ECE 3040 Fall 2014 Po | WA : vane_~O [04104 Exam #2 1) [4 pts] In a BIT, is the collector, base, or emitter the most doped region? Why? — Emitte- — emnlh- ebbing 2) {4 pts] in a BJT, fundamentally, why does the base region need to be ‘narrow’? Moreover, define what ‘narrow’ means (hint: you may wish to use mathematical expression to explain) oe Mipns2e mronlig Corner Pe Cembortion eo << (BP 3) [4 pts] For a BIT to be in the forward active mode, how should the two junctions be biased (be sure to specify the junction in your answer)? E-8 = fwd B-C = Revest 4) {@ pts] For a MOS-capacitor under inversion, does the surface potential in the channel change quickly, slowly, or remain the same as the gate voltage increases? k — Slowly Caen 5) [4 pts] For a MOSFET, the current flowing in the channel is dominated by diffusion, drift, or anit6) [4 pts] In the Square Law Theory derivation in class, what helped us find an analytical expression for the charge formed in the channel region relative to surface potential? You can explain in short words or write key equations. os We GA Cd5ehey Now Q=CV Lo G be Qn Bw gee WMepe 7) [4 pts] Why is the effective carrier mobility used in MOSFET modeling different from the bulk carrier mobility? — Bie clves not toke me Betoert bagee : Tderpetuns @ be Swbec — Suaiice SO Identify the region of the operation of an NMOS transistor with K,, = 400 44/V2and Vay = 0.7¥ for: a) [4 pts] ) Ves = 3.3V and Vos = 3.3V, Va-Yna Vos SS Sat 3] b) [4 pts] (b} Ves = OV and Vps = 3.3V, \bs< Vin —> off €) [4 pts] (c) Ves = 2V and Vos = 2V, Varvia Vas —® Set 4) [4 pts] Ves = 1.5V and Vos = 0.5V Veg Vm >Vos > hina9) The following figure is a dimensioned energy band diagram for an ideal MOS-C operated at T= 300K with Vg # 0. Note the Ep = B; at the Si-SiO; interface. (a) {5 pts} Calculate bs G 7 [E.G ~6 OO N= On3V (b) [4 pts] Draw the block charge diagram corresponding to the state pictured in the energy band diagram,(c) [5 pts] What is the value of Vg based on the band diagram Ve=y [Albee - g-toms)| = 046 (d) [12 pts] What is x, (oxide thickness) equal to based on the band diagram. Va = Bet ‘se [Fie : oO Ds iid ka % ss y = kt Ni ae z a. (wt) 10 0-3/p.02d BNA ee oA) _ Ip € I oF3 x0 Jon *Asseme yy = Oks 10) [10 pts] Find the Q-point for the two diodes shown in the circuit below: 22KQ Assum Pi o® ot Ba_OM Tr OBKY 06S nak ty) i we G qv 446-0065 $= ape = OaamA sole @ Nace k= 6V— (ask) xaW= -B 44 Gi! (0A, 34V) ever (0-380, Ob §¥\11) (10 pts) Find the Q-point for the circuit shown below. Assume the Bp = 50 and Vag = 0.77 +10V 68 KQ 43 KQ 36KQ. 33KQ Re, = RAMEBEN a = ORSYAR g3k* 36K / ae m Vea = aera) => 6? sia GJlov = 3 Ufav Veg—a eee 3.460 -02% ce =56 = héaah eet (5041) BRL fesi & RD sone Fel Es Sc=pig= S290 B= (Gili )= 8265 aA e ¥ [o~ 43k he BREE ~ 32 79V ce = Gime = (stn 230)12) [10 pts] The ac equivalent circuit for an amplifier is shown below. Assume the capacitors have infinite value, Ry = 10 KM, Ry = 5 MO, Rc = 1.5 MN and Ry = 3.3 MM. Calculate the voltage gain for the amplifier if the BJT Q-pointis (1 j1A, 1.5 V). Assume the iy = 40 and V4 = SOV. pikee “9 dons Voot ee Tian 8, YY 50M fy = a, 4 nage % = jms = Yous Mp 333 KIL wp Ra Rola= 8% = yp = 7 Ine (nifrellRs ) Mn Nbe = - Fer) (Re >) <> Vet = “Sm Vee den = Vin = 7. CB (ult) Vin Ty, (olIhe/I oss = = 44This Page left empty in case you need extra paper