ECE 3040 C Fall 2014 Microelectronic Circuits School of Electrical and Computer Engineering Georgia Institute of Technology 1. Pierret, Problem 6.11 (25 points) 2. PN-Junction: Reverse Bias (25 points) The junction capacitance Cj of a one-sided silicon pn junction (i.e. one side of the junction is highly doped, the other side is much lower doped, e.g. n+p or p+n) at T = 300 K is measured under a reverse bias VA = 50 mV and found to be 1.3 pF. The junction area is 10-5 cm2 and Vbi = 0.95 V. (a) (b)
Find the doping concentration of the low-doped side of the junction.
Find the doping concentration of the higher doped region.