ELECTRONIC MATERIALS AND DEVICES (BECE201L) QUIZ-1

SLOT-Y11+Y12+Y21 DATE:19/03/2023

MARKS:20 WEIGHTAGE: 10 FACULTY: DR. NAUSHAD MANZOOR LASKAR

1. A PN junction has Na = 1019 cm–3 and Nd = 1016 cm–3.With V = 0, what are the minority carrier densities
at the depletion region edges? 2

2. A P+N junction has Na = 1020cm-3 and Nd = 1017cm–3. What is (a) the built-in potential, (b) Wdep, (c) xN,
and (d) xP? 3

3. Consider a silicon pn junction with the doping profile shown in Figure below. T=300 K. (a) Calculate
the applied reverse-biased voltage required so that the space charge region extends entirely through
the p region. (b) Determine the space charge width into the n+ region with the reverse-biased voltage
calculated in part (a). (c) Calculate the peak electric field for this applied voltage. 5

4. Consider an ideal pn junction diode at T= 300 K operating in the forward-bias region. Calculate the
change in diode voltage that will cause a factor of 10 increase in current. 5

5. Consider a contact between Al and n Si doped at Nd=1016 cm-3. T=300 K. (a) Draw the energy-band
diagrams of the two materials before the junction is formed. (b) Draw the ideal energy band at zero
bias after the junction is formed. (c) Calculate ΦB0, xd, and Emax for part (b). 5