UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences EE 105 Spring 2013 Homework Assignment

#2 Due at the beginning of class on Wednesday (2/13/2013) Problem 1 [20 points]: PN Junction Electrostatics Prof. Salahuddin

(a) For the p-n junction shown above, draw the (i) Charge profile in the depletion region (ii) Electric Field (iii) Energy band Profile (b) Derive the expression of depletion region width in terms of doping, built-in-potential and permittivity of the semiconductor being used, starting from known relations of electric field and following the general procedure outlined in Lecture 6, slides 6-8(see the annotated notes). To make the integrations simpler, you can just use the absolute values and ignore the signs.
Prob 2. [20 pts] PN Junctions Consider that a Si sample has been doped as shown below:

(i) Briefly state how depletion region is created at the junction. (ii) Find out the built in potential at T=300K. (iii) If the two sides of the sample is now shorted, do you expect a current to flow due to the built in potential? Justify your answer. (iV) Draw the charge density and electric profile for this junction. (V) Qualitatively explain what happens to charge density and electric field when a reverse bias is applied as opposed to equilibrium condition. Justify your answer.

Problem 3 [20 points]: PN Junction I-V The minority-carrier diffusion lengths (Ln and Lp) are related to the minority-carrier diffusion constants (Dn and Dp, respectively) by the equation , where is the minority-carrier lifetime.

Consider a PN junction of area 100 m2 formed by locally introducing boron into the surface region of a silicon sample that is uniformly doped with phosphorus, as shown to the right. The minority-carrier lifetime for electrons in the P-type region is n = 0.01s, and the minority-carrier lifetime for holes in the N-type region is p = 1s. The diode is maintained at 300K. a) Calculate the diode saturation current, IS. (Use the mobility curves from problem 1 to determine the minority carrier mobilities within the quasi-neutral regions, and then use the Einstein Relation to calculate the minority-carrier diffusion constants.) b) At what applied bias voltage VD does the diode conduct 1mA of current? What percentage of this current is carried by holes across the junction (at x = 0)? c) How would IS change if the doping concentration on the P-type side were to be increased (e.g. to 1019 cm-3)? Provide a qualitative explanation for your answer (without resorting to any equations). d) The PN diode can be used as a very sensitive temperature sensor. Explain qualitatively how the diode current changes with increasing temperature (near room temperature), for a fixed forward bias voltage. You may assume that the minority-carrier mobilities and lifetimes do not change substantially with temperature. Problem 4 [20 points]: PN Junction C-V Assume a Si P-N junction with NA=1017 /cm3 and ND= 1014/ cm3 is in Equilibrium. Find out (i) Maximum Electric Field at the junction (ii) The depletion region width (iii) The capacitance (iV) How would the capacitance change if a doping of ND=1017 /cm3 is added to the n side.