EE520 Assignment 3

Problem 1: In continuation of the class lecture suppose a silicon diode is symmetrically doped at
ND=NA=1015 cm-3. Answer the following questions assuming room temperature, equilibrium
conditions, and depletion approximation.

a) Compute Vbi .

b) Compute Xn ,Xp and W.

c) Compute V(x=0) and E(x=0).

d) Sketch 𝜌(𝑥) 𝑣𝑠 𝑥.

Problem 2: Sketch the distribution of hole and electron currents in the neutral regions of a PN
junction diode (forward bias) having significant recombination in the space charge layer. Assume
that:

(a) The injected hole current is twice the electron injected current.
(b) The net rate at which pairs recombine in the space charge region is equal to half the net rate
at which electron recombine in the p-type region.

Demonstrate that the total diode current is given by adding a term that describes the space
charge region recombination current to the sum of diffusion currents at the edges of the space
charge region.

Hint: Reasoning Question (Assume scale of e and hole current at edge of space charge region)

Problem 3: For p+-n junction do the exact electrostatic analysis as we have done in class and find
expressions for Vbi, W ,E(x=0) and sketch V(x) vs x, Sketch 𝜌(𝑥) 𝑣𝑠 𝑥. And E(x) vs x .

Problem 4: Do electrostatic analysis for a linearly graded diode. You can assume some idealities

Problem 5: Two p+n junctions are ideal and identical except that ND1=1015cm-3 and

ND2=1016cm-3. Compare IV characteristics of two diodes and plot on same set of axes.

Problem 6: Derive the admittance relation expressions in case of p+n diode. Here you are supposed
to take an ac signal superimposed on dc and solve for ac minority carrier diffusion equation. Then
get admittance relations involving frequency of ac. And also plot the diffusion capacitance and
diffusion conductance normalized to their low frequency values.
Problem 7:

a) Sketch energy band diagram for this problem.

b) Sketch V(x).

c) Sketch E(x).

d) Sketch 𝜌(𝑥) 𝑣𝑠 𝑥.

e) Name the charge entities responsible for 𝜌(𝑥) in d.

f) Explain why depletion approximation can’t be used in this problem.

g) Calculate Vbi for this high-low junction assuming Si at room temperature.

Problem 8: Consider N+P diode with quasi-neutral P region length WP. Answer the following
questions assuming that recombination in space charge region can be neglected.

a) Derive general expression for ID(VA) valid for P region of any length, WP.

b) Simplify the expression derived in (a) for “long diode “. What do we mean by long diode here?

c) Simplify same for short diode. What do we mean by short diode?

Problem 9: Consider the following carrier concentration plot inside a pn junction and then answer
the following.

a) Is diode forward biased or reverse biased explain your answer.

b) Do low level injection conditions prevail in quasi-neutral regions of the diode? Explain.

c) Determine the applied voltage

d) determine the hole diffusion length Lp.

Problem 10: