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    Mahadev
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    This document outlines an experiment to study and compare the parameters and characteristics of common diodes, bipolar junction transistors (BJTs), field effect transistors (FETs), metal-oxide-semiconductor field-effect transistors (MOSFETs), and integrated circuit (IC) packages. It provides tables comparing the voltage ratings, current ratings, power dissipation and applications of sample diode, BJT, FET, and MOSFET components. It also lists topics to cover on dual in-line package (DIP), quad flat package (QFP), and surface mount device (SMD) IC packages, including the types of devices, mounting methods, construction, and package types. The objectives are to familiarize students with

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    This document outlines an experiment to study and compare the parameters and characteristics of common diodes, bipolar junction transistors (BJTs), field effect transistors (FETs), metal-oxide-semiconductor field-effect transistors (MOSFETs), and integrated circuit (IC) packages. It provides tables comparing the voltage ratings, current ratings, power dissipation and applications of sample diode, BJT, FET, and MOSFET components. It also lists topics to cover on dual in-line package (DIP), quad flat package (QFP), and surface mount device (SMD) IC packages, including the types of devices, mounting methods, construction, and package types. The objectives are to familiarize students with

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    © All Rights Reserved
    Download as DOC, PDF, TXT or read online from Scribd
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    15 views5 pages

    EIT Exp 1 Component

    Uploaded by

    Mahadev
    This document outlines an experiment to study and compare the parameters and characteristics of common diodes, bipolar junction transistors (BJTs), field effect transistors (FETs), metal-oxide-semiconductor field-effect transistors (MOSFETs), and integrated circuit (IC) packages. It provides tables comparing the voltage ratings, current ratings, power dissipation and applications of sample diode, BJT, FET, and MOSFET components. It also lists topics to cover on dual in-line package (DIP), quad flat package (QFP), and surface mount device (SMD) IC packages, including the types of devices, mounting methods, construction, and package types. The objectives are to familiarize students with

    Copyright:

    © All Rights Reserved
    Download as DOC, PDF, TXT or read online from Scribd
    Flag for inappropriate content
    of 5

    PUNE INSTITUTE OF COMPUTER TECHNOLOGY, PUNE - 411043

    Department of Electronics & Telecommunication


    CLASS :

    S.E. E &TC

    SUBJECT : EIT

    EXPT. NO. : 1

    DATE :

    TITLE

    : STUDY OF COMPONENTS & INTEGRATED


    CIRCUITS

    OBJECTIVE

    : To study and compare the different parameters of


    different Diodes, BJTs, FETs, MOSFETs, & IC packages.

    APPARATUS
    THEORY

    : Datasheets of commonly used Diodes, BJTs, FETs.


    :

    SYMBOL
    DIODE

    SYMBOL
    P:F:-LTL-UG/03/R1

    CHARACTERISTICS

    CHARACTERSTICS
    4.1

    EIT

    PUNE INSTITUTE OF COMPUTER TECHNOLOGY, PUNE - 411043

    Department of Electronics & Telecommunication


    BJT

    SYMBOL
    FET

    CHARACTERSTICS

    COMPARISON TABLE:
    P:F:-LTL-UG/03/R1

    4.2

    EIT

    PUNE INSTITUTE OF COMPUTER TECHNOLOGY, PUNE - 411043

    Department of Electronics & Telecommunication


    1)

    Diodes
    Parameters

    Type No.

    VRRM

    IF

    VF

    IR

    Trr

    Ptot

    Application

    1N4001-07
    1N4148

    VRRM: Repetitive Peak Reverse Voltage.


    IF : Continuous forward current.
    IR : Reverse current.
    Trr : Reverse Recovery Time.
    Ptot : Total Power Dissipation.
    2)

    Transistors

    Parameters
    Type No.

    VCBO

    VCEO

    IC(MAX)

    PTOT

    HFE

    Application

    BC547
    BC548
    BD139
    TIP122
    P:F:-LTL-UG/03/R1

    4.3

    EIT

    PUNE INSTITUTE OF COMPUTER TECHNOLOGY, PUNE - 411043

    Department of Electronics & Telecommunication

    2N2222

    3) FET
    Parameters
    Type No.

    VDS

    ID

    VGS

    Ptot

    RDSon

    TJ

    RDSon

    TJ

    Application

    BFW10
    BFW11
    BF245A

    4) MOSFET
    Parameters
    Type No.

    VDS

    ID

    VGS

    Ptot

    Application

    IRF840

    5) IC PACKAGES:
    Write in short regarding following points for DIP,QFP and
    SMD(Attach separate sheets).
    P:F:-LTL-UG/03/R1

    4.4

    EIT

    PUNE INSTITUTE OF COMPUTER TECHNOLOGY, PUNE - 411043

    Department of Electronics & Telecommunication


    1.
    2.
    3.
    4.

    Types of devices.
    Mounting.
    Construction.
    Types.

    REFERENCES:
    1)
    2)
    3)

    Second Edition, The art of electronicsPaul Horowitz.


    WWW.allaboutcircuits.com
    RSCOMPONENT Catalogue.

    P:F:-LTL-UG/03/R1

    4.5

    EIT

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