Homework #3

Solution
ECE 3040 C Fall 2014
Microelectronic Circuits
School of Electrical and Computer Engineering
Georgia Institute of Technology
1. Pierret, Problem 6.11 (25 points)

2. PN-Junction: Reverse Bias (25 points)

The junction capacitance Cj of a one-sided silicon pn junction (i.e. one side of the
junction is highly doped, the other side is much lower doped, e.g. n+p or p+n) at T = 300
K is measured under a reverse bias VA = 50 mV and found to be 1.3 pF. The junction
area is 10-5 cm2 and Vbi = 0.95 V.
(a)
(b)

Find the doping concentration of the low-doped side of the junction.

Find the doping concentration of the higher doped region.

3. Pierret, Problem 6.13 (25 points)

4. Pierret, Problem 7.1 (25 points)