev.C
40
oC/W
www.fairchildsemi.com
FGH40N60SFD 600V, 40A Field Stop IGBT
July 2008
Device Marking
Device
Package
Packaging
Type
FGH40N60SFD
FGH40N60SFDTU
TO-247
Tube
Electrical Characteristics of the IGBT

Symbol
Parameter
Max Qty
Qty per Tube
per Box
30ea
TC = 25C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
600
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250A
BVCES
TJ
Temperature Coefficient of Breakdown

Voltage
VGE = 0V, IC = 250A
0.6
V/oC
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0V
250
IGES
G-E Leakage Current
VGE = VGES, VCE = 0V
400
nA
IC = 250A, VCE = VGE
4.0
5.0
6.5
IC = 40A, VGE = 15V
2.3
2.9
IC = 40A, VGE = 15V,

TC = 125oC
2.5
2110
pF
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat)
Collector to Emitter Saturation Voltage
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,

f = 1MHz
200
pF
60
pF
Switching Characteristics
td(on)
Turn-On Delay Time
25
ns
tr
Rise Time
42
ns
td(off)
Turn-Off Delay Time
tf
Fall Time
Eon
Turn-On Switching Loss
Eoff
Turn-Off Switching Loss
Ets
td(on)
tr
Rise Time
43
ns
td(off)
Turn-Off Delay Time
120
ns
tf
Fall Time
Eon
Turn-On Switching Loss
Eoff
Turn-Off Switching Loss
0.48
mJ
Ets
Total Switching Loss
1.62
mJ
115
ns
27
54
ns
1.13
mJ
0.31
mJ
Total Switching Loss
1.44
mJ
Turn-On Delay Time
24
ns
Qg
Total Gate Charge
Qge
Gate to Emitter Charge
Qgc
Gate to Collector Charge
FGH40N60SFD Rev. C
VCC = 400V, IC = 40A,

RG = 10, VGE = 15V,
Inductive Load, TC = 25oC
VCC = 400V, IC = 40A,

RG = 10, VGE = 15V,
Inductive Load, TC = 125oC
VCE = 400V, IC = 40A,

VGE = 15V
30
ns
1.14
mJ
120
nC
14
nC
58
nC
Package Marking and Ordering Information
Symbol
Parameter
VFM
Diode Forward Voltage
trr
Diode Reverse Recovery Time
TC = 25C unless otherwise noted
Test Conditions
IF = 20A
IES =20A, dIES/dt = 200A/s

Qrr
Diode Reverse Recovery Charge
FGH40N60SFD Rev.C
Min.
Typ.
Max
TC = 25oC
1.95
2.6
TC = 125oC
1.85
TC = 25oC
45
140
TC = 25oC
75
375
TC =
125oC
TC = 125 C
Units
V
ns
nC
Electrical Characteristics of the Diode
Figure 1. Typical Output Characteristics

120
Figure 2. Typical Output Characteristics

120
TC = 25 C
15V
80
20V
15V
100
Collector Current, IC [A]
100
TC = 125 C
20V
12V
60
40
10V
80
60
10V
40
20
20
VGE = 8V
VGE = 8V
0
0.0
1.5
3.0
4.5
Collector-Emitter Voltage, VCE [V]
0
0.0
6.0
Figure 3. Typical Saturation Voltage

Characteristics
6.0
120
Common Emitter
VCE = 20V
Common Emitter
VGE = 15V
1.5
3.0
4.5
Figure 4. Transfer Characteristics
80
TC = 25 C
60
TC = 125 C
40
20
TC = 25 C
o
TC = 125 C
80
40
0
0
1
2
3
Figure 5. Saturation Voltage vs. Case

Temperature at Variant Current Level
20
Common Emitter
VGE = 15V
3.5
80A
3.0
2.5
40A
2.0
IC = 20A
1.5
1.0
25
13
Common Emitter
o
TC = -40 C
16
12
40A
80A
IC = 20A
50
75
100
125
o
Collector-EmitterCase Temperature, TC [ C]
FGH40N60SFD Rev. C
8
10
12
Gate-Emitter Voltage,VGE [V]
Figure 6. Saturation Voltage vs. VGE
4.0
12V
8
12
16
Gate-Emitter Voltage, VGE [V]
20
Typical Performance Characteristics
20
20
Common Emitter
Common Emitter
TC = 25 C
16
12
8
40A
80A
4
IC = 20A
TC = 125 C
16
12
8
40A
IC = 20A
0
4
8
12
16
20
Figure 9. Capacitance Characteristics
20
15
Common Emitter
Common Emitter
VGE = 0V, f = 1MHz
Ciss
4000
Capacitance [pF]
8
12
16
Figure 10. Gate charge Characteristics
5000
TC = 25 C
3000
Coss
2000
1000
Crss
0
0.1
TC = 25 C
12
Vcc = 100V
200V
300V
1
10
30
Figure 11. SOA Characteristics
50
100
Gate Charge, Qg [nC]
150
Figure 12. Turn-on Characteristics vs.

Gate Resistance
400
200
100
10s
100
Switching Time [ns]
Collector Current, Ic [A]
80A
100s
10
1ms
10 ms
DC
Single Nonrepetitive
Pulse TC = 25oC
Curves must be derated
linearly with increase
in temperature
0.1
tr
td(on)
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
o
TC = 25 C
o
TC = 125 C
0.01
10
1
FGH40N60SFD Rev. C
10
100
1000
10
20
30
40
Gate Resistance, RG []
50
Figure 13. Turn-off Characteristics vs.

Gate Resistance
Figure 14. Turn-on Characteristics vs.

Collector Current
500
5500
Common Emitter
VGE = 15V, RG = 10
o
TC = 25 C
1000
TC = 25 C
Switching Time [ns]
Switching Time [ns]
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
o
TC = 125 C
td(off)
100
tf
TC = 125 C
td(on)
10
20
10
0
10
20
30
40
50
40
80
Figure 16. Switching Loss vs. Gate Resistance

10
500
Common Emitter
VGE = 15V, RG = 10
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
TC = 25 C
TC = 125 C
TC = 25 C
Switching Loss [mJ]
Switching Time [ns]
60
Figure 15. Turn-off Characteristics vs.

Collector Current
td(off)
100
tf
TC = 125 C
1
Eoff
40
60
80
Figure 17. Switching Loss vs. Collector Current
10
20
30
40
50
Figure 18. Turn off Switching

SOA Characteristics
30
200
Common Emitter
VGE = 15V, RG = 10
100
TC = 25 C
Eon
TC = 125 C
10
Eon
0.2
0.3
10
20
Switching Loss [mJ]
tr
100
Eoff
10
Safe Operating Area
0.1
VGE = 15V, TC = 125 C
20
30
40
50
60
70
80
FGH40N60SFD Rev. C
10
100
1000
Figure 19. Forward Characteristics
Figure 20. Typical Reverse Current vs.

Reverse Voltage
80
200
100
o
Reverse Current , IR [A]
Forward Current, IF [A]
TJ = 125 C
o
TJ = 125 C
10
TJ = 25 C
o
TJ = 75 C
o
TC = 25 C
10
o
TJ = 75 C
0.1
TJ = 25 C
TC = 75 C
o
TC = 125 C
0.2
0
1
2
3
Forward Voltage, VF [V]
0.01
50
Figure 21. Stored Charge
600
Figure 22. Reverse Recovery Time

60
Reverse Recovery Time, trr [ns]
100
Stored Recovery Charge, Qrr [nC]
200
400
Reverse Voltage, VR [V]
200A/s
80
60
di/dt = 100A/s
40
50
di/dt = 100A/s
200A/s
40
30
20
5
10
20
30
40
10
20
30
40
Figure 23.Transient Thermal Impedance of IGBT
Thermal Response [Zthjc]
0.5
0.1
0.2
0.01
0.05
0.02
0.01
0.1
PDM
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
single pulse
1E-3
1E-5
1E-4
1E-3
0.01
0.1
Rectangular Pulse Duration [sec]
FGH40N60SFD Rev. C
Mechanical Dimensions
TO-247AB (FKS PKG CODE 001)
Dimensions in Millimeters
FGH40N60SFD Rev. C
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not intended to be an exhaustive list of all such trademarks.
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FACT
FAST
FastvCore
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Quiet Series
RapidConfigure
Saving our world, 1mW at a time
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SMART START
SPM
STEALTH
SuperFET
SuperSOT-3
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2.
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Datasheet contains the design specifications for product development. Specifications

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Rev. I35

FGH40N60SFD: 600V, 40A Field Stop IGBT

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FGH40N60SFD: 600V, 40A Field Stop IGBT

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FGH40N60SFD

600V, 40A Field Stop IGBT

High current capability

Low saturation voltage: VCE(sat) =2.3V @ IC = 40A

Absolute Maximum Ratings

Collector to Emitter Voltage

Gate to Emitter Voltage

Maximum Power Dissipation

Maximum Lead Temp. for soldering

Storage Temperature Range

Maximum Power Dissipation

Pulsed Collector Current

Operating Junction Temperature

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

2008 Fairchild Semiconductor Corporation

FGH40N60SFD 600V, 40A Field Stop IGBT

Electrical Characteristics of the IGBT

TC = 25C unless otherwise noted

Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250A

Temperature Coefficient of Breakdown

VGE = 0V, IC = 250A

Collector Cut-Off Current

VCE = VCES, VGE = 0V

G-E Leakage Current

VGE = VGES, VCE = 0V

IC = 250A, VCE = VGE

IC = 40A, VGE = 15V

IC = 40A, VGE = 15V,

G-E Threshold Voltage

Collector to Emitter Saturation Voltage

Reverse Transfer Capacitance

VCE = 30V, VGE = 0V,

Turn-On Delay Time

Turn-Off Delay Time

Turn-On Switching Loss

Turn-Off Switching Loss

Turn-Off Delay Time

Turn-On Switching Loss

Turn-Off Switching Loss

Total Switching Loss

Total Switching Loss

Turn-On Delay Time

Total Gate Charge

Gate to Emitter Charge

Gate to Collector Charge

VCC = 400V, IC = 40A,

VCC = 400V, IC = 40A,

VCE = 400V, IC = 40A,

FGH40N60SFD 600V, 40A Field Stop IGBT

Package Marking and Ordering Information

Diode Forward Voltage

Diode Reverse Recovery Time

TC = 25C unless otherwise noted

IES =20A, dIES/dt = 200A/s

Diode Reverse Recovery Charge

FGH40N60SFD 600V, 40A Field Stop IGBT

Electrical Characteristics of the Diode

Figure 1. Typical Output Characteristics

Figure 2. Typical Output Characteristics

Figure 3. Typical Saturation Voltage

Collector Current, IC [A]